DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2003 Jun 23 2004 May 27 Philips Semiconductors Product specification 60 V, 1 A PNP low VCEsat (BISS) transistor PBSS5160T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat SYMBOL • High collector current capability: IC and ICM PARAMETER MAX. UNIT VCEO collector-emitter voltage −60 V • High efficiency, reduces heat generation IC collector current (DC) −1 A • Reduces printed-circuit board area required ICM peak collector current −2 A • Cost effective replacement for medium power transistors BCP52 and BCX52. RCEsat equivalent on-resistance 330 mΩ PINNING APPLICATIONS PIN • Major application segments: – Automotive – Telecom infrastructure – Industrial. DESCRIPTION 1 base 2 emitter 3 collector • Power management: – DC-to-DC conversion handbook, halfpage 3 – Supply line switching. 3 • Peripheral driver: – Driver in low supply voltage applications (e.g. lamps and LEDs) 1 2 – Inductive load driver (e.g. relays, buzzers and motors). 1 Top view 2 MAM256 DESCRIPTION Fig.1 Simplified outline (SOT23) and symbol. PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4160T. MARKING MARKING CODE(1) TYPE NUMBER PBSS5160T U6* Note 1. * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China. ORDERING INFORMATION TYPE NUMBER PBSS5160T 2004 May 27 PACKAGE NAME − DESCRIPTION plastic surface mounted package; 3 leads 2 VERSION SOT23 Philips Semiconductors Product specification 60 V, 1 A PNP low VCEsat (BISS) transistor PBSS5160T LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −80 V VCEO collector-emitter voltage open base − −60 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) note 1 − −0.9 A note 2 − −1 A t = 1 ms or limited by Tj(max) − −2 A − −300 mA − −1 A note 1 − 270 mW note 2 − 400 mW notes 1 and 3 − 1.25 W ICM peak collector current IB base current (DC) IBM peak base current tp ≤ 300 µs; δ ≤ 0.02 Ptot total power dissipation Tamb ≤ 25 °C; Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad. 3. Operated under pulsed conditions: duty cycle δ ≤ 20 %, pulse width tp ≤ 10 ms. MLE128 500 handbook, halfpage Ptot (mW) 400 (1) 300 (2) 200 100 0 0 40 80 120 160 Tamb (°C) (1) Device mounted with 1 cm2 collector tab. (2) Device mounted on standard footprint. Fig.2 Power derating curves. 2004 May 27 3 Philips Semiconductors Product specification 60 V, 1 A PNP low VCEsat (BISS) transistor PBSS5160T THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT in free air; note 1 465 K/W in free air; note 2 312 K/W in free air; notes 1 and 3 100 K/W Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad. 3. Operated under pulsed conditions: duty cycle δ ≤ 20 %, pulse width tp ≤ 10 ms. MLE127 103 handbook, full pagewidth δ=1 Zth (K/W) 0.75 0.5 102 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 Mounted on printed-circuit board; standard footprint. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 May 27 4 tp (s) 103 Philips Semiconductors Product specification 60 V, 1 A PNP low VCEsat (BISS) transistor PBSS5160T CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS collector-base cut-off current ICBO MIN. TYP. MAX. UNIT VCB = −60 V; IE = 0 A − − −100 nA VCB = −60 V; IE = 0 A; Tj = 150 °C − − −50 µA VCE = −60 V; VBE = 0 V − − −100 nA nA ICES collector-emitter cut-off current IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A − − −100 hFE DC current gain VCE = −5 V; IC = −1 mA 200 350 − VCE = −5 V; IC = −500 mA; note 1 150 250 − VCEsat collector-emitter saturation voltage VCE = −5 V; IC = −1 A; note 1 100 160 − IC = −100 mA; IB = −1 mA − −110 −160 mV IC = −500 mA; IB = −50 mA − −120 −175 mV −330 mV IC = −1 A; IB = −100 mA; note 1 − −220 VBEsat base-emitter saturation voltage IC = −1 A; IB = −50 mA − −0.95 −1.1 V RCEsat equivalent on-resistance IC = −1 A; IB = −100 mA; note 1 − 220 mΩ VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A − −0.82 −0.9 fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz 150 220 − MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0 A; f = 1 MHz − 9 15 pF 330 Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. MLE124 600 MLE122 −1.2 handbook, halfpage handbook, halfpage VBE hFE (V) (1) (1) −0.8 400 (2) (2) (3) 200 −0.4 (3) 0 −10−1 −1 −10 −102 0 −10−1 −103 −104 IC (mA) −1 VCE = −5 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.4 Fig.5 DC current gain as a function of collector current; typical values. 2004 May 27 5 −10 −102 −103 −104 IC (mA) Base-emitter voltage as a function of collector current; typical values. V Philips Semiconductors Product specification 60 V, 1 A PNP low VCEsat (BISS) transistor PBSS5160T MLE126 −10 MLE119 −1 handbook, halfpage handbook, halfpage VCEsat VCEsat (V) (V) −10−1 −1 (2) −10−1 −10−2 (1) (3) (2) (1) (3) −10−2 −10−1 −1 −10 −102 −10−3 −10−1 −103 −104 IC (mA) −1 IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. MLE120 −10 −10 −102 −103 −104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values. MLE123 −1.2 handbook, halfpage handbook, halfpage VBEsat VCEsat (V) −1 (V) (1) −1 (2) −0.8 (3) −0.6 −10−1 (1) −0.4 (2) −10−2 −10−1 −1 −10 −102 −0.2 −10−1 −103 −104 IC (mA) −1 Tamb = 25 °C. (1) IC/IB = 100. (2) IC/IB = 50. IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.8 Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 May 27 6 −10 −102 −103 −104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification 60 V, 1 A PNP low VCEsat (BISS) transistor PBSS5160T MLE125 −2 IC (A) handbook, halfpage (6) (5) (4) (3) (2) MLE121 103 handbook, halfpage (1) RCEsat (Ω) −1.6 102 (7) −1.2 (8) 10 (9) −0.8 (10) 1 (1) −0.4 (2) 0 0 −1 −2 −3 (3) 10−1 −10−1 −4 −5 VCE (V) −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C. (1) IB = −40 mA. (2) IB = −36 mA. (3) IB = −32 mA. (4) IB = −28 mA. (5) IB = −24 mA. (6) IB = −20 mA. (7) IB = −16 mA. (8) IB = −12 mA. (9) IB = −8 mA. (10) IB = −4 mA. IC/IB = 20. (1) Tamb = 100 °C. (3) Tamb = −55 °C. Fig.11 Equivalent on-resistance as a function of collector current; typical values. Fig.10 Collector current as a function of collector-emitter voltage; typical values. 2004 May 27 (2) Tamb = 25 °C. 7 Philips Semiconductors Product specification 60 V, 1 A PNP low VCEsat (BISS) transistor PBSS5160T PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 May 27 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 8 Philips Semiconductors Product specification 60 V, 1 A PNP low VCEsat (BISS) transistor PBSS5160T DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 May 27 9 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA76 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp10 Date of release: 2004 May 27 Document order number: 9397 750 13284