FGA25N120AN General Description Features Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). • High speed switching • Low saturation voltage : VCE(sat) = 2.5 V @ IC = 25A • High input impedance Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. C G E TO-3P G C E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25°C @ TC = 100°C @ TC = 25°C @ TC = 100°C FGA25N120AN 1200 ± 20 40 25 75 310 125 -55 to +150 -55 to +150 Units V V A A A W W °C °C 300 °C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ©2004 Fairchild Semiconductor Corporation Typ. --- Max. 0.4 40 Units °C/W °C/W FGA25N120AN Rev. A FGA25N120AN IGBT C Symbol Parameter = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units VGE = 0V, IC = 3mA 1200 -- -- V VGE = 0V, IC = 3mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 3 ± 100 mA nA 3.5 -- 5.5 2.5 7.5 3.2 V V -- 2.9 -- V -- 3.1 -- V ---- 2100 180 90 ---- pF pF pF ------------------- 60 60 170 45 4.8 1.0 5.7 60 60 180 70 5.5 1.4 6.9 200 15 105 14 ---90 7.2 1.5 8.7 -------300 23 160 -- ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC nH Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current On Characteristics VGE(th) G-E Threshold Voltage VCE(sat) Collector to Emitter Saturation Voltage IC = 25mA, VCE = VGE IC = 25A, VGE = 15V IC = 25A, VGE = 15V, TC = 125°C IC = 40A, VGE = 15V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ©2004 Fairchild Semiconductor Corporation VCC = 600 V, IC = 25A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 600 V, IC = 25A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C VCE = 600 V, IC = 25A, VGE = 15V Measured 5mm from PKG FGA25N120AN Rev. A FGA25N120AN Electrical Characteristics of the IGBT T TC = 25℃ 20V 17V 15V 160 12V Common Emitter VGE = 15V TC = 25℃ TC = 125℃ 100 Collector Current, IC [A] 140 Collector Current, IC [A] FGA25N120AN 120 180 120 100 VGE = 10V 80 60 40 80 60 40 20 20 0 0 0 2 4 6 8 0 10 2 Fig 1. Typical Output Characteristics 50 Common Emitter VGE = 15V Vcc = 600V load Current : peak of square wave 40A 40 3.5 3.0 Load Current [A] Collector-Emitter Voltage, VCE [V] 6 Fig 2. Typical Saturation Voltage Characteristics 4.0 IC = 25A 30 20 2.5 10 Duty cycle : 50% Tc = 100℃ Powe Dissipation = 60W 2.0 0 25 50 75 100 125 0.1 1 10 Case Temperature, T C [℃] 100 1000 Frequency [kHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 Common Emitter TC = 125℃ Collector-Emitter Voltage, VCE [V] Common Emitter TC = 25℃ Collector-Emitter Voltage, VCE [V] 4 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 16 12 8 40A 4 25A 16 12 8 40A 4 25A IC = 12.5A IC = 12.5A 0 0 0 4 8 12 16 20 0 4 8 12 Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE ©2004 Fairchild Semiconductor Corporation 16 20 FGA25N120AN Rev. A FGA25N120AN 4000 Common Emitter V GE = 0V, f = 1MHz T C = 25℃ 3500 100 Switching Time [ns] Capacitance [pF] 3000 Ciss 2500 2000 1500 Coss 1000 tr td(on) Common Emitter VCC = 600V, VGE = ± 15V IC = 25A TC = 25℃ TC = 125℃ Crss 500 10 0 1 0 10 10 20 Common Emitter VCC = 600V, VGE = ± 15V IC = 25A TC = 25℃ TC = 125℃ 50 60 Common Emitter V CC = 600V, VGE = ± 15V IC = 25A T C = 25℃ T C = 125℃ td(off) 10 Switching Loss [mJ] Switching Time [ns] 40 70 Fig 8. Turn-On Characteristics vs. Gate Resistance Fig 7. Capacitance Characteristics 1000 30 Gate Resistance, RG [Ω] Collector-Emitter Voltage, VCE [V] 100 tf Eon Eoff 1 10 0 10 20 30 40 50 60 70 0 10 20 Gate Resistance, RG [Ω] Fig 9. Turn-Off Characteristics vs. Gate Resistance Switching Time [ns] Switching Time [ns] 100 td(on) 30 40 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2004 Fairchild Semiconductor Corporation 50 60 Common Emitter VGE = ± 15V, RG = 10Ω TC = 25℃ TC = 125℃ tr 20 40 70 Fig 10. Switching Loss vs. Gate Resistance Common Emitter VGE = ± 15V, RG = 10Ω TC = 25℃ TC = 125℃ 10 30 Gate Resistance, R G [Ω] 50 td(off) 100 tf 10 20 30 40 50 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current FGA25N120AN Rev. A FGA25N120AN 16 Common Emitter VGE = ± 15V, RG = 10 Ω TC = 25℃ TC = 125℃ Gate-Emitter Voltage, VGE [V] Switching Loss [mJ] 10 Common Emitter RL = 24Ω TC = 25℃ 14 Eon Eoff 1 0.1 12 600V 10 400V 8 Vcc = 200V 6 4 2 0 10 20 30 40 50 0 20 Collector Current, IC [A] 40 60 80 100 120 140 160 180 200 Gate Charge, Q g [nC] Fig 14. Gate Charge Characteristics Fig 13. Switching Loss vs. Collector Current 100 Ic MAX (Pulsed) 100 50µs 100 µs Collector Current, IC [A] Collector Current, Ic [A] Ic MAX (Continuous) 10 1ms DC Operation 1 Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 0.1 0.01 10 Safe Operating Area VGE = 15V, TC = 125℃ 1 0.1 1 10 100 1000 1 10 Collector - Emitter Voltage, V CE [V] 100 1000 Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Thermal Response [Zthjc] 10 1 0.5 0.1 0.2 0.1 0.05 0.01 Pdm Pdm 0.02 t1 t1 t2 t2 0.01 single pulse 1E-3 1E-5 1E-4 Duty Dutyfactor factorD D==t1 t1// t2 t2 Peak PeakTj Tj==Pdm Pdm××Zthjc Zthjc++TTCC 1E-3 0.01 0.1 1 10 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT ©2004 Fairchild Semiconductor Corporation FGA25N120AN Rev. A FGA25N120AN Package Dimension TO-3P (FS PKG CODE) 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation FGA25N120AN Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST® FASTr™ Bottomless™ FRFET™ CoolFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ EnSigna™ ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I6