Silicon Junction FETs (Small Signal) 2SK3426 Silicon N-Channel Junction Unit: mm 0.33+0.05 –0.02 For impedance conversion in low frequency For electret capacitor microphone 0.10+0.05 –0.02 0.15 min. 5˚ ■ Features 1.20±0.05 0.80±0.05 3 2 0.15 min. 1 0.23+0.05 –0.02 • High mutual conductance gm • Low noise voltage of NV (0.40) (0.40) 0.80±0.05 1.20±0.05 0.52±0.03 5˚ Parameter Rating Unit VDSO 20 V Drain-gate voltage VDGO 20 V Drain-source current IDSO 2 mA Drain-gate current IDGO 2 mA Gate-source current IGSO 2 mA Allowable power dissipation PD 100 mW Operating ambient temperature Topr −20 to +80 °C Storage temperature Tstg −55 to +125 °C 0.15 max. Symbol Drain-source voltage 0 to 0.01 ■ Absolute Maximum Ratings Ta = 25°C 1: Drain 2: Source 3: Gate SSSMini3-F1 Package Marking Symbol: 4E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Drain current Symbol Conditions Min ID *1 VDS = 2.0 V, RD = 2.2 kΩ ± 1% 100 Typ IDSS VDS = 2.0 V, RD = 2.2 kΩ ± 1%, VGS = 0 107 Mutual conductance gm VD = 2.0 V, VGS = 0, f = 1 kHz 660 Noise voltage NV VD = 2.0 V, RD = 2.2 kΩ ± 1% CO = 5 pF, A-Curve Voltage gain GV1 VD = 2.0 V, RD = 2.2 kΩ ± 1% CO = 5 pF, eG = 10 mV, f = 1 kHz −8.5 −3.0 GV2 VD = 12 V, RD = 2.2 kΩ ± 1% CO = 5 pF, eG = 10 mV, f = 1 kHz −5.0 − 0.5 GV3 VD = 1.5 V, RD = 2.2 kΩ ± 1% CO = 5 pF, eG = 10 mV, f = 1 kHz −9.0 −3.5 ∆GV. f*2 Voltage gain difference Max Unit 330 µA 310 µS 1 300 8 VD = 2.0 V, RD = 2.2 kΩ ± 1% CO = 5 pF, eG = 10 mV, f = 1 kHz to 70 Hz 0 µV dB 1.5 GV2 − GV1 0 4.0 GV1 − GV3 0 1.5 dB Note) *1: ID is assured for IDSS. *2: ∆GV. f is assured for AQL 0.065%. (the measurement method is used by source-grounded circuit.) Publication date: April 2002 SJF00033AED 1 2SK3426 PD Ta ID VDS VDS = 2 V 1.4 100 80 60 40 1.2 0.3 V 1.0 0.2 V 0.8 0.6 0.1 V 0.4 0V 20 0.2 0 20 40 60 80 0 100 120 140 0 2 8 10 Yfs ID VDS = 2 V Ta = 25°C VDS = 2 V 1.0 0.8 0.6 0.4 0.2 – 0.8 6 1.6 1.2 0 – 1.0 4 Drain-source voltage VDS (V) Forward transadmittance Yfs (mS) 1.4 – 0.6 – 0.4 – 0.2 Gate-source voltage VGS (V) 0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.20 Ta = 75°C 0.15 25°C 0.10 −25°C 0.05 − 0.1 V Yfs VGS 1.6 Drain current ID (mA) 0.25 Ambient temperature Ta (°C) Forward transadmittance Yfs (mS) VGS = 0.4 V Ta = 25°C 0 2 ID VGS 0.30 1.6 Drain current ID (mA) Allowable power dissipation PD (mW) 120 0 20 40 60 80 100 120 140 150 160 200 Drain current ID (µA) SJF00033AED 0 – 0.5 – 0.4 – 0.3 – 0.2 – 0.1 Gate-source voltage VGS (V) 0 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. 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