DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLL1214-35 L-band radar LDMOS driver transistor Product specification 2002 Sep 27 Philips Semiconductors Product specification L-band radar LDMOS driver transistor FEATURES BLL1214-35 PINNING - SOT467C • High power gain PIN DESCRIPTION • Easy power control 1 drain • Excellent ruggedness 2 gate • Source on mounting base eliminates DC isolators, reducing common mode inductance. 3 source, connected to flange APPLICATIONS 1 • L-band radar applications in the 1200 to 1400 MHz frequency range. 3 DESCRIPTION 2 Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange. Top view MBK584 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Pulsed class-AB; t = 1 ms; δ = 10 % f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 1200 to 1400 36 35 >13 >43 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 75 V VGS gate-source voltage − ±15 V Ptot total power dissipation under RF conditions; Th ≤ 25 °C − 110 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C 2002 Sep 27 2 Philips Semiconductors Product specification L-band radar LDMOS driver transistor BLL1214-35 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS UNIT 1.1 K/W Th = 25 °C; note 1 thermal impedance from junction to heatsink Zth j-h VALUE Note 1. Thermal resistance is determined under RF operating conditions; tp = 1 ms, δ = 10 %. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 0.7 mA 75 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 70 mA 4.5 − 5.5 V IDSS drain-source leakage current VGS = 0; VDS = 36 V − − 10 µA IDSX on-state drain current VGS = VGSth + 9 V; VDS = 10 V 10 − − A IGSS gate leakage current VGS = ±20 V; VDS = 0 − − 125 nA gfs forward transconductance VDS = 10 V; ID = 2.5 A − 2 − S RDSon drain-source on-state resistance VGS = 10 V; ID = 2.5 A − 300 − mΩ APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Zth mb-h = 0.65 K/W, unless otherwise specified. f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) 1200 to 1400 36 50 35 >13 >43 MODE OF OPERATION Pulsed class-AB; t = 1 ms; δ = 10 % Ruggedness in class-AB operation The BLL1214-35 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 36 V; frequency from 1200 MHz to 1400 MHz at rated load power. Typical impedance FREQUENCY (GHZ) 2002 Sep 27 ZS (Ω) ZL (Ω) 1.20 6.48 − j 3.9 1.95 + j 3.27 1.25 3.88 − j 3.2 1.90 + j 2.57 1.30 3.28 − j 2.4 2.01 + j 2.27 1.35 2.55 − j 1.48 2.20 + j 2.26 1.40 1.69 − j 0.51 1.72 + j 2.35 3 Philips Semiconductors Product specification L-band radar LDMOS driver transistor MLD923 50 PL BLL1214-35 MLD924 20 Gp handbook, halfpage handbook, halfpage (W) (dB) 40 19 (1) (2) (1) (3) 30 18 20 17 10 16 (2) (3) 0 15 0.2 0 (1) f = 1.2 GHz. 0.4 0.6 (2) f = 1.3 GHz. 0.8 Pi (W) 1 10 0 30 40 50 PL (W) (3) f = 1.4 GHz. (1) f = 1.2 GHz. tp = 1 ms; δ = 10%. tp = 1 ms; δ = 10%. Fig.2 Fig.3 Load power as a function of input power; typical values. MLD925 60 20 (2) f = 1.3 GHz. (3) f = 1.4 GHz. Power gain as a function of load power; typical values. MLD926 20 Gp handbook, halfpage handbook, halfpage η (%) (dB) 60 ηD (%) 19 50 η D (3) (1) 40 (2) 18 40 Gp 17 30 20 16 15 1.1 0 0 10 20 30 40 20 50 PL (W) (1) f = 1.2 GHz. (2) f = 1.3 GHz. 1.3 10 1.5 1.4 f (GHz) (3) f = 1.4 GHz. tp = 1 ms; δ = 10%. tp = 1 ms; δ = 10%. Fig.4 Fig.5 Efficiency as a function of load power; typical values. 2002 Sep 27 1.2 4 Power gain and efficiency as functions of frequency; typical values. Philips Semiconductors Product specification L-band radar LDMOS driver transistor BLL1214-35 handbook, full pagewidth C7 C8 C5 C6 C9 C4 C14 C10 C3 R1 C1 C12 C11 C13 MCE033 Shaded areas indicate tuning stubs. Fig.6 Component layout. List of components (see Fig.6) COMPONENT DESCRIPTION VALUE CATALOGUE NO. C1, C12 capacitor 51 pF C3 capacitor 6.8 pF ATC100A C4, C9 capacitor 47 pF ATC100A C6, C7 capacitor 4.7 µF/50 V 475 50k 952 C5, C8 capacitor 2.3 nF ATC100B C10 capacitor 2.7 pF ATC100A C11 capacitor 1.0 pF ATC100A C13, C14 capacitor 1.5 pF ATC100A R1 chip resistor 82 Ω 2002 Sep 27 5 ATC100A Philips Semiconductors Product specification L-band radar LDMOS driver transistor BLL1214-35 PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C D A F 3 D1 U1 B q c C 1 E1 H U2 E A w1 M A M B M p 2 Q w2 M C M b 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H p Q q U1 U2 w1 w2 mm 4.67 3.94 5.59 5.33 0.15 0.10 9.25 9.04 9.27 9.02 5.92 5.77 5.97 5.72 1.65 1.40 18.54 17.02 3.43 3.18 2.21 1.96 14.27 20.45 20.19 5.97 5.72 0.25 0.51 inch 0.184 0.220 0.006 0.155 0.210 0.004 0.364 0.365 0.356 0.355 0.233 0.227 0.235 0.065 0.225 0.055 0.73 0.67 0.135 0.087 0.805 0.235 0.562 0.010 0.020 0.125 0.077 0.795 0.225 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-12-06 99-12-28 SOT467C 2002 Sep 27 EUROPEAN PROJECTION 6 Philips Semiconductors Product specification L-band radar LDMOS driver transistor BLL1214-35 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2002 Sep 27 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/01/pp8 Date of release: 2002 Sep 27 Document order number: 9397 750 09541