TOSHIBA 2SK3077

2SK3077
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3077
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
Unit: mm
l Output Power
: PO = 15.0 dBmW (Min.)
l Gain
: GP = 15.0 dB (Min.)
l Drain Efficiency
: ηD = 20% (Typ.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
10
V
Gate-Source Voltage
VGSS
5
V
ID
0.1
A
Drain Current
Power Dissipation
PD*
0.1
W
Channel Temperature
Tch
150
°C
Storage Temperature Range
Tstg
−45~150
°C
*:
Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB
JEDEC
JEITA
TOSHIBA
MARKING
1
—
—
2−2K1D
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2SK3077
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
Output Power
PO
Drain Efficiency
ηD
Power Gain
GP
Threshold Voltage
Vth
TEST CONDITION
VDS = 4.8V
Iidle = 43 mA (VGS = adjust)
f = 915 MHz, Pi = 0 dBmW
VDS = 4.8 V, ID = 0.5 mA
MIN
TYP.
MAX
UNIT
15.0
—
—
dBmW
—
20.0
—
%
15.0
—
—
dB
0.25
—
1.25
V
Drain Cut-off Current
IDSS
VDS = 10 V, VGS = 0 V
—
—
10
µA
Gate-Source Leakage Current
IGSS
VGS = 5 V, VDS = 0 V
—
—
5
µA
CAUTION
This transistor is the electrostatic sensitive device.
Please handle with caution.
RF OUTPUT POWER TEST FIXTURE
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2001-12-26
2SK3077
CAUTION
These are only typical curves and devices are not necessarily guaranteed at these curves.
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2SK3077
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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