1.3 Ω CMOS, 1.8 V to 5.5 V Single SPDT Switch/2:1 MUX in SOT-66 Package ADG859 FEATURES FUNCTIONAL BLOCK DIAGRAM 1.8 V to 5.5 V single supply Tiny 1.65 mm × 1.65 mm package Low on resistance: 1.3 Ω at 5 V supply High current-carrying capability 300 mA continuous current 500 mA peak current at 5 V Rail-to-rail operation Typical power consumption: <0.01 μW TTL/CMOS-compatible inputs ADG859 S2 D S1 SWITCHES SHOWN FOR A LOGIC 1 INPUT 05258-001 IN Figure 1. APPLICATIONS Cellular phones PDAs MP3 players Battery-powered systems Audio and video signal routing Modems PCMCIA cards Hard drives Relay replacement GENERAL DESCRIPTION PRODUCT HIGHLIGHTS The ADG859 is a monolithic, CMOS SPDT (single pole, double throw) switch that operates with a supply range of 1.8 V to 5.5 V. It is designed to offer low on resistance of 2.3 Ω maximum over the entire temperature range of −40°C to +125°C. The ADG859 also has the capability of carrying large amounts of current, typically 300 mA at 5 V operation. These features make the ADG859 an ideal solution for applications that are space-constrained, such as handsets, PDAs, and MP3 players. 1. Low on resistance: 2.3 Ω maximum over the full temperature range of −40°C to +125°C. 2. High current-carrying capability. 3. Tiny 6-lead, 1.65 mm × 1.65 mm SOT-66 package. Each switch conducts equally well in both directions when on. The device exhibits break-before-make switching action, thereby preventing momentary shorting when switching channels. The ADG859 is available in a tiny 6-lead SOT-66 package. Rev. 0 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 © 2005 Analog Devices, Inc. All rights reserved. ADG859 TABLE OF CONTENTS Specifications..................................................................................... 3 Test Circuits..................................................................................... 10 Absolute Maximum Ratings............................................................ 5 Terminology .................................................................................... 12 ESD Caution.................................................................................. 5 Outline Dimensions ....................................................................... 13 Pin Configuration and Function Descriptions............................. 6 Ordering Guide .......................................................................... 13 Typical Performance Characteristics ............................................. 7 REVISION HISTORY 6/05—Revision 0: Initial Version Rev. 0 | Page 2 of 16 ADG859 SPECIFICATIONS VDD = 5 V ± 10%, GND = 0 V, unless otherwise noted. 1 Table 1. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON On Resistance Match Between Channels, ∆RON On Resistance Flatness, RFLAT (ON) LEAKAGE CURRENTS Source Off Leakage, IS (Off) Channel On Leakage, ID, IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH 25°C −40°C to +85°C −40°C to +125°C 0 V to VDD 1.3 2.1 0.01 0.093 0.32 0.45 2.2 2.3 0.163 0.163 0.6 0.65 ±0.02 ±0.02 2 0.8 0.005 4 Break-Before-Make Time Delay, tBBM Charge Injection Off Isolation ±13 −78 ns typ ns max ns typ ns max ns typ ns min pC typ dB typ Channel-to-Channel Crosstalk −78 dB typ −3 dB Bandwidth Insertion Loss Total Harmonic Distortion (THD + N) 125 −0.11 0.062 MHz typ dB typ % 18 45 pF typ pF typ 11 12 6.5 7 1 CS (Off) CD, CS (On) POWER REQUIREMENTS IDD 2 V min V max μA typ μA max pF typ 8 10 4.5 6 4 tOFF 1 V Ω typ Ω max Ω typ Ω max Ω typ Ω max nA typ nA typ ±0.1 Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS 2 tON Unit 0.001 1 Temperature range is −40°C to +125°C. Guaranteed by design; not subject to production test. Rev. 0 | Page 3 of 16 μA typ μA max Test Conditions/Comments VDD = 4.5 V, VS = 0 V to VDD, IS = −100 mA; Figure 16 VDD = 4.5 V, VS = 4.5V, IS = −100 mA; Figure 16 VDD = 4.5 V, VS = 0 V to VDD, IS = −100 mA; Figure 16 VDD = 5.5 V VS = 4.5 V/1 V, VD = 1 V/4.5 V; Figure 17 VS = VD = 1 V or 4.5 V; Figure 18 VIN = VINL or VINH RL = 50 Ω, CL = 35 pF VS = 3 V; Figure 19 RL = 50 Ω, CL = 35 pF VS = 3 V; Figure 19 RL = 50 Ω, CL = 35 pF VS1 = VS2 = 1.5 V; Figure 20 VS = 0 V, RS = 0 Ω, CL = 1 nF; Figure 21 RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 22 RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 23 RL = 50 Ω, CL = 5 pF; Figure 24 RL = 50 Ω, CL = 5 pF; Figure 24 RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 3 V p-p; Figure 14 f = 1 MHz f = 1 MHz VDD = 5.5 V Digital inputs = 0 V or 5.5 V ADG859 VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted. 1 Table 2. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON On Resistance Match Between Channels, ∆RON ∆RON LEAKAGE CURRENTS Source Off Leakage, IS (Off) Channel On Leakage, ID, IS (On) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IIN Digital Input Capacitance, CIN DYNAMIC CHARACTERISTICS 2 tON 25°C −40°C to +85°C −40°C to +125°C 0 V to VDD 3 4.3 0.03 0.11 4.5 4.7 0.15 0.15 ±0.02 ±0.05 nA typ nA typ 2.0 0.8 0.7 0.005 ±0.1 ±0.1 16 17 10 11 4 V min V max V max μA typ μA max pF typ Break-Before-Make Time Delay, tBBM Charge Injection Off Isolation ±7 −78 ns typ ns max ns typ ns max ns typ ns min pC typ dB typ Channel-to-Channel Crosstalk −78 dB typ −3 dB Bandwidth Insertion Loss Total Harmonic Distortion (THD + N) 125 −0.11 0.1 MHz typ dB typ % 18 46 pF typ pF typ 1 CS (Off) CD, CS (On) POWER REQUIREMENTS IDD 2 V Ω typ Ω max Ω typ Ω max 11 15 6 9.5 5 tOFF 1 Unit 0.001 1 Temperature range is −40°C to +125°C. Guaranteed by design; not subject to production test. Rev. 0 | Page 4 of 16 μA typ μA max Test Conditions/Comments VDD = 2.7 V, VS = 0 V to VDD, IS = −100 mA; Figure 16 VDD = 2.7 V, VS = 1.2 V, IS = −100 mA; Figure 16 VDD = 3.6 V VS = 3 V/1 V, VD = 1 V/3 V; Figure 17 VS = VD = 1 V or 3 V; Figure 18 VDD = 3 V to 3.6 V VDD = 2.7 V VIN = VINL or VINH RL = 50 Ω, CL = 35 pF VS = 1.5 V; Figure 19 RL = 50 Ω, CL = 35 pF VS = 1.5 V; Figure 19 RL = 50 Ω, CL = 35 pF VS1 = VS2 = 1.5 V; Figure 20 VS = 0 V, RS = 0 Ω, CL = 1 nF; Figure 21 RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 22 S1 to S2; RL = 50 Ω, CL = 5 pF, f = 100 kHz; Figure 23 RL = 50 Ω, CL = 5 pF; Figure 24 RL = 50 Ω, CL = 5 pF; Figure 24 RL = 32 Ω, f = 20 Hz to 20 kHz, VS = 2 V p-p; Figure 14 f = 1 MHz f = 1 MHz VDD = 3.6 V Digital inputs = 0 V or 3.6 V ADG859 ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted. Table 3. Parameter VDD to GND Analog Inputs 1 Digital Inputs1 Peak Current, S or D 5 V Operation 3 V Operation Continuous Current, S or D 5 V Operation 3 V Operation Operating Temperature Range Automotive Storage Temperature Range Junction Temperature SOT-66 Package (4-Layer Board) θJA Thermal Impedance Lead-Free Reflow Peak Temperature Time at Peak Temperature 1 Rating −0.3 V to +7.0 V −0.3 V to VDD + 0.3 V or 30 mA, whichever occurs first −0.3 V to VDD + 0.3 V or 30 mA, whichever occurs first 500 mA 460 mA Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. Table 4. Truth Table 300 mA 275 mA Logic (IN) 0 1 −40°C to +85°C −65°C to +150°C 150°C Switch 2 (S2) Off On 191°C/W 260(+0/−5)°C 10 sec to 40 sec Overvoltages at S or D are clamped by internal diodes. Current should be limited to the maximum ratings given. ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. 0 | Page 5 of 16 Switch 1 (S1) On Off ADG859 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS IN 1 6 S2 ADG859 5 D TOP VIEW GND 3 (Not to Scale) 4 S1 05258-002 VDD 2 Figure 2. 6-Lead SOT-66 Pin Configuration Table 5. Pin Function Descriptions Pin No. 1 2 3 4 5 6 Mnemonic IN VDD GND S1 D S2 Description Logic Control Input. Most Positive Power Supply Potential. Ground (0 V) Reference. Source Terminal. Can be an input or an output. Drain Terminal. Can be an input or an output. Source Terminal. Can be an input or an output. Rev. 0 | Page 6 of 16 ADG859 TYPICAL PERFORMANCE CHARACTERISTICS 2.0 3.0 TA = 25°C IDS = 100mA 1.8 +125°C VDD = 4.5V 1.6 2.5 ON RESISTANCE (Ω) 1.2 RON (Ω) +85°C VDD = 5V 1.4 1.0 0.8 VDD = 5.5V 0.6 2.0 +25°C 1.5 –40°C 1.0 0.4 0 1 2 3 4 0 5 0 0.5 1.0 VS/VD (V) 1.5 2.0 2.5 3.0 SOURCE VOLTAGE (V) Figure 3. On Resistance vs. VS (VD); VDD = 5 V ± 10% Figure 6. On Resistance vs. Source Voltage for Different Temperatures, VDD = 3 V 3.0 5 TA = 25°C IDS = 100mA VDD = 2.7V VDD = 5V 2.5 4 VDD = 3V 1.5 LEAKAGE (nA) 2.0 VDD = 3.3V VDD = 3.6V 1.0 ID, IS (ON) 3 2 1 IS (OFF) 0 05258-024 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 –1 –40 3.5 05258-016 RON (Ω) 05258-013 0 VDD = 3V IDS = 100mA 0.5 05258-012 0.2 –20 0 VS/VD (V) 20 40 60 80 100 120 TEMPERATURE (°C) Figure 4. On Resistance vs. VS (VD); VDD = 2.7 V to 3.6 V Figure 7. Leakage vs. Temperature, VDD = 5 V 4.5 1.8 VDD = 3V 1.6 +85°C 1.4 3.5 ID, IS (ON) 3.0 1.2 LEAKAGE (nA) 1.0 0.8 +25°C –40°C 0.6 2.5 2.0 1.5 1.0 0.4 0.2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 05258-014 0.5 VDD = 5V IDS = 100mA 0 –0.5 –40 5.0 IS (OFF) –20 0 20 40 60 80 100 TEMPERATURE (°C) SOURCE VOLTAGE (V) Figure 5. On Resistance vs. Source Voltage for Different Temperatures, VDD = 5 V Rev. 0 | Page 7 of 16 Figure 8. Leakage vs. Temperature, VDD = 3 V 120 05258-015 ON RESISTANCE (Ω) 4.0 +125°C ADG859 30 0 TA = 25°C TA = 25°C VDD = 3V/5V –20 ATTENUATION (dB) 20 VDD = 5V 15 VDD = 3V 10 5 –40 –60 –80 05258-017 –100 0 0.5 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 –120 100 5.0 05258-020 CHARGE INJECTION (pC) 25 1k 10k VD (V) 14 10M 100M 10M 100M 0 TA = 25°C VDD = 3V/5V 12 –20 ATTENUATION (dB) VDD = 3.3V 10 tON 8 VDD = 5V 6 VDD = 3.3V tOFF 4 –40 –60 –80 VDD = 5V –100 0 –40 05258-018 2 –20 0 20 40 60 –120 100 80 05258-021 TIME (ns) 1M Figure 12. Off Isolation vs. Frequency Figure 9. Charge Injection vs. Source Voltage 1k 10k TEMPERATURE (°C) 100k 1M FREQUENCY (Hz) Figure 10. tON/tOFF Times vs. Temperature Figure 13. Crosstalk vs. Frequency 0.20 0 TA = 25°C 0.18 –2 0.16 TA = 25°C VDD = 3V/5V 0.14 THD + N (%) –4 –6 –8 0.12 VDD = 3V, VS = 2V p-p 0.10 0.08 0.06 VDD = 5V, VS = 3V p-p 0.04 –12 100 1k 10k 100k 1M 10M 100M 05258-022 –10 05258-019 ON RESPONSE (dB) 100k FREQUENCY (Hz) 0.02 0 0 1G 5k 10k 15k FREQUENCY (Hz) FREQUENCY (Hz) Figure 14. Total Harmonic Distortion + Noise Figure 11. Bandwidth Rev. 0 | Page 8 of 16 20k ADG859 0 –20 TA = 25°C VDD = 3V/5V NO SUPPLY DECOUPLING –60 –80 –100 –120 100 05258-023 PSRR (dB) –40 1k 10k 100k 1M 10M 100M FREQUENCY (Hz) Figure 15. PSRR Rev. 0 | Page 9 of 16 ADG859 TEST CIRCUITS V IS (OFF) D D A 05258-003 VS VD S NC Figure 18. On Leakage VDD 0.1μF VIN 50% 50% VIN 50% 50% VDD VOUT D RL 50Ω IN VIN CL 35pF 90% 90% VOUT GND tON tOFF 05258-006 S2 S1 VS Figure 19. Switching Times, tON, tOFF VDD 0.1μF VIN VDD S2 S1 VS VOUT D 80% RL 50Ω IN VOUT CL 35pF tBBM VIN tBBM 05258-007 GND Figure 20. Break-Before-Make Time Delay, tBBM VDD 0.1μF VIN (NORMALLY CLOSED SWITCH) VDD S2 S1 VOUT OFF VIN (NORMALLY OPEN SWITCH) CL 1nF IN VIN NC D ON GND VOUT ΔVOUT QINJ = CL × ΔVOUT Figure 21. Charge Injection Rev. 0 | Page 10 of 16 05258-008 VS A VD Figure 17. Off Leakage Figure 16. On Resistance D 05258-005 ID (ON) IDS VS 05258-004 S ID (OFF) S A ADG859 VDD 0.1μF VDD S1 IN NETWORK ANALYZER NC S2 50Ω 50Ω VS D RL 50Ω VOUT 05258-009 VIN GND VOUT OFF ISOLATION = 20 LOG VS Figure 22. Off Isolation VDD 0.1μF NETWORK ANALYZER VDD S1 VOUT RL 50Ω D S2 R 50Ω 50Ω IN VS CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG 05258-010 GND VOUT VS Figure 23. Channel-to-Channel Crosstalk VDD 0.1μF VDD IN S1 NETWORK ANALYZER NC 50Ω S2 VS D RL 50Ω VOUT GND INSERTION LOSS = 20 LOG VOUT WITH SWITCH VOUT WITHOUT SWITCH Figure 24. Bandwidth Rev. 0 | Page 11 of 16 05258-011 VIN ADG859 TERMINOLOGY VDD Most positive power supply potential. CS (Off) Off switch source capacitance. Measured with reference to ground. IDD Positive supply current. CD (Off) Off switch drain capacitance. Measured with reference to ground. GND Ground (0 V) reference. CD, CS (On) On switch capacitance. Measured with reference to ground. S Source terminal. Can be an input or an output. CIN Digital input capacitance. D Drain terminal. Can be an input or an output. tON Delay time between the 50% and 90% points of the digital input and switch on condition. IN Logic control input. VD (VS) Analog voltage on the D and S terminals. tOFF Delay time between the 50% and 90% points of the digital input and switch off condition. RON Ohmic resistance between the D and S terminals. RFLAT (ON) Flatness is defined as the difference between the maximum and minimum value of on resistance as measured. tBBM On or off time measured between the 80% points of both switches when switching from one to another. ΔRON On resistance mismatch between any two channels. Charge Injection A measure of the glitch impulse transferred from the digital input to the analog output during on/off switching. IS (Off) Source leakage current with the switch off. Off Isolation A measure of unwanted signal coupling through an off switch. ID (Off) Drain leakage current with the switch off. Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. ID, IS (On) Channel leakage current with the switch on. VINL Maximum input voltage for Logic 0. VINH Minimum input voltage for Logic 1. IINL (IINH) Input current of the digital input. −3 dB Bandwidth The frequency at which the output is attenuated by 3 dB. On Response The frequency response of the on switch. Insertion Loss The loss due to the on resistance of the switch. THD + N The ratio of harmonic amplitudes plus noise of a signal to the fundamental. Rev. 0 | Page 12 of 16 ADG859 OUTLINE DIMENSIONS 1.70 1.66 1.50 6 1.30 1.20 1.10 5 0.20 MIN 0.26 0.19 0.11 4 TOP VIEW 1.70 1.65 1.50 BOTTOM VIEW 1 2 3 0.10 NOM 0.05 MIN PIN 1 12° MAX 0.60 0.57 0.53 0.18 0.17 0.13 0.34 MAX 0.27 NOM 0.50 BSC 0.30 0.23 0.10 0.25 MAX 0.17 MIN SEATING PLANE Figure 25. 6-Lead Small Outline Transistor Package [SOT-66] (RY-6-1) Dimensions shown in millimeters ORDERING GUIDE Model ADG859YRYZ-REEL2 ADG859YRYZ-REEL7 2 ADG859BRYZ-REEL2 ADG859BRYZ-REEL72 1 2 Temperature Range −40°C to +125°C −40°C to +125°C −40°C to +85°C −40°C to +85°C Package Description 6-Lead Small Outline Transistor Package (SOT-66) 6-Lead Small Outline Transistor Package (SOT-66) 6-Lead Small Outline Transistor Package (SOT-66) 6-Lead Small Outline Transistor Package (SOT-66) Branding on this package is limited to two characters due to space constraints. Z = Pb-free part. Rev. 0 | Page 13 of 16 Package Option RY-6-1 RY-6-1 RY-6-1 RY-6-1 Branding 1 02 02 04 04 ADG859 NOTES Rev. 0 | Page 14 of 16 ADG859 NOTES Rev. 0 | Page 15 of 16 ADG859 NOTES © 2005 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D05258–0–6/05(0) Rev. 0 | Page 16 of 16