Preliminary KA5M0765RC S P S S P S TO -22 0F -5L The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed frequency oscillator, under voltage lock-out, leading edge blanking, optimized gate turn-on/turn-off driver, thermal shutdown protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. Compared to discrete MOSFET and PWM controller or RCC solution, a SPS can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in either a flyback converter or a forward converter. FEATURES • Precision fixed operating frequency (70kHz) • Low start-up current (Typ. 100mA) • Pulse by pulse current limiting • Over current protection • Over voltage protection (Min. 25V) • Internal thermal shutdown function • Under voltage lockout • Internal high voltage sense FET • Auto-restart mode 1. GND 2. Drain 3. Vcc 4. FB ORDERING INFORMATION Device Package Topr (°°C) KA5M0765RC TO-220F-5L −25°C to +85°C BLOCK DIAGRAM REV. B 1999 Fairchild Semiconductor Corporation Preliminary KA5M0765RC ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Value Unit Drain-source (GND) voltage (1) VDSS 650 V Drain-Gate voltage (RGS=1MΩ) VDGR 650 V Gate-source (GND) voltage VGS ±30 V IDM 28.0 ADC EAS 570 mJ IAS 20 A Continuous drain current (TC=25°C) ID 7.0 ADC Continuous drain current (TC=100°C) ID 5.6 ADC Supply voltage VCC 30 V Analog input voltage range VFB −0.3 to VSD V Total power dissipation PD (wt H/S) 140 W Derating 1.11 W/°C Drain current pulsed (2) Single pulsed avalanche energy (3) Avalanche current (4) Operating temperature TOPR −25 to +85 °C Storage temperature TSTG −55 to +150 °C NOTES: 1. Tj=25°C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=24mH, starting Tj=25°C 4. L=13uH, starting Tj=25°C Preliminary KA5M0765RC S P S ELECTRICAL CHARACTERISTICS (SFET part) (Ta=25°C unless otherwise specified) Characteristic Symbol Test condition Min. Typ. Max. Unit 650 − − V Drain-source breakdown voltage BVDSS VGS=0V, ID=50µA Zero gate voltage drain current IDSS VDS=Max., Rating, VGS=0V − − 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C − − 200 µA Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=0.5A − 1.25 1.6 Ω Forward transconductance (note) gfs VDS=50V, ID=0.5A 3.0 − − S Input capacitance Ciss − 1600 − pF Output capacitance Coss VGS=0V, VDS=25V, f=1MHz − 310 − Reverse transfer capacitance Crss − 120 − Turn on delay time td(on) − 25 − Rise time tr − 55 − Turn off delay time td(off) − 80 − Fall time tf − 50 − Total gate charge (gate-source+gate-drain) Qg − − 72 Gate-source charge Qgs − 9.3 − Gate-drain (Miller) charge Qgd − 29.3 − NOTE: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% VDD=0.5BVDSS, ID=1.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) nS nC Preliminary KA5M0765RC ELECTRICAL CHARACTERISTICS (Control part) (Ta=25°C unless otherwise specified) Characteristic Symbol Test condition Min. Typ. Max. Unit 4.80 5.00 5.20 V REFERENCE SECTION Output voltage (1) Vref Ta=25°C Temperature Stability (1)(2) Vref/∆T −25°C≤Ta≤+85°C − 0.3 0.6 mV/°C FOSC Ta=25°C 61 67 73 kHz ∆F/∆T −25°C≤Ta≤+85°C − ±5 ±10 % 74 77 80 % OSCILLATOR SECTION Initial accuracy Frequency change with temperature (2) PWM SECTION Maximum duty cycle − Dmax FEEDBACK SECTION Feedback source current IFB Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA Shutdown delay current Idelay Ta=25°C, 5V≤Vfb≤VSD 4 5 6 µA 4.40 5.00 5.60 A 8.4 9 9.6 V OVER CURRENT PROTECTION SECTION IL(max) Over current protection Max. inductor current UVLO SECTION − Start threshold voltage Vth(H) Minimum operating voltage Vth(L) After turn on 14 15 16 V Start current IST VCC=14V − 0.1 0.17 mA Operating supply current (control part only) IOPR VCC<28 − 7 12 mA VSD Vfb>6.5V 6.9 7.5 8.1 V 140 160 − °C 25 27 29 V TOTAL STANDBY CURRENT SECTION SHUTDOWN SECTION Shutdown Feedback voltage Thermal shutdown temperature (Tj) Over voltage protection (1) − TSD VOVP VCC>24V NOTES: 1. These parameters, although guaranteed, are not 100% tested in production 2. These parameters, although guaranteed, are tested in EDS (wafer test) process Preliminary KA5M0765RC S P S TYPICAL PERFORMANCE CHARACTERISTICS (SFET part) Fig 1. Output Characteristics VGS Top : 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V Bottom:4.5V 10 ID, Drain Current [A] 10 ID, Drain Current [A] Fig. 2 Transfer Characteristics 1 @Notes: 1. 300µ s Pulse Test 2. TC = 25 oC 0.1 1 150 oC 1 25 oC 0.1 10 @Notes: 1. VDS = 30 V 2. 300 µ s Pulse Test -25 oC 2 4 VDS, Drain-Source Voltage [V] 6 8 10 VGS, Gate-Source Voltage [V] Fig. 3 On-Resistance vs. Drain Current Fig. 4 Source-Drain Diode Forward Voltage 3.0 Vgs=10V 2.0 1.5 Vgs=20V 1.0 0.5 0.0 @ Note : Tj=25 IDR, Reverse Drain Current [A] RDS(on) , [ ] Drain-Source On-Resistance 2.5 10 1 0.1 0 2 4 6 8 25 oC 150 oC 0.4 10 @Notes: 1. VGS = 0V 2. 300 µ s Pulse Test 0.6 ID,Drain Current [A] 0.8 1.0 1.2 1.4 VSD, Source-Drain Voltage [V] Fig.5 Capacitance vs. Drain-Source Voltage Fig. 6 Gate Charge vs. Gate-Source Voltage 1800 Ciss = Cgs + Cgd (Cds = shorted) 1600 10 Coss = Cds + Cgd Ciss 1200 Crss = Cgd 1000 800 600 400 Coss 200 0 VDS=130V VGS,Gate-Source Voltage[V] Capacitance [pF] 1400 VDS=320V 8 VDS=520V 6 4 2 @Note : ID=3.0A Crss 1 10 VDS, Drain-Source Voltage [V] 0 0 5 10 15 QG,Total Gate Charge [nC] 20 25 Preliminary KA5M0765RC TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Fig. 7 Breakdown Voltage vs. Temperature Fig. 8 On-Resistance vs. Temperature 2.5 1.2 RDS(on), (Normalized) 1.0 @ Notes : 1. VGS = 0V 0.9 Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 2.0 1.1 2. ID = 250µ A 0.8 -50 0 50 100 1.5 1.0 @Notes: 1. VGS = 10V 2. ID = 1.5 A 0.5 0.0 150 -50 0 50 100 150 T J, Junction Temperature [oC] o TJ, Junction Temperature [ C] Fig. 9 Max. Safe Operating Area Fig. 10 Max. Drain Current vs. Case Temperature Operation in This Area is Limited by R DS(on) 3.0 10 µ s 101 2.5 ID, Drain Current [A] 100 µ s 1 ms 10 ms DC 0 10 @ Notes : 1. TC = 25 oC 10-1 2. TJ = 150 oC 3. Single Pulse 10-2 0 10 101 2.0 1.5 1.0 0.5 102 0.0 25 103 VDS , Drain-Source Voltage [V] 50 75 100 TC, Case Temperature [oC] Fig. 11 Thermal Response 100 ZθJ C(t) , Thermal Response ID , Drain Current [A] 102 D=0.5 0.2 @ Notes : 1. Zθ JC(t)=1.25 oC/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM*Zθ JC(t) 0.1 10-1 0.05 0.02 0.01 10-2 -5 10 single pulse 10-4 10-3 10-2 10-1 t1 , Square Wave Pulse Duration 100 [sec] 101 125 150 Preliminary KA5M0765RC S P S TYPICAL PERFORMANCE CHARACTERISTICS (Control part) Fig.1 Operating Frequency 1.2 1.15 1.1 1.05 Fosc 1 0.95 0.9 0.85 0.8 Fig.3 Operating Current 1.2 1.15 1.1 1.05 Iop 1 0.95 0.9 0.85 0.8 -25 1.5 1.1 0 25 50 75 100 125 150 Fig.4 Max Inductor Current 1.05 Ipeak 1 0.95 0.9 0.85 0 25 50 75 100 125 150 0.8 -25 Fig.5 Start up Current 0 25 50 75 100 125 150 Fig.6 Start Threshold Voltage 1.15 1.1 1.3 1.05 1.1 Istart Vstart 1 0.9 0.95 0.7 0.5 -25 Fig.2 Feedback Source Current 1.2 1.15 1.1 1.05 Ifb 1 0.95 0.9 0.85 0.8 -25 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150 Preliminary KA5M0765RC TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (These characteristic graphs are normalized at Ta=25°C) Fig.7 Stop Threshold Voltage 1.15 Fig.8 Maximum Duty Cycle 1.15 1.1 1.1 1.05 1.05 Vstop 1 Dmax 1 0.95 0.95 0.9 0.9 0.85 -25 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150 Fig.10 Shutdown Feedback Voltage Fig.9 Vcc Zener Voltage 1.15 1.2 1.15 1.1 1.05 Vz 1 0.95 0.9 0.85 0.8 -25 1.1 1.05 Vsd 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 Fig.11 Shutdown Delay Current 1.2 1.15 1.1 1.05 Idelay 1 0.95 0.9 0.85 0.8 -25 0 25 50 75 100 125 150 Fig.12 Over Voltage Protection 1.15 1.1 1.05 Vovp 1 0.95 0.9 0 25 50 75 100 125 150 0.85 -25 0 25 50 75 100 125 150 Preliminary KA5M0765RC S P S TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (These characteristic graphs are normalized at Ta=25°C) Fig.13 Soft Start Voltage Fig.14 Drain Source Turn-on Resistance 1.15 2.5 1.1 2 1.05 1 1.5 0.95 Rdson 1 0.9 0.5 Vss 0.85 -25 0 25 50 75 100 125 150 0 -25 0 25 50 75 100 125 150 KA5M0765RC LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 12/28/99 0.0m 001 Stock#DSxxxxxxxx 1999 Fairchild Semiconductor Corporation