Intelligent Power Devices (IPDs) MIP517 Silicon MOSFET type integrated circuit ■ Features Unit : mm ■ Applications 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 3 • Lamp-Solenoid, driver • Motor driver 2 0.4±0.2 2.8+0.2 –0.3 6 5° 5 1.50+0.25 –0.05 4 0.16+0.10 –0.06 1 0.65±0.15 • Built-in five protection functions. (over-current, over-voltage, loadshort-circuit, over heat, ESD) • Driving directly from CMOS (microcomputer) is possible. • Although it is a small package, it has resistance of low heat. (When mounted in a substrate.) 0.30+0.10 –0.05 0.50+0.10 –0.05 Symbol Rating Unit VDS − 0.5 to +45 V Output current IO 0.7 A Input voltage VIN − 0.5 to +6.0 V Input current IIN ±2 mA Drain clamp energy endurance *1 ECLP 1.8 mJ Power dissipation 1 *2 PD1 0.2 W Drain-source voltage Power dissipation 2 *3 Operating ambient temperature PD2 0.8 W Topr −40 to +85 °C Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 Parameter 1.1+0.2 –0.1 ■ Absolute Maximum Ratings TC = 25°C ± 3°C 1.1+0.3 –0.1 10° 1 : Drain 2 : Drain 3 : Source 4 : In 5 : Drain 6 : Drain Mini6-G1 Package Marking Symbol: MC Note) *1: L = 10 mH, IL = 0.6 A, VDD = 20 V, 1 pulse, TC = 25°C *2: Single unit *3: Mounting on the PCB (40 mm2, thickness 1.7mm glass epoxy substrate) (Ta = 25°C) ■ Block Diagram Drain Over-current protection Load short-circuit protection Gate cutoff circuit In ESD protection Over-heat protection Over-voltage protection Source Publication date: November 2003 SLB00073AED 1 MIP517 ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit 1.1 1.65 Ω 1.1 1.65 RDS(on) VIN = 5 V, IDS = 0.5 A Drain-source voltage VDS(on) VIN = 5 V, IDS = 0.5 A Drain clamp voltage VDS(CLP) VIN = 0 V, IDS = 3 mA Drain-source cutoff current 1 IDS(off)1 VIN = 0 V, VDS = 12 V 0.01 5 Drain-source cutoff current 2 IDS(off)2 VIN = 0 V, VDS = 25 V 0.02 8 Drain-source cutoff current 3 IDS(off)3 VIN = 0 V, VDS = 40 V 0.08 10 Input voltage high-level VIN(H) IDS = 0.5 A Input voltage low-level VIN(L) IDS = 1 mA Input current (normal) IIN(on) VIN = 5 V, VDS = 0 V Drain-source ON resistance IIN(PROT) VIN = 5 V IOCP VIN = 5 V Short circuit load protection limit VDS(SHT) VIN = 5 V Input voltage of act on protection VIN(PROT) Input current (act on protection) * Over current protection limit 45 52 4 0.7 V V µA V 0.8 V 0.2 0.5 mA 0.75 1.10 mA 1.1 A 1.0 1.6 V 4.0 5.0 V Note) 1. At on-state when drain voltage exceeds the "Short circuit load protection voltage", output current begin to oscillate. 2. When drain voltage exceeds the "drain clamp voltage" output MOS turn on, so drain voltage are clamped before the drain-source junction become breakdown 3. *: State of short circuit laod protection and over heat protection (designed guarantee). ■ Electrical Characteristics (Reference value: Non guarantee value) Parameter Cutoff temperature at overheat Symbol TSHD Turn-on time tON Turn-off time tOFF Conditions VIN = 5 V VDD = 30 V, RL = 60 Ω IDS = 0.5 A, VIN = 5 V Min Typ Max Unit 140 °C 3 µs 7 Note) If the chip temperature exceeds the "over heat protection temperature", output current is shut down. And if the chip cool down, the protection will operate automatically again. 2 SLB00073AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP