Power Transistors www.jmnic.com 2SC2334 Silicon NPN Transistors Features BCE ﹒With TO-220 package ﹒Complement to type 2SA1010 ﹒For high speed switching industrial use Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT V VCBO Collector to base voltage 150 VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V ICP Peak collector current 15 A IC Collector current 7 A PC Collector power dissipation 40 W Tj Junction temperature 150 Tstg Storage temperature TO-220 -55~150 Electrical Characteristics Tc=25 SYMBOL ICBO PARAMETER Collector-base cut-off current CONDITIONS VCB=100V; IE=0 IEBO Emitter-base cut-off current VEB=5V; IC=0 ICEO Collector-emitter cut-off current VCBO Collector-base breakdown voltage V(BR)ceo VEBO Collector-emitter breakdown voltage IC=200mA; IB=0 MIN TYP MAX 10 10 100 UNIT A A V Emitter-base breakdown voltage VCE(sat-1) Collector-emitter saturation voltages VCE(sat-2) Collector-emitter saturation voltages IC=5A; IB=0.5A 0.6 V hFE-1 Forward current transfer ratio IC=3A; VCE=5V 40 hFE-2 Forward current transfer ratio IC=0.5A; VCE=5V 40 hFE-3 Forward current transfer ratio IC=5A; VCE=5V 20 Base-emitter saturation voltages IC=5A; IB=0.5A 1.5 VCC=50V IC=5A IB1=-IB2=0.5A RL=50 0.5 s 0.5 s 1.5 s VBE(sat)1 ton Turn-on time tstg Storage time tf Fall time hFE-2 classification R O Y 40-80 70-140 120-240 JMnic 240 V