JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9016 TRANSISTOR (NPN) TO-92 1. EMITTER FEATURES Power dissipation PCM: 2. BASE 0.3 W (Tamb=25℃) 3. COLLECTOR Collector current 0.025 A ICM: Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO Ic= o.1mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 5 V Collector cut-off current ICBO VCB= 30V, IE=0 0.1 µA Emitter cut-off current IEBO VEB= 3V, IC=0 0.1 µA DC current gain hFE(1) VCE=5V, IC= 1mA VCE(sat) IC= 10mA, IB= 1mA fT VCE= 5V, IC= 1mA f =100MHz Collector-emitter saturation voltage Transition frequency 28 270 0.3 300 V MHz CLASSIFICATION OF hFE(1) Rank Range D E F G H I J 28-45 39-60 54-80 72-108 97-146 132-198 180-270