IRF CPV363M4U

PD -5039
CPV363M4U
PRELIMINARY
IGBT SIP MODULE
UltraFast IGBT
1
Features
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
TM
• HEXFRED soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
3
Q1
D1
9
Q3
D3
4
6
Q2
D2
12
D5
Q5
15
10
Q4
D4
18
16
D6
Q6
Product Summary
7
13
Output Current in a Typical 20 kHz Motor Drive
7.1 ARMS per phase (2.1 kW total) with TC = 90°C, T J = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
19
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-2
Absolute Maximum Ratings
Parameter
VCES
I C @ T C = 25°C
I C @ T C = 100°C
I CM
I LM
I F @ TC = 100°C
I FM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
13
6.8
40
40
6.1
40
±20
2500
36
14
-40 to +150
V
A
V
VRMS
W
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
Typ.
Max.
–––
–––
0.10
20 (0.7)
3.5
5.5
–––
–––
Units
°C/W
g (oz)
12/30/96
CPV363M4U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Parameter
Min.
Collector-to-Emitter Breakdown Voltageƒ 600
Temperature Coeff. of Breakdown Voltage –––
Collector-to-Emitter Saturation Voltage –––
–––
–––
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance „
4.0
Zero Gate Voltage Collector Current
–––
–––
Diode Forward Voltage Drop
–––
–––
Gate-to-Emitter Leakage Current
–––
Typ.
–––
0.63
1.70
2.00
1.70
–––
-11
6.0
–––
–––
1.4
1.3
–––
Max. Units
Conditions
–––
V
VGE = 0V, IC = 250µA
––– V/°C VGE = 0V, IC = 1.0mA
2.2
IC = 6.8A
VGE = 15V
See Fig. 2, 5
–––
V
IC = 13A
–––
IC = 6.8A, TJ = 150°C
6.0
VCE = VGE , IC = 250µA
––– mV/°C VCE = VGE , IC = 250µA
–––
S
VCE = 100V, IC = 6.8A
250
µA
VGE = 0V, VCE = 600V
2500
VGE = 0V, VCE = 600V, TJ = 150°C
1.7
V
IC = 12A
See Fig. 13
1.6
IC = 12A, TJ = 150°C
±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Charge
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
53
7.7
21
43
14
95
83
0.17
0.15
0.32
41
16
110
230
0.52
1100
73
14
42
83
3.5
5.6
80
220
180
116
Max. Units
Conditions
79
IC = 6.8A
12
nC
VCC = 400V
31
See Fig. 8
–––
TJ = 25°C
–––
ns
IC = 6.8A, VCC = 480V
140
VGE = 15V, RG = 23Ω
190
Energy losses include "tail" and
–––
diode reverse recovery.
–––
mJ See Fig. 9, 10, 11, 18
0.45
–––
TJ = 150°C,
See Fig. 9, 10, 11, 18
–––
ns
IC = 6.8A, VCC = 480V
–––
VGE = 15V, RG = 23Ω
–––
Energy losses include "tail" and
–––
mJ diode reverse recovery.
–––
VGE = 0V
–––
pF
VCC = 30V
See Fig. 7
–––
ƒ = 1.0MHz
60
ns
TJ = 25°C See Fig.
14
IF = 12A
120
TJ = 125°C
6.0
A
TJ = 25°C See Fig.
15
VR = 200V
10
TJ = 125°C
180
nC
TJ = 25°C See Fig.
600
TJ = 125°C
16
di/dt =200Aµs
––– A/µs TJ = 25°C See Fig.
–––
TJ = 125°C
17
CPV363M4U
12
LOAD CURRENT (A)
10
2.92
8
2.33
6
1.75
4
1.17
2
0.58
Total Output Power (kW)
3.50
T c = 9 0° C
T j = 1 25 ° C
P ow er F ac tor = 0 .8
M o d ula tio n D ep th = 1 .15
V c c = 50 % o f R a ted V o lta g e
0.00
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
100
10
T J = 150°C
T J = 25°C
1
V G E = 15V
20µs PULSE WIDTH
0.1
0.1
1
V C E , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
A
10
T J = 150°C
10
T J = 25°C
1
V C C = 10V
5µs PULSE WIDTH
0.1
5
6
7
8
9
VG E , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
A
10
CPV363M4U
3.0
V G E = 15V
V CE, Collector-to-Emitter Voltage(V)
Maximum DC Collector Current (A)
14
12
10
8
6
4
2
A
0
25
50
75
100
125
I C =13.6A
2.0
I C = 6.8A
I C = 3.4A
1.0
-60 -40 -20
150
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
TC , Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
VGE = 15V
80 us PULSE WIDTH
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
T herm al R espon se (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
PD M
0 .1
0.02
0.01
t
SINGLE PULSE
( THE RMAL RES PO NSE)
t
Note s:
1. Du ty fac tor D = t
0.01
0.0000 1
1
1
/t
2
2
2. Pe ak TJ = P D M x Z th JC + T C
0.0001
0.001
0.0 1
0.1
1
t 1 , R e ct an gu la r P ulse D ura tion (s ec )
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
CPV363M4U
20
V GE
C ies
C res
C oes
1600
=
=
=
=
0V,
f = 1 MH z
C ge + C g c , C c e SH O R TED
C gc
C ce + C g c
V GE, Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
2000
C ie s
1200
C oes
800
C re s
400
16
12
8
4
A
0
1
10
0
0
100
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
10
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC = 480V
V GE = 15V
TJ = 25 °C
0.38 I C = 6.8A
0.36
0.34
0.32
0.30
24
36
48
RG , Gate Resistance (Ohm)
Ω
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
20
30
40
50
60
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.40
12
10
Q G, Total Gate Charge (nC)
V C E , C ollector-to-E m it ter V olt age (V )
0
VCC = 400V
I C = 6.8A
60
Ω
RG = 23Ohm
VGE = 15V
VCC = 480V
I C = 13.6A
1
I C = 6.8A
I C = 3.4A
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
° )
T J, Junction Temperature ( C
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
CPV363M4U
100
I C , Collector-to-Emitter Current (A)
Ω
RG = 23Ohm
T J = 150 °C
VCC = 480V
1.0
VGE = 15V
0.8
0.6
0.4
0.2
VGE = 20V
T J = 125 oC
10
1
SAFE OPERATING AREA
0.1
0.0
0
2
4
6
8
10
12
14
16
1
I C , Collector-to-emitter Current (A)
10
100
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
100
Insta ntane ous F o rward C urrent - I F (A )
Total Switching Losses (mJ)
1.2
TJ = 150 °C
10
TJ = 125 °C
TJ = 25 °C
1
0.4
1.4
2.4
F orwa rd V olta ge D rop - V FM (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
1000
CPV363M4U
100
160
VR = 2 0 0 V
T J = 1 2 5 °C
TJ = 2 5 ° C
VR = 2 0 0 V
TJ = 1 2 5 ° C
T J = 2 5 °C
120
I IR R M - (A )
t rr - (n s)
I F = 24A
I F = 12 A
80
I F = 6.0 A
I F = 2 4A
I F = 1 2A
10
IF = 6.0A
40
0
100
di f /d t - (A /µ s)
1
100
1000
1000
di f /dt - (A / µs)
Fig. 14 - Typical Reverse Recovery vs. di f/dt
Fig. 15 - Typical Recovery Current vs. dif /dt
10000
600
VR = 2 0 0 V
T J = 1 2 5 °C
TJ = 2 5 ° C
d i(rec)M /dt - (A /µs)
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
Q RR - (nC )
400
I F = 24 A
I F = 12A
200
1000
IF = 6 .0A
IF = 12A
100
IF = 24 A
IF = 6.0A
0
100
di f /d t - (A /µs)
Fig. 16 - Typical Stored Charge vs. di f/dt
1000
10
100
1000
di f /dt - (A /µ s)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
CPV363M4U
90% Vge
+ Vg e
Same t ype
device as
D.U.T.
V ce
Ic
90% Ic
10 % Vc e
Ic
5% Ic
430µF
80%
of Vce
D.U.T.
td (off)
tf
∫
E off =
t1 +5µ S
V ce ic d t
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon , Eoff(diode), t rr, Qrr, Irr, t d(on), t r, t d(off), t f
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G ATE VO LTA G E D .U .T.
1 0% +V g
trr
Q rr =
Ic
∫
trr
id dt
tx
+V g
tx
10% V cc
10 % Ir r
V cc
DUT V O LTA G E
AN D C URR E NT
V ce
Vcc
V pk
Irr
10% Ic
9 0% Ic
td( on)
tr
Ipk
Ic
DIO DE RE CO V E RY
W AV E FO RM S
5% Vc e
t1
∫
t2
E on = V c e ie dt
t1
t2
Er ec =
DIO D E RE V E RS E
RE C O V ER Y EN ER G Y
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon , td(on), tr
∫
t4
V d id d t
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Q rr, Irr
CPV363M4U
V g G ATE S IG N AL
DE VICE UNDE R TE S T
CURR EN T D .U .T.
VO L TA G E IN D.U.T.
CURR EN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
D.U.T.
L
10 00V
V c*
RL =
480V
4 X I C @25°C
0 - 480V
50V
60 00µ F
100 V
Figure 19. Clamped Inductive Load Test
Circuit
Figure 20. Pulsed Collector Current
Test Circuit
CPV363M4U
Notes:
 Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
‚ VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19)
ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
„ Pulse width 5.0µs, single shot.
Case Outline — IMS-2
3.91 ( .154)
2X
62.43 (2.458)
7.87 (.310)
53.85 (2.120)
5.46 ( .215)
21.97 (.865)
1
2
3 4
5
6
7
8
9 1 0 11 12 13 1 4 1 5 16 17 1 8 19
0.38 (.015)
NO TE S:
1. Tolerance unless otherwis e
s pec ified ± 0.254 (.010) .
2. Controlling Dimension: Inch.
3. Dim ens ions ar e shown in
M illim eter ( Inches).
4. Term inal numbers are shown
for refer enc e only.
3.94 (.155)
1.27 (.050)
4.06 ± 0.51
(.160 ± .020)
5.08 (.200)
6X
1.27 ( .050)
13X
2.54 (.100)
6X
3.05 ± 0.38
(.120 ± .015)
0.76 ( .030)
13X
0.51 (.020)
6.10 (.240)
IMS-2 Package Outline (13 Pins)
D im e n s io n s in M illim e te rs a n d (In c h e s )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
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IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
12/96