Power Transistors 2SA1499 Silicon PNP epitaxial planar type For high-speed switching Unit: mm ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –400 V Collector to emitter voltage VCEO –400 V Emitter to base voltage VEBO –7 V Peak collector current ICP –1.2 A Collector current IC – 0.6 A Collector power TC=25°C dissipation 25 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C 4.2±0.2 7.5±0.2 1.4±0.1 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) (TC=25˚C) Parameter Symbol Conditions Collector cutoff current ICBO VCB = –400V, IE = 0 Emitter cutoff current IEBO VEB = –7V, IC = 0 Collector to emitter voltage VCEO IC = –10mA, IB = 0 hFE1 Forward current transfer ratio φ3.1±0.1 W 2 ■ Electrical Characteristics 16.7±0.3 ● 2.7±0.2 4.0 ● High foward current transfer ratio hFE High-speed switching High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw. 14.0±0.5 ● 4.2±0.2 5.5±0.2 Solder Dip ● 10.0±0.2 0.7±0.1 ■ Features * min typ max Unit –100 µA –100 µA –400 VCE = –5V, IC = –100mA 30 10 V 160 hFE2 VCE = –5V, IC = –300mA Collector to emitter saturation voltage VCE(sat) IC = –300mA, IB = –60mA –1.0 V Base to emitter saturation voltage VBE(sat) IC = –300mA, IB = –60mA –1.2 V Transition frequency fT VCE = –10V, IC = –100mA, f = 1MHz Turn-on time ton IC = –300mA, 1.0 µs Storage time tstg IB1 = –60mA, IB2 = 60mA, 3.5 µs Fall time tf VCC = –100V 1.0 µs *h FE1 15 MHz Rank classification Rank Q P O hFE1 30 to 60 50 to 100 80 to 160 1 Power Transistors 2SA1499 PC — Ta IC — VCE VCE(sat) — IC TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) 35 30 – 0.7 IB=–40mA – 0.6 25 – 0.5 20 (1) 15 10 –10mA –8mA – 0.4 –6mA – 0.3 –4mA –2mA – 0.1 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –1 –2 –3 –4 –5 –6 –7 –8 VCE=–5V 25˚C – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 3000 – 0.1 – 0.3 TC=100˚C 300 25˚C 100 –25˚C 30 10 3 1 – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –1 10 tstg 3 ICP –1 IC t=1ms – 0.3 1 1s 10ms – 0.1 tf 0.3 – 0.03 ton 0.1 – 0.01 – 0.003 0.03 0.01 0 – 0.2 – 0.4 – 0.6 – 0.8 Collector current IC (A) 2 Non repetitive pulse TC=25˚C –3 Collector current IC (A) Switching time ton,tstg,tf (µs) Area of safe operation (ASO) –10 Pulsed tw=1ms Duty cycle=1% IC/IB=5(–IB1=IB2) VCC=–100V TC=25˚C 30 –1 Collector current IC (A) ton, tstg, tf — IC –1.0 – 0.001 –1 –3 –10 300 VCE=–10V f=1MHz TC=25˚C 100 30 10 3 1 0.3 Collector current IC (A) 100 Transition frequency fT (MHz) Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) – 0.3 –1 Collector current IC (A) fT — IC 1000 100˚C –25˚C 1000 IC/IB=5 TC=–25˚C 25˚C – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 hFE — IC 10000 –3 TC=100˚C –1 Collector to emitter voltage VCE (V) VBE(sat) — IC –1 –3 – 0.03 (3) 0 –10 – 0.1 –1mA 5 IC/IB=5 –30 – 0.3 – 0.2 (2) Collector to emitter saturation voltage VCE(sat) (V) –100 – 0.8 Collector current IC (A) Collector power dissipation PC (W) 40 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) 0.1 – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 Collector current IC (A) –1 Power Transistors 2SA1499 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3