ETC P2503NVG

NIKO-SEM
P2503NVG
N- & P-Channel Enhancement Mode
Field Effect Transistor
SOP-8
Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
N-Channel
30
25mΩ
7A
P-Channel
-30
45mΩ
-5A
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
N-Channel P-Channel
UNITS
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
±20
±20
V
7
-5
6
-4
20
-20
TC = 25 °C
Continuous Drain Current
Pulsed Drain Current
ID
TC = 70 °C
1
IDM
TC = 25 °C
Power Dissipation
2
PD
TC = 70 °C
Junction & Storage Temperature Range
Tj, Tstg
A
W
1.3
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Ambient
TYPICAL
RθJA
MAXIMUM
UNITS
62.5
°C / W
1
Pulse width limited by maximum junction temperature.
Duty cycle ≤ 1%
2
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
UNIT
TYP MAX
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V(BR)DSS
VGS(th)
VGS = 0V, ID = 250µA
N-Ch
30
VGS = 0V, ID = -250µA
P-Ch
-30
VDS = VGS, ID = 250µA
N-Ch
1
1.5
2.5
P-Ch
-1
-1.5
-2.5
VDS = VGS, ID = -250µA
1
V
May-12-2004
NIKO-SEM
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
N-Ch
±100
VDS = 0V, VGS = ±20V
P-Ch
±100
VDS = 24V, VGS = 0V
N-Ch
1
P-Ch
-1
VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch
10
P-Ch
-10
VDS = -20V, VGS = 0V, TJ = 55 °C
On-State Drain Current1
ID(ON)
VDS = 5V, VGS = 10V
VDS =-5V, VGS = -10V
VGS = 4.5V, ID = 6A
On-State
VGS = -4.5V, ID = -4A
RDS(ON)
gfs
N-Ch
20
P-Ch
-20
N-Ch
25
37
P-Ch
58
80
25
P-Ch
34
45
N-Ch
19
P-Ch
11
N-Ch
790
N-Channel
P-Ch
690
VGS = 0V, VDS = 10V, f = 1MHz
N-Ch
175
P-Channel
P-Ch
310
VGS = 0V, VDS = -10V, f = 1MHz N-Ch
65
P-Ch
75
N-Channel
VDS = 0.5V(BR)DSS, VGS = 10V,
N-Ch
16
P-Ch
14
ID = 7A
N-Ch
2.5
P-Channel
P-Ch
2.2
VDS = 0.5V(BR)DSS, VGS = -10V,
N-Ch
2.1
ID = -5A
P-Ch
1.9
VDS = -5V, ID = -5A
µA
mΩ
18
VDS = 5V, ID = 7A
nA
A
N-Ch
VGS = 10V, ID = 7A
VGS = -10V, ID = -5A
Forward Transconductance1
SOP-8
Lead-Free
VDS = 0V, VGS = ±20V
IGSS
VDS = -24V, VGS = 0V
Drain-Source
Resistance1
P2503NVG
N- & P-Channel Enhancement Mode
Field Effect Transistor
S
DYNAMIC
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge2
Qg
Gate-Source Charge2
Qgs
Gate-Drain Charge2
Qgd
2
pF
nC
May-12-2004
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
Turn-On Delay Time2
Rise Time2
tr
Turn-Off Delay Time2
N-Channel
td(on)
N-Ch
2.2
4.4
P-Ch
6.7
13.4
N-Ch
7.5
15
ID ≅ 1A, VGS = 10V, RGEN = 6Ω
P-Ch
9.7
19.4
N-Ch
11.8
21.3
P-Ch
19.8
35.6
N-Ch
3.7
7.4
ID ≅ -1A, VGS = -10V, RGEN = 6Ω P-Ch
12.3
22.2
P-Channel
td(off)
tf
SOP-8
Lead-Free
VDD = 10V
VDD = -10V
Fall Time2
P2503NVG
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
3
IS
Pulsed Current
ISM
Forward Voltage1
VSD
IF = 1A, VGS = 0V
IF = -1A, VGS = 0V
N-Ch
1.3
P-Ch
-1.3
N-Ch
2.6
P-Ch
-2.6
N-Ch
1
P-Ch
-1
A
V
1
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.
2
REMARK: THE PRODUCT MARKED WITH “P2503NVG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
3
May-12-2004
NIKO-SEM
P2503NVG
N- & P-Channel Enhancement Mode
Field Effect Transistor
SOP-8
Lead-Free
N-CHANNEL
Body Diode Forward Voltage Variation with Source Current and Temperature
100
Is - Reverse Drain Current(A)
V GS = 0V
T A = 125° C
10
25° C
1
-55° C
0.1
0.01
0.001
4
0
0.2
0.4
0.6
0.8
1.0
VSD - Body Diode Forward Voltage(V)
1.2
1.4
May-12-2004
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
5
P2503NVG
SOP-8
Lead-Free
May-12-2004
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2503NVG
SOP-8
Lead-Free
P-CHANNEL
-Is - Reverse Drain Current(A)
100
V GS = 0V
10
1
0.1
T A = 125° C
25° C -55° C
0.01
0.001
0
6
0.8
1.0
1.2
0.2
0.6
0.4
-VSD - Body Diode Forward Voltage(V)
1.4
May-12-2004
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
7
P2503NVG
SOP-8
Lead-Free
May-12-2004
NIKO-SEM
P2503NVG
N- & P-Channel Enhancement Mode
Field Effect Transistor
SOP-8
Lead-Free
SOIC-8(D) MECHANICAL DATA
Dimension
mm
Min.
Typ.
Max.
A
4.8
4.9
5.0
B
3.8
3.9
C
5.8
D
0.38
Dimension
Min.
Typ.
Max.
H
0.5
0.715
0.83
4.0
I
0.18
0.254
0.25
6.0
6.2
J
0.445
0.51
K
1.27
E
mm
0.22
0°
4°
8°
L
F
1.35
1.55
1.75
M
G
0.1
0.175
0.25
N
J
F
D
E
I
G
B
H
K
C
A
8
May-12-2004