TFDU2201 Vishay Semiconductors Low Profile Transceiver Module PIN Photodiode and Infrared Emitter Description The miniaturized TFDU2201 is an ideal PIN photodiode transmitter combination in a unique package for applications in telecommunications like mobile phones and pagers. The device is mechanically designed for lowest profile with a height of only 2.8 mm. The device is designed to be compatible to the IrDA standard when using an external receiver IC and IRED driver. 18170 Features • Package dimension: L 7.3 mm x W 4.55 mm x H 2.75 mm • SMD side view • Fast PIN Photodiode for SIR and FIR applications • Detector with high efficiency and high speed at low bias voltage • Only 30 mA IRED peak current during transmission for IrDA SIR low power standard • Lead(Pb)-free device • Device in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • Mobile Phones, Pagers, Personal Digital Assistants (PDA) • Handheld battery operated equipment Parts Table Part Description Qty / Reel TFDU2201-TR1 Orientated in carrier tape for side view mounting 750 pcs. TFDU2201-TR3 Orientated in carrier tape for side view mounting 2250 pcs. Pin Description Pin Number Function Description 1 IRED GND IRED cathode, ground, to be used as heat sink 2 IRED GND IRED cathode, ground, to be used as heat sink 3 IRED Anode IRED anode, to be driven by a current source 4 NC 5 NC 6 NC 7 Danode Detector anode 8 Dcathode Detector cathode Document Number 82539 Rev. 1.1, 08-Dec-04 I/O Active www.vishay.com 1 TFDU2201 Vishay Semiconductors Pinout TFDU2201 weight 100 mg 18228 Absolute Maximum Ratings Parameter Test Conditions Photo pin diode, reverse voltage range Symbol Min Vr - 0.3 Typ. Max Unit 12 V 10 mA IIRED(DC) 100 mA IIRED(RP) 550 mA 5 V Ptot 200 mW TJ 125 °C + 85 °C + 85 °C 240 °C Photo pin diode, reverse photo current Average IRED current Repetitive pulsed IRED current < 90 µs, ton < 20 % IRED, reverse voltage range Power dissipation VrIRED see Figure 3 Juntion temperature Ambient temperature range (operating) Storage temperature range Soldering temperature t = 20 s @ 215 °C, see Vishay Telefunken IrDA Design Guide Virtual source size Method: (1 - 1/e) encircled energy - 0.3 Tamb - 25 Tstg - 40 215 d 2 mm Compatible to Class 1 opration of IEC 60825 or EN60825 with worst case IrDA SIR pulse pattern, 115.2 kbit/s Electrical Characteristics Transceiver Tested for the following parameters (T = 25 °C, unless otherwise stated) Parameter Supported data rates www.vishay.com 2 Test Conditions base band Symbol Min 9.6 Typ. Max Unit 4000 kbit/s Document Number 82539 Rev. 1.1, 08-Dec-04 TFDU2201 Vishay Semiconductors Optoelectronic Characteristics Receiver Tested for the following parameters (T = 25 °:C, unless otherwise stated) Parameter Test Conditions Symbol Min Typ. Max Unit Sλ 1.0 1.2 1.8 nA/(mW/m2) 12 V 950 nm | α | ≤ ± 15 °, Vr = 2 V, λ = 875 nm Spectral sensitivity Bias voltage range, detector VRev Reverse leakage current 0.2 λ 800 Ee, max 8000 Spectral bandwith nA Max. operating irradiance | α | ≤ ± 90 °C, VCC = 2 V 15000 W/m2 Rise time @ load : R = 50 Ω Vr = 2 V, λ = 875 nm tr 40 ns Fall time @ load : R = 50 Ω Vr = 2 V, λ = 875 nm tr 40 ns Transmitter Tested for the following parameters (T = 25 °:C, unless otherwise stated) Test Conditions Symbol Forward current operating condition for low power IrDA operation Parameter Ie = 4 to 28 mW/sr in | α | ≤ ± 15 ° IF1 Output radiant intensity | α | ≤ ± 15 °, IF1 = 35 mA, 25 % duty cycle Ie 4 | α | ≤ ± 15 °, IF1 = 350 mA, 25 % duty cycle Ie 35 If = 50 mA Forward voltage Peak emission wavelength Spectral emission bandwith Optical rise/fall time 2 MHz square wave signal (duty cycle 1 : 1) Min Typ. Max 30 8 Unit mA 14 mW/sr mW/sr Vf 1.2 1.45 V λp 880 900 nm 45 nm 38 ns Recommended Solder Profile Solder Profile for Sn/Pb soldering 240 10 s max. @ 230°C 220 200 2°C - 4°C/s Temperature (°C) 180 160 140 120 120 s - 180 s 100 90 s max 80 60 2°C - 4°C/s 40 20 Lead-Free, Recommended Solder Profile The TFDU2201 is a lead-free transceiver and qualified for lead-free processing. For lead-free solder paste like Sn(3.0-4.0)Ag(0.5-0.9)Cu, there are two standard reflow profiles: Ramp-Soak-Spike (RSS) and Ramp-To-Spike (RTS). The Ramp-Soak-Spike profile was developed primarily for reflow ovens heated by infrared radiation. With widespread use of forced convection reflow ovens the Ramp-To-Spike profile is used increasingly. Shown below in figure 2 is Vishay’s recommended profile for use with the TFDU2201 transceivers. For more details please refer to Application note: SMD Assembly Instruction. 0 14874 0 50 100 150 200 250 300 350 Time ( s ) Figure 1. Recommended Solder Profile for Sn/Pb soldering Document Number 82539 Rev. 1.1, 08-Dec-04 www.vishay.com 3 TFDU2201 Vishay Semiconductors 275 T ≥ 255°C for 10 s....30 s 250 225 Tpeak = 260°C T ≥ 217°C for 70 s max 200 Temperature/°C 175 150 30 s max. 125 100 90 s...120 s 70 s max. 2°C...4°C/s 75 2°C...3°C/s 50 25 0 0 50 100 150 200 250 300 350 Time/s 19260 Figure 2. Solder Profile, RSS Recommendation 280 Tpeak = 260°C max. 260 240 220 200 Temperature/°C 180 <4°C/s 160 1.3°C/ 140 120 Time above 217°C t ≤ 70 s Time above 255°C t ≤ 30 s Peak temperature Tpeak = 260°C 100 80 <2°C/s 60 40 20 0 0 50 100 150 200 250 300 Time/s Figure 3. RTS Recommendation A ramp-up rate less than 0.9°C/s is not recommended. Ramp-up rates faster than 1.3°C/s could damage an optical part because the thermal conductivity is less than compared to a standard IC. www.vishay.com 4 Document Number 82539 Rev. 1.1, 08-Dec-04 TFDU2201 Vishay Semiconductors Current Derating Diagram Peak Operating Current ( mA ) 600 500 400 300 200 Current derating as a function of the maximum forward current of IRED. Maximum duty cycle: 25%. 100 0 –40 –20 0 14875 20 40 60 80 100 120 140 Temperature ( °C ) Figure 4. Current Derating Diagram Document Number 82539 Rev. 1.1, 08-Dec-04 www.vishay.com 5 TFDU2201 Vishay Semiconductors Package Dimensions in mm 7 x 0.8 0.5 2.3 1 14484 www.vishay.com 6 8 0.8 Document Number 82539 Rev. 1.1, 08-Dec-04 TFDU2201 Vishay Semiconductors Reel Dimensions W1 Reel Hub W2 14017 Tape Width A max. N W1 min. W2 max. W3 min. mm mm mm mm mm mm mm 24 330 60 24.4 30.4 23.9 27.4 Document Number 82539 Rev. 1.1, 08-Dec-04 W3 max. www.vishay.com 7 TFDU2201 Vishay Semiconductors Tape Dimensions in mm 18258_1 www.vishay.com 8 Document Number 82539 Rev. 1.1, 08-Dec-04 TFDU2201 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 82539 Rev. 1.1, 08-Dec-04 www.vishay.com 9