HITTITE HMC121C8

HMC121C8
MICROWAVE CORPORATION
GaAs MMIC SMT VOLTAGE-VARIABLE ATTENUATOR DC - 10 GHz
FEBRUARY 2001
V03.0400
Features
General Description
WIDE BANDWIDTH: DC - 10 GHz
The HMC121C8 is an absorptive Voltage
Variable Attenuator (VVA) in a non-hermetic
surface-mount package covering DC - 10
GHz. It features an on-chip reference attenuator for use with an external op-amp to
provide simple single voltage attenuation
control, 0 to -3V. The device is ideal in
designs where an analog DC control signal
must control RF signal levels over a 25 dB
amplitude range. Applications include AGC
circuits and temperature compensation of
multiple gain stages in microwave point-topoint and VSAT radios. See HMC121G8
for a hermetic SMT version of this device.
LOW PHASE SHIFT VS. ATTENUATION
SMT ATTENUATORS
2
25 dB ATTENUATION RANGE
SIMPLIFIED VOLTAGE CONTROL
Guaranteed Performance, 50 ohm system, -55 to +85 deg C
Parameter
Min
Typical
Max
Units
2.0
2.2
3.5
2.5
3.2
4.5
dB
dB
dB
Inse rtion L oss
DC - 6 GHz :
DC - 8 GHz :
DC - 10 GHz :
Attenuation Range
DC - 6 GHz:
DC - 10 GHz :
20
25
25
30
dB
Return Loss
DC - 8 GHz:
DC - 10 GHz :
11
8
15
12
dB
dB
3
6
ns
ns
+3
-3
dBm
dBm
+18
+10
dBm
dBm
Switching Characteristics
tRISE, tFALL (10/90% RF):
tON, tOFF (50% CTL to 10/90% RF):
Input Power for 0.25 dB C ompre ssion
(0.5 - 10 GHz)
Min. Atten:
Atten. >2 dB:
Input Third Order Intercept (two - 8 dBm
signals, 0.5 - 10 GHz)
Min. Atten:
12 Elizabeth Drive, Chelmsford, MA 01824
2 - 14
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
HMC121C8
MICROWAVE CORPORATION
HMC121C8 SMT VOLTAGE-VARIABLE ATTENUATOR DC - 10 GHz
FEBRUARY 2001
V03.0400
Insertion Loss
Relative Attenuation
0
0
-2
-3
+85 C
-4
-10
6 dB
2
-30
2
4
6
8
10
12
0
2
4
FREQUENCY (GHz)
12 dB
6
8
10
12
25
30
25
30
FREQUENCY (GHz)
Relative Attenuation vs.
Control Voltage @ 4.2 GHz
Return Loss
0
0
V2
CONTROL VOLTAGE (Vdc)
-5
S11
RETURN LOSS (dB)
18 dB
-40
0
-10
-15
-20
-25
S22
-0.5
-1
-1.5
-2
-30
-2.5
-35
-3
V1
0
2
4
6
8
10
12
0
5
FREQUENCY (GHz)
10
15
Relative Attenuation vs.
Control Voltage @ 10 GHz
85
0
24 dB
75
V2
CONTROL VOLTAGE (Vdc)
21 dB
65
15 dB
55
20
RELATIVE ATTENUATION (dB)
Relative Phase
RELATIVE PHASE (DEG)
0 dB
-20
24 dB
-5
3 dB
9 dB
45
35
3 dB
25
15
5
-5
-0.5
-1
-1.5
-2
-2.5
V1
-3
0
2
4
6
8
10
12
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824
0
5
10
15
20
RELATIVE ATTENUATION (dB)
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
2 - 15
SMT ATTENUATORS
+25 C
ATTENUATION (dB)
INSERTION LOSS (dB)
-40 C
-1
HMC121C8
MICROWAVE CORPORATION
HMC121C8 SMT VOLTAGE-VARIABLE ATTENUATOR DC - 10 GHz
V03.0400
FEBRUARY 2001
Input Second Order
Intercept vs. Attenuation
SECOND ORDER INTERCEPT (dBm)
30
Reference
25
10 dB
20
15
6 dB
10
3 dB
5
0
1
2
3
4
5
6
7
8
9
60
Reference
3 dB
50
40
30
10 dB
6 dB
20
10
10
0
1
2
3
FREQUENCY (GHz)
4
5
6
7
8
9
10
8
9
10
FREQUENCY (GHz)
0.25 dB Compression
vs. Attenuation
1 dB Compression
vs. Attenuation
15
15
Reference
1 dB COMPRESSION (dBm)
0.25 dB COMPRESSION (dBm)
10
Reference
5
6 dB
0
-5
10
5
0
6 dB
-5
-10
-10
0
1
2
3
4
5
6
7
8
9
10
0
1
2
FREQUENCY (GHz)
3
4
5
6
7
FREQUENCY (GHz)
Second Harmonic vs. Attenuation
70
SECOND HARMONIC (dBc)
SMT ATTENUATORS
2
THIRD ORDER INTERCEPT (dBm)
Input Third Order
Intercept vs. Attenuation
3 dB
Reference
60
50
6 dB
40
10 dB
30
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824
2 - 16
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
HMC121C8
MICROWAVE CORPORATION
HMC121C8 SMT VOLTAGE-VARIABLE ATTENUATOR DC - 10 GHz
V03.0400
FEBRUARY 2001
Schematic
Absolute Maximum Ratings
50
50
RF1
RF Input
+16dBm
Control Voltage Range
+1.0 to -6.0 Vdc
Storage Temperature
-65 to +150 deg C
Operating Temperature
-55 to +85 deg C
RF2
500
500
500
V2 I
O V1
Outline Drawing
1.
2.
3.
4.
5.
12 Elizabeth Drive, Chelmsford, MA 01824
2
SMT ATTENUATORS
500
Phone: 978-250-3343
MATERIAL:
A) PACKAGE BODY & COVER : WHITE ALUMINA (92%)
B) LEADS & PACKAGE BOTTOM: COPPER
PLATING : ELECTROLYTIC GOLD 100 - 200 MICROINCHES
OVER ELECTROLYTIC NICKEL 100 TO 200 MICROINCHES.
DIMENSIONS ARE IN INCHES (MILLIMETERS).
UNLESS OTHERWISE SPECIFIED TOL. ARE ±0.005(±0.13).
ALL UNLABELED LEADS ARE GROUND. THESE LEADS ARE
CONNECTED INTERNALLY TO THE PACKAGED BOTTOM GROUND.
THE PACKAGE BOTTOM RF GROUND MUST BE SOLDERED TO
THE PCB RF GROUND.
PACKAGE LENGTH AND WIDTH DIMENSIONS SHOWN DO NOT INCLUDE
LID SEAL PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.005
(0.127MM) PER SIDE.
Fax: 978-250-3373
Web Site: www.hittite.com
2 - 17
HMC121C8
MICROWAVE CORPORATION
HMC121C8 SMT VOLTAGE-VARIABLE ATTENUATOR DC - 10 GHz
FEBRUARY 2001
V02.0400
Single-Line Control Driver
50
50
RF1
RF2
2
SMT ATTENUATORS
500
500
500
500
V2
I
O V1
CTL
+5V
500
1N4148
3.9K
500
3.9K
TL321
OR EQUIVALENT
-5V
External op-amp control circuit maintains impedance match while attenuation is varied. Input control ranges
from 0 Volts (min. attenuation) to -2.5 Volts (max. attenuation.)
12 Elizabeth Drive, Chelmsford, MA 01824
2 - 18
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
HMC121C8
MICROWAVE CORPORATION
HMC121C8 SMT VOLTAGE-VARIABLE ATTENUATOR DC - 10 GHz
FEBRUARY 2001
V02.0400
Evaluation PCB
SMT ATTENUATORS
2
The circuit board used in the final application should be generated with proper RF circuit design techniques.
Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom
ground should be connected directly to the ground plane similar to that shown above. The evaluation circuit
board shown above is available from Hittite Microwave Corporation upon request.
List of Material
Item
Description
J1 - J2
PC Mount SMA RF Connector
J3 - J7
DC PIN
U1
HMC121C8 VVA
PCB *
102084 Eval Board
* Circuit Board Material : Rogers 4350
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
2 - 19