HGTG40N60B3 S E M I C O N D U C T O R PRELIMINARY 70A, 600V, UFS Series N-Channel IGBT May 1995 Features Package o • 70A, 600V at TC = +25 C JEDEC STYLE TO-247 • Square Switching SOA Capability E • Typical Fall Time - 160ns at +150oC C G • Short Circuit Rating • Low Conduction Loss Description The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. Terminal Diagram N-CHANNEL ENHANCEMENT MODE The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. C G PACKAGING AVAILABILITY PART NUMBER HGTG40N60B3 PACKAGE TO-247 E BRAND G40N60B3 NOTE: When ordering, use the entire part number. Formerly Developmental Type TA49052 Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage, RGE = 1MΩ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous At TC = +25oC (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = +110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TC = +150oC. . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC HGTG40N60B3 600 600 UNITS V V 70 40 330 ±20 ±30 160A at 0.8 BVCES 290 2.33 -40 to +150 260 2 10 A A A V V W W/oC oC oC µs µs NOTE: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TC = +125oC, RGE = 25Ω. CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1995 9-3 File Number 3943 Specifications HGTG40N60B3 Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS SYMBOL Collector-Emitter Breakdown Voltage BVCES Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage ICES VCE(SAT) Gate-Emitter Threshold Voltage Gate-Emitter Leakage Current Latching Current Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time tD(OFF)I UNITS 600 - - V - 250 A VCE = BVCES TJ = +150oC - - 7.5 mA ICE = 40A VGE = 15V TJ = +25oC - 1.4 2.0 V TJ = +150oC - 1.5 2.3 V TJ = +25oC 3.0 5 6.0 V - - ±300 nA 160 - - A ICE = 40A, VCE = 0.5 BVCES - 8.0 - V ICE = 40A, VCE = 0.5 BVCES VGE = 15V - 240 320 nC VGE = 20V - 350 450 nC - 50 - ns - 40 - ns - 350 435 ns TJ = +150oC VCE(PK) = 0.8 BVCES VGE = 15V RG = 3Ω L = 45µH tRI MAX - VGE = ±20V tD(ON)I TYP TJ = +25oC IGES QG(ON) MIN VCE = BVCES ICE = 250A, VCE = VGE VGEP On-State Gate Charge ICE = 250µA, VGE = 0V VGE(TH) IL Gate-Emitter Plateau Voltage TEST CONDITIONS TJ = +150oC ICE = 40A VCE(PK) = 0.8 BVCES VGE = 15V RG = 3Ω L = 100µH Current Fall Time tFI - 160 200 ns Turn-On Energy EON - 1400 - J Turn-Off Energy (Note 1) EOFF - 3300 - J Thermal Resistance RθJC - - 0.43 oC/W NOTE: 1. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTG40N60B3 was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 9-4 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 HGTG40N60B3 PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VCE = 10V 200 ICE, COLLECTOR-EMITTER CURRENT (A) 180 160 140 o TC = +150 C 120 100 TC = 80 60 +25oC TC = -40oC 40 20 PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = +25oC 200 180 0 120 9V 100 80 2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) 8.0V 40 7.5V 20 7.0V 0 12 DIE LIMIT VGE = 15V 70 PACKAGE LIMIT 50 40 30 20 10 0 25 50 75 100 125 TC , CASE TEMPERATURE 2 2.5 3 3.5 4 4.5 5 CISS 8 6 4 COSS 2 CRSS 15 20 25 100 TC = +150oC 50 0 1 2 3 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IG(REF) = 4.06mA, RL = 7.5Ω, TC = +25oC 600 450 BVCE = 400V 5 150 BVCE = 200V 0 50 100 150 200 FIGURE 6. GATE CHARGE WAVEFORMS 9-5 20 10 300 QG , GATE CHARGE (nC) FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE 4 15 BVCE = 600V 0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) TC = +25oC FIGURE 4. COLLECTOR-EMITTER ON-STATE VOLTAGE VCE , COLLECTOR - EMITTER VOLTAGE (V) 12 10 TC = -40oC 0 14 5 150 (oC) FREQUENCY = 1MHz 10 200 150 FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE 0 1.5 PULSE DURATION = 250µs, DUTY CYCLE <0.5%, VGE = 15V 80 60 1 FIGURE 2. SATURATION CHARACTERISTICS ICE, COLLECTOR-EMITTER CURRENT (A) 90 0.5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 100 ICE, DC COLLECTOR CURRENT (A) 8.5V 60 FIGURE 1. TRANSFER CHARACTERISTICS C, CAPACITANCE (nF) 9.5V 140 0 0 0 10V 12V VGE = 15V 160 0 250 VGE, GATE-EMITTER VOLTAGE (V) ICE, COLLECTOR-EMITTER CURRENT (A) Typical Performance Curves HGTG40N60B3 Typical Performance Curves TJ = +150oC, RG = 3Ω, L = 100µH 70 50 30 20 10 10 20 30 40 50 60 70 80 90 TJ = +150oC, RG = 3Ω, L = 100µH 400 tD(OFF)I , TURN-OFF DELAY TIME (ns) 100 tD(ON)I , TURN-ON DELAY TIME (ns) (Continued) 350 300 VCE(PK) = 480V, VGE = 15V 250 200 10 100 20 ICE , COLLECTOR-EMITTER CURRENT (A) FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 500 tFI , FALL TIME (ns) tRI , TURN-ON RISE TIME (ns) TJ = +150oC, RG = 3Ω, L = 100µH 1000 70 50 VCE(PK) = 480V, VGE = 15V 30 20 300 200 100 VCE(PK) = 480V, VGE = 15V 50 30 20 10 10 10 20 30 40 50 60 70 80 90 100 20 ICE , COLLECTOR-EMITTER CURRENT (A) FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 40 60 80 ICE , COLLECTOR-EMITTER CURRENT (A) 100 FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT TJ = +150oC, RG = 3Ω, L = 100µH TJ = +150oC, RG = 3Ω, L = 100µH 10 EOFF , TURN-OFF ENERGY LOSS (mJ) 6 EON , TURN-ON ENERGY LOSS (mJ) 100 FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT TJ = +150oC, RG = 3Ω, L = 100µH 100 30 40 50 60 70 80 90 ICE , COLLECTOR-EMITTER CURRENT (A) 5 4 VCE(PK) = 480V, VGE = 15V 3 2 1 8 VCE(PK) = 480V, VGE = 15V 6 4 2 0 10 20 30 40 50 60 70 80 90 10 100 20 30 40 50 60 70 80 90 100 ICE, COLLECTOR-EMITTER CURRENT (A) ICE , COLLECTOR-EMITTER CURRENT (A) FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 9-6 HGTG40N60B3 Typical Performance Curves ICE, COLLECTOR-EMITTER CURRENT (A) TJ = +150oC, TC = +75oC, VGE = +15V, RG = 3Ω, L = 100µH 200 fMAX , OPERATING FREQUENCY (kHz) (Continued) 100 50 20 10 fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) 5 PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RθJC = 0.43oC/W 2 1 10 20 30 50 70 TC = +150oC, VGE = 15V, RG = 3Ω, L = 45µH 200 160 120 80 40 0 0 100 100 FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 300 400 500 600 FIGURE 14. SWITCHING SAFE OPERATING AREA 100 0.5 RESPONSE (oC/W) ZθJC , NORMALIZED THERMAL 200 VCE, COLLECTOR-EMITTER VOLTAGE (V) ICE, COLLECTOR-EMITTER CURRENT (A) 0.2 10-1 0.1 PD 0.05 t1 t2 NOTES: DUTY FACTOR, D = t1 /t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.02 0.01 10-2 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1 100 101 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE Test Circuit and Waveforms 90% L = 100µH 10% VGE RHRP3060 EOFF EON VCE RG = 3Ω 90% + - ICE VDD = 480V FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT 10% tD(OFF)I tFI tRI tD(ON)I FIGURE 17. SWITCHING TEST WAVEFORMS 9-7 HGTG40N60B3 Operating Frequency Information Handling Precautions for IGBT’s Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBT’s are currently being extensively used in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBT’s can be handled safely if the following basic precautions are taken: fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 17. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as †”ECCOSORBD LD26” or equivalent. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX . tD(OFF)I is important when controlling output ripple under a lightly loaded condition. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX - TC)/RθJC. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. EON and EOFF are defined in the switching waveforms shown in Figure 17. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turnoff. All tail losses are included in the calculation of EOFF; i.e.the collector current equals zero (ICE = 0). 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. † Trademark Emerson and Cumming, Inc. 9-8