Si4300DY Vishay Siliconix N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.033 @ VGS = 4.5 V 7 FEATURES D TrenchFETr Power MOSFET D LITTLE FOOT Plust Integrated Schottky D PWM Optimized APPLICATIONS SCHOTTKY PRODUCT SUMMARY D Low Power Sychronous Rectification VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.5 V @ 1 A 2.0 SO-8 D S/A 1 8 D/K S/A 2 7 D/K S/A 3 6 D/K G 4 5 D/K K Schottky Diode G N-Channel MOSFET Top View Ordering Information: Si4300DY Si4300DY-T1 (with Tape and Reel) A S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage (MOSFET) VDS 30 Reverse Voltage (Schottky) VDA 30 Gate-Source Voltage TA = 25_C TA = 70_C Pulsed Drain Current (MOSFET) Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a 9 ID 6.4 7 5.1 IDM Continuous Source Current (MOSFET Diode Conduction)a 40 IS 2.3 IF 2.3 1.25 20 TA = 25_C TA = 25_C PD TA = 70_C Operating Junction and Storage Temperature Range A 1.25 IFM TA = 70_C V "20 VGS Continuous Drain Current (TJ = 150 150_C) C) (MOSFET)a Unit 2.5 1.38 1.6 0.88 2.2 1.25 1.4 W 0.80 TJ, Tstg _C - 55 to 150 THERMAL RESISTANCE RATINGS MOSFET Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady-State Steady-State RthJA RthJF Schottky Typ Max Typ Max 40 50 45 55 70 90 78 100 18 23 25 30 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71772 S-03951—Rev. B, 26-May-03 www.vishay.com 2-1 Si4300DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Symbol Test Condition Min 0.8 Typa Max Unit "100 nA Static VGS(th) VDS = VGS, ID = 250 mA Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Gate Threshold Voltage Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb Schottky Diode Forward Voltageb rDS(on) DS( ) V VDS = 24 V, VGS = 0 V 100 VDS = 24 V, VGS = 0 V, TJ = 85_C 2000 VDS w 5 V, VGS = 10 V 30 mA A VGS = 10 V, ID = 9 A 0.0155 0.0185 VGS = 4.5 V, ID = 7 A 0.0275 0.033 gfs VDS = 15 V, ID = 9 A 16 VSD IS = 1.0 A, VGS = 0 V 0.47 0.5 8.7 13 VDS = 15 V,, VGS = 5 V,, ID = 9 A 2.25 W S V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Rg 0.5 2.7 td(on) tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 4.2 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W IF = 2.3 A, di/dt = 100 A/ms 11 16 8 15 22 30 9 15 32 60 W ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Maximum Reverse Leakage g Current Junction Capacitance www.vishay.com 2-2 Symbol VF Irm CT Test Condition Typ Max IF = 1.0 A Min 0.47 0.5 IF = 1.0 A, TJ = 125_C 0.36 0.42 Vr = 24 V 0.004 0.100 Vr = 24 V, TJ = 100_C 0.7 10 Vr = - 24 V, TJ = 125_C 3.0 20 Vr = 10 V 50 Unit V mA pF Document Number: 71772 S-03951—Rev. B, 26-May-03 Si4300DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Output Characteristics Transfer Characteristics 40 40 VGS = 10 thru 5 V 32 32 I D - Drain Current (A) I D - Drain Current (A) 4V 24 16 3V 8 24 16 TC = 125_C 8 25_C - 55_C 0 0 0 2 4 6 8 10 0 1 VDS - Drain-to-Source Voltage (V) 2 4 5 VGS - Gate-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 1200 0.15 1000 0.12 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 3 0.09 0.06 VGS = 4.5 V 0.03 VGS = 10 V Ciss 800 600 Coss 400 200 Crss 0.00 0 0 8 16 24 32 40 0 5 ID - Drain Current (A) 15 20 25 30 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.8 VDS = 15 V ID = 9 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 10 8 6 4 1.6 VGS = 10 V ID = 9 A 1.4 1.2 1.0 0.8 2 0.6 0 0 3 6 9 Qg - Total Gate Charge (nC) Document Number: 71772 S-03951—Rev. B, 26-May-03 12 15 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 2-3 Si4300DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 50 TJ = 150_C 10 TJ = 25_C 1 0.0 0.16 ID = 9 A 0.12 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 VSD - Source-to-Drain Voltage (V) 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.6 30 0.4 ID = 250 mA 25 Power (W) V GS(th) Variance (V) 0.2 - 0.0 - 0.2 - 0.4 20 15 10 - 0.6 5 - 0.8 - 1.0 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 TJ - Temperature (_C) 10 1 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = 0.02 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 t1 t2 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 71772 S-03951—Rev. B, 26-May-03 Si4300DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 20 Forward Voltage Drop 10 10 TJ = 150_C I F - Forward Current (A) I R - Reverse Current (mA) SCHOTTKY 1 30 V 0.1 24 V 0.01 TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 TJ - Temperature (_C) 1 0.0 0.3 0.6 0.9 1.2 1.5 VF - Forward Voltage Drop (V) Capacitance 200 C - Capacitance (pF) 160 120 80 Coss 40 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Document Number: 71772 S-03951—Rev. B, 26-May-03 www.vishay.com 2-5