ETC TC3151

TC3151
Nov. 2001
2.4 GHz 2W MMIC
FEATURES
•
•
•
•
•
PHOTO ENLARGEMENT
P-1 dB: 33 dBm
Small Signal Gain: 28 dB
Power Added Efficiency: 36 %
IP3: 42 dBm
DC Power: 5.6 W
GND
Pout
Pout
Vg
RF In
RF In
GRD
Vd
DESCRIPTION
The TC3151 is a 2 stage PHEMT MMIC power amplifier. It is designed for use in low cost, high volume,
2.4-2.5 GHz ISM band applications. The MMIC provides a typical gain of 28 dB and saturation power of more
than 34 dBm. Typical bias condition is 7V at 800 mA. The MMIC is a packaged in a standard SO-8 power
package. The copper based carrier of the package allows direct soldering of the device to the PCB for proper
heat sinking. The input and output matching of the MMIC require minimum external components.
Typical
Small
Signal
Gain (dB)
-5
31
Typical
Input
Return
Loss (dB)
30
29
-10
-15
28
-20
27
2.4
-25
2.5
2.4
Frequency (GHz)
2.5
Frequency (GHz)
ELECTRICAL SPECIFICATIONS (Ta = 25 °C)
SYMBOL
FREQ
SSG
P-1 dB
P3 dB
PAE
IP3
RL, IN
VDD
Vg
IDD
ID_P-1 dB
DESCRIPTION
Frequency Range
Small Signal Gain
Output Power at 1 dB Gain Compression
Output Power at 3 dB Gain Compression
Power Added Efficiency
Third Order Intercept Point
Input Return Loss
Supply Voltage
Gate Voltage
Current Supply Without RF
Current Supply @ Pout = P-1 dB
Teletronics International Inc.
www.teletronics.com
MIN
2.4
27
32
33
41
9
-0.6
TYP
28
33
34
36
42
12
7
-1.2
800
920
1803 Research Blvd. Suite 404 Rockville, MD. USA 20850
Phone: 301-309-8500 Fax: 301-309-8851
MAX
2.5
-2
UNITS
GHz
dB
dBm
dBm
%
dBm
dB
Volt
Volt
mA
mA
TC3151
TEST CIRCUITS
Evaluation Board Schematic
EVALUATION BOARD
PCB Material: FR4
ER = 4.6
Thickness = 31 mil
Unit: mil
Evaluation Board Parts List
Part Type
Capacitor
Capacitor
Capacitor
Capacitor
Capacitor
Capacitor
Capacitor
Capacitor
Reference Designator
C1
C2
C3
C4
C5
C6~8
C9~11
C12
Teletronics International Inc.
www.teletronics.com
Description
3.3 pF 0603
2.5 pF 0603
1 pF 0603
0.75 pF
1.5 pF 0603
1000 pF 0603
0.1 uF 0603
4.7uF 1206
Manufacturer
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Part Number
GRM39C0G3R3C50V
GRM39C0G2R5C50V
GRM39C0G010C50V
GRM39C0GR75C50V
GRM39C0G1R5C50V
GRM39C0G102J50V
GRM39Y5V104Z25V
Tan Cap
1803 Research Blvd. Suite 404 Rockville, MD. USA 20850
Phone: 301-309-8500 Fax: 301-309-8851
TC3151
CONNECTION DIAGRAM AND PIN DESCRIPTIONS
Vg
RF IN
Matching
Circuit
GND
4
5
3
6
2
7
1
8
GND
Matching
Circuit
RF OUT
Vd
Pin #
1
2, 3
Name
GND
RF IN
4
5
6, 7
Vg
GND
RF OUT
8
Vd
Description
Ground
RF input (internally DC
blocked)
FET gate bias
Ground
RF output and Vd2 External
matching circuit required
Input stage drain bias
PHYSICAL DEMENSIONS
α
L
C
b
E1
E
L1
DIMENSION
A1
A
e
MINIMUM
NOMINAL
A
A1
b
c
D
E
E1
e
L
L1
α
Dimensions in inches
0.002MAX
D
Teletronics International Inc.
www.teletronics.com
1803 Research Blvd. Suite 404 Rockville, MD. USA 20850
Phone: 301-309-8500 Fax: 301-309-8851
MAXIMUM