PHOTO TRANSISTOR 光 電 晶 體 302 Photo Transistor Series Part Number: TN2469TK Package outlines NOTES: 1. All dimensions are in millimeters (inches); 2. Tolerances are ±0.2mm (0.008inch) unless otherwise noted. ITEM Resin (mold) Bonding wire MATERIALS Epoxy ¯ 30 µm Au Lens color Water transparent Dice Silicon PHOTO TRANSISTOR 光 電 晶 體 Part Number: TN2469TK Absolute maximum ratings Parameter (TA=25℃) Symbol Value Unit PD 100 mW Collector-emitter voltage VCEO 30 V Emitter-collector voltage VECO 5 V Operating temperature range TOP -20 ~+80 ℃ Storage temperature range TSTG -20 ~+80 ℃ Lead soldering temperature TSOL Power dissipation 260℃for 5 SEC (5mm [0.20”] from body) Electro-optical characteristics (TA=25℃) Value Symbol Unit Min Typ Max Parameter Test Condition Collector-emitter breakdown voltage IC = 100µA I B= 0 V (BR) CEO 30 -- -- V Emitter-collector breakdown voltage IE= 100µA I B= 0 V (BR) ECO 5 -- -- V Collector-emitter saturation voltage IC=2 mA I B=100µA VCE (SAT) -- -- 0.3 V TR -- 15 -- µS TF -- 15 -- µS ICEO -- -- 100 nA I(ON) 0.20 1.0 -- mA Rise time Fall time Collector dark current On state collector current VCE = 5V IC=1 mA RL = 1000Ω VCE = 20V E e = 0mW/cm2 VCE = 5V Ee = 1mW/cm2 λ=940nm 4-2