CCD30–11 Open Electrode High Performance CCD Sensor FEATURES * 1024 by 256 Pixel Format * 26 mm Square Pixels * Image Area 26.6 x 6.7 mm * Wide Dynamic Range * Symmetrical Anti-static Gate Protection * Open Electrode Structure for Enhanced Quantum Efficiency * Advanced Inverted Mode Operation * Anti-blooming Readout Register * Zero Light Emitting Output Amplifier APPLICATIONS * Spectroscopy * Scientific Imaging * TDI Operation INTRODUCTION The open electrode CCD30-11 is a high performance CCD sensor designed as an upgrade for the standard CCD30-11, for use in the scientific spectroscopy instrument market, where enhanced quantum efficiency is required at near-ultraviolet wavelengths. With an array of 1024 x 256 26 mm square pixels it has an imaging area to suit most spectrometer outputs of 26.6 x 6.7 mm (1.05 x 0.26 inch). The readout register is organised along the long (1024 pixel) edge of the sensor and contains an anti-blooming drain to allow high speed binning operations of low level signals which may be adjacent to much stronger signals. The novel output amplifier design has no light emission. Standard three phase clocking and buried channel charge transfer are employed and Inverted Mode Operation (IMO) is included as standard. The open electrode CCD30-11 is packaged in a 20-pin DIL ceramic package and is pin compatible (but not completely clock compatible) with the standard CCD30-11. Designers are advised to consult e2v technologies should they be considering using CCD sensors in abnormal environments or if they require customised packaging. TYPICAL PERFORMANCE Pixel readout frequency . Output amplifier sensitivity Peak signal . . . . . Dynamic range . . . . Spectral range . . . . Readout noise (at 140 K, 20 QE at 700 nm . . . . Peak output voltage . . . . . . . . . . . . kHz) . . . . . . . . . . . . . 20 – 1000 kHz . . . . 1.5 mV/e7 . . . 300 ke7/pixel . 75 000:1 200 – 1060 nm . . . . 4 e7 rms . . . 50 % . . . 450 mV GENERAL DATA Format Image area . . Active pixels (H) (V) Pixel size . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26.6 x 6.7 . . 1024 . . . 256 . . 26 x 26 mm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32.89 x 20.07 mm . . . . . . . 20 . . . . . 2.54 mm . . . . . 15.24 mm quartz or removable glass mm Package Package size . . Number of pins . Inter-pin spacing Inter-row spacing Window material e2v technologies (uk) limited, Waterhouse Lane, Chelmsford, Essex CM1 2QU, UK Telephone: +44 (0)1245 493493 Facsimile: +44 (0)1245 492492 e-mail: [email protected] Internet: www.e2v.com Holding Company: e2v technologies plc e2v technologies inc. 4 Westchester Plaza, PO Box 1482, Elmsford, NY10523-1482 USA Telephone: (914) 592-6050 Facsimile: (914) 592-5148 e-mail: [email protected] # e2v technologies (uk) limited 2005 A1A-100008 Issue 8, February 2005 411/8893 PERFORMANCE Min Peak charge storage (see note 1) Peak output voltage (unbinned) Dark signal at 293 K (see note 2) Charge transfer efficiency (see note 3): parallel serial Output amplifier sensitivity Readout noise at 140 K (see note 4) Readout frequency (see note 5) Response non-uniformity (std. deviation) Dark signal non-uniformity at 293 K (std. deviation) Output node capacity relative to image section Typical 200k – – Max 300k 450 250 – – 1.3 – – – 99.9999 99.9993 1.8 4 20 3 – – – 2.3 6 5000 10 100 – e7/pixel mV e7/pixel/s – – 500 % % mV/e7 7 rms e /pixel kHz % of mean e7/pixel/s 200 4.0 – Typical Max ELECTRICAL INTERFACE CHARACTERISTICS Electrode capacitances (measured at mid-clock level): Min I1/I1 interphase R1/R1 interphase I1/SS R1/SS Output impedance – – – – – NOTES 2.0 70 11 185 300 White spots 1. Signal level at which resolution begins to degrade. 2. The typical average (background) dark signal at any temperature T (kelvin) between 230 and 300 K is given by: Qd/Qd0 = 1.14 x 106T3e79080/T where Qd0 is the dark current at 293 K. Note that this is typical performance and some variation may be seen between devices. Below 230 K additional dark current components with a weaker temperature dependence may become significant. 3. CCD characterisation measurements made using charge generated by X-ray photons of known energy. 4. Measured using a dual-slope integrator technique (i.e. correlated double sampling) with a 10 ms integration period. 5. Readout above 5000 kHz can be achieved but performance to the parameters given cannot be guaranteed. BLEMISH SPECIFICATION Traps Pixels where charge is temporarily held. Traps are counted if they have a capacity greater than 200 e7 at 233 K. Slipped columns Are counted if they have an amplitude greater than 200 e7. Black spots Are counted when they have a responsivity of less than 90% of the local mean signal illuminated at approximately half saturation. – – – – – nF pF nF pF O Are counted when they have a generation rate 100 times the specified maximum dark signal generation rate at 293 K (measured between 233 and 273 K). The typical temperature dependence of white spot blemishes is different from that of the average dark signal and is given by: Qd/Qd0 = 122T3e76400/T White column Black column A column which contains at least 9 white defects. A column which contains at least 9 black defects. GRADE Column defects: black or slipped white Black spots: 53 pixels 55 pixels 510 pixels 410 pixels Traps 4200 e7 White spots 0 1 2 0 0 1 0 6 0 2 1 0 0 1 10 3 2 0 0 2 10 15 8 1 0 5 15 Minimum separation between adjacent black columns . . . . . . . . . 50 pixels Note The effect of temperature on defects is that traps will be observed less at higher temperatures but more may appear below 233 K. The amplitude of white spots and columns will decrease rapidly with temperature. 100008, page 2 # e2v technologies TYPICAL OUTPUT CIRCUIT NOISE (Measured using clamp and sample) 15 NOISE EQUIVALENT SIGNAL (e— rms) 7180A PREDICTED 10 5 MEASURED AT 180 K 0 10k FREQUENCY (Hz) 50k 100k 500k 1M 5M TYPICAL SPECTRAL RESPONSE (No window) 7386A 60 50 QUANTUM EFFICIENCY (%) 40 30 20 10 0 200 300 400 WAVELENGTH (nm) 500 600 700 800 900 1000 1100 Note UV QE varies rapidly with wavelength over the 200 to 400 nm range due to the thick AR coating. TYPICAL VARIATION OF DARK SIGNAL WITH SUBSTRATE VOLTAGE 105 7134C DARK CURRENT (e7/pixel/s) 104 TYPICAL RANGE 103 102 0 1 2 SUBSTRATE VOLTAGE (V) # e2v technologies 3 4 5 6 7 8 9 10 100008, page 3 TYPICAL VARIATION OF DARK CURRENT WITH TEMPERATURE 104 7329 103 102 DARK CURRENT (e7/pixel/s) 10 1 1071 1072 740 720 PACKAGE TEMPERATURE (8C) 0 20 40 DEVICE SCHEMATIC 7135A 20 SG 19 DD 18 17 SS 16 RD 15 OD 14 OS 13 OG 12 11 8 BLANK ELEMENTS 8 BLANK ELEMENTS SUB READ-OUT REGISTER IMAGE SECTION TOP VIEW 100008, page 4 1 2 I13 3 I12 4 I11 1024 X 256 ACTIVE ELEMENTS 5 SS 6 1R 7 R13 8 R12 9 R11 10 # e2v technologies CONNECTIONS, TYPICAL VOLTAGES AND ABSOLUTE MAXIMUM RATINGS PIN 1 REF DESCRIPTION PULSE AMPLITUDE OR DC LEVEL (V) (see note 6) Min Typical Max – No connection – MAXIMUM RATINGS with respect to VSS – 2 I13 Image section, phase 3 (clock pulse) 10 12 15 +20 V 3 I12 Image section, phase 2 (clock pulse) 10 12 15 +20 V 4 I11 Image section, phase 1 (clock pulse) 10 12 15 +20 V 5 SS Substrate 11 – 6 1R Output reset pulse 10 12 15 +20 V 7 R13 Readout register, phase 3 (clock pulse) 10 12 15 +20 V 8 R12 Readout register, phase 2 (clock pulse) 10 12 15 +20 V 9 R11 Readout register, phase 1 (clock pulse) 10 12 15 +20 V 10 – No connection see note 7 – 11 – No connection see note 7 – 12 OG Output gate 13 OS Output transistor source 14 OD Output drain 27 29 31 70.3 to +25 V 15 RD Reset transistor drain 17 18 19 70.3 to +25 V 16 SS Substrate 11 70.3 to +25 V 17 – No connection 18 DD Diode drain 20 22 25 70.3 to +25 V 19 SG Spare gates 0 0 20 – No connection 8 9.5 2 3.5 5 8 9.5 +20 V 70.3 to +25 V see note 8 – – VSS+19 – +20 V – If all voltages are set to the ‘typical’ values, operation at or close to specification should be obtained. Some adjustment within the minimum – maximum range specified may be required to optimise performance. Voltage between pairs of pins: OS to OD + 15 V. Maximum current through any source or drain pin: 10 mA. OUTPUT CIRCUIT 6923B RD R13 1R I13 (SEE NOTE 9) OD OG OS OUTPUT EXTERNAL LOAD (SEE NOTE 8) SS SS 0V NOTES 6. 7. 8. 9. All pulse low levels 0 + 0.5 V. There is no access to the temperature sensing diodes in the back-thinned version of the CCD30-11. Not critical; can be a 1 – 5 mA constant current source, or 5 – 10 kO resistor. The amplifier has a DC restoration circuit, which is activated internally whenever I13 is pulsed high. # e2v technologies 100008, page 5 FRAME READOUT TIMING DIAGRAM SEE DETAIL OF LINE TRANSFER READOUT PERIOD 5256 CYCLES I11 7131 CHARGE COLLECTION PERIOD I12 I13 SEE DETAIL OF OUTPUT CLOCKING R11 R12 R13 1R OUTPUT SWEEPOUT FIRST VALID DATA DETAIL OF LINE TRANSFER twi 7132A I11 1 /3 Ti toi tli I12 toi tli I13 tdri Ti tdir R11 R12 R13 1R 100008, page 6 # e2v technologies DETAIL OF OUTPUT CLOCKING 7133A R11 Tr tor R12 R13 twx tdx 1R SIGNAL OUTPUT OUTPUT VALID OS RESET FEEDTHROUGH LINE OUTPUT FORMAT 7130A 8 BLANK 8 BLANK 1024 ACTIVE OUTPUTS CLOCK TIMING REQUIREMENTS Symbol Ti twi tri tfi toi tli tdir tdri Tr trr tfr tor twx trx, tfx tdx Description Image clock period Image clock pulse width Image clock pulse rise time (10 to 90%) Image clock pulse fall time (10 to 90%) Image clock pulse overlap Image clock pulse, two phase low Delay time, I1 stop to R1 start Delay time, R1 stop to I1 start Output register clock cycle period Clock pulse rise time (10 to 90%) Clock pulse fall time (10 to 90%) Clock pulse overlap Reset pulse width Reset pulse rise and fall times Delay time, 1R low to R13 low Min 50 25 5 tri 3 2 3 1 200 50 trr 20 30 20 30 Typical 90 45 20 20 10 10 10 2 see note 11 0.1Tr 0.1Tr 0.5trr 0.1Tr 0.5trr 0.5Tr Max see note see note 0.5toi 0.5toi 0.2Ti 0.2Ti see note see note see note 0.3Tr 0.3Tr 0.1Tr 0.2Tr 0.2Tr 0.8Tr 10 10 10 10 10 ms ms ms ms ms ms ms ms ns ns ns ns ns ns ns NOTES 10. No maximum other than that necessary to achieve an acceptable dark signal at the longer readout times. 11. As set by the readout period. # e2v technologies 100008, page 7 OUTLINE (All dimensions without limits are nominal) A 6911B M D 20 F 11 C 1 B E 10 COVERGLASS SEE NOTE IMAGING AREA L Outline Note PIN 1 G H The device is normally supplied with a temporary glass window for protection purposes. It can also be supplied with a fixed, quartz or fibre-optic window where required. J K Ref Millimetres A B C D E 32.89 + 0.38 20.07 + 0.25 6.7 3.30 + 0.33 15.24 + 0.25 + 0.051 0.254 7 0.025 5.21 0.46 + 0.05 2.54 + 0.13 22.86 + 0.13 1.65 + 0.56 26.6 F G H J K L M 100008, page 8 # e2v technologies ORDERING INFORMATION HANDLING CCD SENSORS Options include: CCD sensors, in common with most high performance MOS IC devices, are static sensitive. In certain cases a discharge of static electricity may destroy or irreversibly degrade the device. Accordingly, full antistatic handling precautions should be taken whenever using a CCD sensor or module. These include:- * Temporary Quartz Window * Permanent Quartz Window * Temporary Glass Window For further information on the performance of these and other options, please contact e2v technologies. * Working at a fully grounded workbench * Operator wearing a grounded wrist strap * All receiving socket pins to be positively grounded * Unattended CCDs should not be left out of their conducting foam or socket. Evidence of incorrect handling will invalidate the warranty. All devices are provided with internal protection circuits to the gate electrodes (pins 2, 3, 4, 6, 7, 8, 9, 12, 19) but not to the other pins. HIGH ENERGY RADIATION Device parameters may begin to change if subject to an ionising dose of greater than 104 rads. Certain characterisation data are held at e2v technologies. Users planning to use CCDs in a high radiation environment are advised to contact e2v technologies. TEMPERATURE LIMITS Min Typical Max Storage . . . . . . . 73 – 373 K Operating . . . . . . . 73 233 323 K Operation or storage in humid conditions may give rise to ice on the sensor surface, causing irreversible damage. Device heating/cooling . . . . . . . 5 K/min max Whilst e2v technologies has taken care to ensure the accuracy of the information contained herein it accepts no responsibility for the consequences of any use thereof and also reserves the right to change the specification of goods without notice. e2v technologies accepts no liability beyond that set out in its standard conditions of sale in respect of infringement of third party patents arising from the use of tubes or other devices in accordance with information contained herein. # e2v technologies Printed in England 100008, page 9