TSDF12830YS VISHAY Vishay Semiconductors Dual - MOSMIC®- two AGC Amplifiers for TV-Tuner Prestage with Integrated Band Switch for One-Line Switching Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY CW Description The Dual-MOSMIC® TSDF12830YS, assembled in the well-known SOT-363 plastic package, is a combination of two different MOSMIC® amplifiers with common Source and common Gate 2 leads and an integrated switch. One of the MOSMIC stages is optimized for use in VHF applications, especially regarding cross modulation performance and noise figure at lower VHF frequencies, whereas the other stage is optimized for use in UHF applications regarding gain and noise figure performance at higher frequencies of UHF range. The integrated switch is operated by the Gate 1 bias of the UHF amplifier on Pin 6. All of the Gates are protected against excessive input voltage surges by integrated antiserial diodes between themselves and Source. WM5 1 2 3 18597 Electrostatic sensitive device. Observe precautions for handling Typical Application 2 AGC C VHF in RFC G2 (common) C 1 G1 AMP1 D 3 C +5 V VHF out Features • Two differently optimized amplifiers in a single package. One of them has a fully internal self-biasing network on chip and the other has a partly integrated bias for easy Gate 1 switch-off with PNP switching transistors inside PLL -IC • Internal switch for saving lines on PCB layout as well as external components • Integrated gate protection diodes • Low noise figure, high gain • Typical forward transadmittance of 31 mS resp. 28 mS • Superior cross modulation at gain reduction • High AGC-range with soft slope • Main AGC control range from 3 V to 0.5 V Applications Low noise gain controlled VHF and UHF input stages with 5 V supply voltage, such as in digital and analog TV tuners and in other multimedia and communications equipment. Document Number 85171 Rev. 1.2, 25-Aug-04 RFC RG1 V GG UHF in C AMP2 6 G1 D 4 C +5 V UHF out S (common) 5 18598 V GG = 5 V: UHF AMP is on; VHF AMP is off V GG = 0 V: UHF AMP is off; VHF AMP is on (0 = shorted to Ground or open) Mechanical Data Case: SOT-363 Plastic case Weight: approx. 6.0 mg V - Vishay Y - Year, is variable for digit from 0 to 9 (e.g. 3 = 2003, 4 = 2004) CW - Calendar Week, is variable for number from 01 to 52 Number of Calendar Week is always indicating place of pin 1 Pinning: 1 = Gate 1 (VHF amplifier), 2 = Gate 2 (common) 3 = Drain (VHF amplifier), 4 = Drain (UHF amplifier), 5 = Source (common), 6 = Gate1 (UHF amplifier) www.vishay.com 1 TSDF12830YS VISHAY Vishay Semiconductors Parts Table Part Marking TSDF12830YS Package WM5 SOT-363 Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Amplifier 1 Following data are valid for operating amplifier 1 (pin 1, 3, 2, 5) which is optimized for VHF applications Parameter Test condition Symbol Value VDS 8 V ID 30 mA ± IG1/G2SM 10 mA + VG1± VG2SM 6 V Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Unit - VG1SM 1.5 V Ptot 200 mW Channel temperature TCh 150 °C Storage temperature range Tstg - 55 to + 150 °C Gate 1 - source voltage Total power dissipation Tamb ≤ 60 °C Amplifier 2 Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for UHF applications Parameter Test condition Drain - source voltage Value Unit VDS 8 V ID 25 mA ± IG1/G2SM 10 mA + VG1/± VG2SM 6 V Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Symbol - VG1SM 1.5 V Ptot 200 mW Channel temperature TCh 150 °C Storage temperature range Tstg - 55 to + 150 °C Symbol Value Unit RthChA 450 K/W Gate 1 - source voltage Total power dissipation Tamb ≤ 60 °C Maximum Thermal Resistance Parameter Channel ambient 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu www.vishay.com 2 Test condition 1) Document Number 85171 Rev. 1.2, 25-Aug-04 TSDF12830YS VISHAY Vishay Semiconductors Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Amplifier 1 Following data are valid for operating amplifier 1 (pin 1, 3, 2, 5) which is optimized for VHF applications Max Unit Gate 1 - source breakdown voltage Parameter + IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS Test condition Symbol Min 7 Typ. 10 V Gate 2 - source breakdown voltage ± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS 7 10 V Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0 Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0 + IG1SS 50 µA ± IG2SS 20 nA Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V, Gate 1 = nc IDSP 8 17 mA VG2S(OFF) 0.3 1.2 V Max Unit Gate 2 - source cut-off voltage VDS = VRG1 = 5 V, Gate 1 = nc, ID = 20 µA 13 Amplifier 2 Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for UHF applications Parameter Test condition Symbol Min V(BR)DSS 15 Drain - source breakdown voltage ID = 10 µA, VG2S = VG1S = 0 Gate 1 - source breakdown voltage + IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS 7 ± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS 7 Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0 Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0 + IG1SS Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 100 kΩ IDSO 8 Typ. V 10 ± IG2SS 12 V 10 V 20 nA 20 nA 17 mA Gate 1 - source cut-off voltage VDS = 5 V, VG2S = 4, ID = 20 µA VG1S(OFF) 0.3 1.0 V Gate 2 - source cut-off voltage VDS = VRG1 = 5 V, RG1 =100 kΩ, ID = 20 µA VG2S(OFF) 0.3 1.2 V Document Number 85171 Rev. 1.2, 25-Aug-04 www.vishay.com 3 TSDF12830YS VISHAY Vishay Semiconductors Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified Amplifier 1 VDS = VRG1 = 5 V, VG2S = 4 V, Gate 1 = nc, ID = IDSP, f = 1 MHz, Tamb = 25 °C, unless otherwise specified Following data are valid for operating amplifier 1(pin 1, 3, 2, 5) which is optimized for VHF applications Symbol Min Typ. Max Unit Forward transadmittance Parameter Test condition |y21s| 23 28 33 mS Gate 1 input capacitance Cissg1 2.2 2.7 pF Crss 20 Feedback capacitance fF Coss 1.0 pF GS = 2 mS, BS = BSopt, GL = 0.5 mS, BL = BLopt, f = 200 MHz Gps 32 dB GS = 2 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 400 MHz Gps 28 dB GS = 3.3 mS, B S = BSopt, GL = 1 mS, BL = BLopt, f = 800 MHz Gps 22 dB AGC range VDS = 5 V, VG2S = 0.5 to 4 V, f = 200 MHz Gps 50 dB Noise figure GS = GL = 20 mS, BS = BL = 0, f = 50 MHz F 4.5 6.0 dB GS = 2 mS, GL = 1 mS, BS = BSopt, f = 400 MHz F 1.0 1.6 dB GS = 3.3 mS, GL = 1 mS, BS = BSopt, f = 800 MHz F 1.5 2.3 dB Output capacitance Power gain Cross modulation Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 90 dBµV Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 105 dBµV Remark on improving intermodulation behavior: By setting RG1 smaller than 56 kΩ, typical value of IDSO will raise and improved intermodulation behavior will be performed. www.vishay.com 4 Document Number 85171 Rev. 1.2, 25-Aug-04 TSDF12830YS VISHAY Vishay Semiconductors Amplifier 2 VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 100 kΩ, ID = IDSO, f = 1 MHz, Tamb = 25 °C, unless otherwise specified Following data are valid for operating amplifier 2 (pin 6, 4, 2, 5) which is optimized for UHF applications Symbol Min Typ. Max Unit Forward transadmittance Parameter Test condition |y21s| 27 31 35 mS Gate 1 input capacitance Cissg1 1.7 2.1 pF Crss 20 Feedback capacitance fF Coss 0.9 pF GS = 2 mS, BS = BSopt, GL = 0.5 mS, BL = BLopt, f = 200 MHz Gps 33 dB GS = 3.3 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 400 MHz Gps 30 dB GS = 3.3 mS, BS = BSopt, GL = 1 mS, BL = BLopt, f = 800 MHz Gps 25 dB AGC range VDS = 5 V, VG2S = 0.5 to 4 V, f = 800 MHz Gps 50 dB Noise figure GS = GL = 20 mS, BS = BL = 0, f = 50 MHz F 5.0 7.0 dB GS = 2 mS, GL = 0.5 mS, BS = BSopt, f = 400 MHz F 1.0 1.5 dB GS = 3.3 mS, GL = 1 mS, BS = BSopt, f = 800 MHz F 1.3 2.0 dB Output capacitance Power gain Cross modulation 40 Input level for k = 1 % @ 0 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 90 Input level for k = 1 % @ 40 dB AGC fw = 50 MHz, funw = 60 MHz Xmod 100 dBµV 105 dBµV Remark on improving intermodulation behavior: By setting RG1 smaller than 100 kΩ, typical value of IDSO will raise and improved intermodulation behavior will be performed. Document Number 85171 Rev. 1.2, 25-Aug-04 www.vishay.com 5 TSDF12830YS VISHAY Vishay Semiconductors Package Dimensions in mm (Inches) 1.00 (0.039) 0.80 (0.031) 0.10 (0.004) 0.25 (0.010) 0.10 (0.004) ISO Method E 10 Mounting Pad Layout 2.20 (0.087) 1.80 (0.071) 0.90 (0.035) 1.60 (0.063) 2.20 (0.087) 2.00 (0.079) 1.35 (0.053) 0.30 (0.012) 0.20 (0.009) 1.15 (0.045) 0.35 (0.014) 0.65 (0.026) Ref. 0.65 (0.026) 1.3 (0.052) www.vishay.com 6 1.30 (0.052) Ref. 14280 Document Number 85171 Rev. 1.2, 25-Aug-04 TSDF12830YS VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85171 Rev. 1.2, 25-Aug-04 www.vishay.com 7