TM FQP6N80C/FQPF6N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. • • • • • • 5.5A, 800V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 21 nC) Low Crss ( typical 8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ G! G DS TO-220 TO-220F GD S FQP Series ▲ ● ● FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQP6N80C FQPF6N80C Units V 5.5 5.5 * A 3.2 3.2 * A 22 22 * A 800 - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 5.5 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 15.8 4.5 -55 to +150 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ± 30 V 680 mJ 158 1.27 51 0.41 * Drain current limited by maximum junction temperature. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W ©2003 Fairchild Semiconductor Corporation FQP6N80C 0.79 FQPF6N80C 2.45 Units °C/W Rev. A, June 2003 FQP6N80C/FQPF6N80C QFET Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 800 -- -- V -- 0.97 -- V/°C VDS = 800 V, VGS = 0 V -- -- 10 µA VDS = 640 V, TC = 125°C -- -- 100 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.75 A -- 2.1 2.5 Ω gFS Forward Transconductance VDS = 50 V, ID = 2.75 A -- 5.4 -- S -- 1010 1310 pF -- 90 115 pF -- 8 11 pF -- 26 60 ns -- 65 140 ns -- 47 105 ns -- 44 90 ns -- 21 30 nC (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 400 V, ID = 5.5 A, RG = 25 Ω (Note 4, 5) VDS = 640 V, ID = 5.5 A, VGS = 10 V (Note 4, 5) -- 6 -- nC -- 9 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 5.5 A ISM -- -- 22 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 5.5 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 615 -- ns Qrr Reverse Recovery Charge -- 5.4 -- µC VGS = 0 V, IS = 5.5 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 42mH, IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 5.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2003 Fairchild Semiconductor Corporation Rev. A, June 2003 FQP6N80C/FQPF6N80C Electrical Characteristics FQP6N80C/FQPF6N80C Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 -1 10 o 150 C 0 10 o -55 C o 25 C ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 50V 2. 250μ s Pulse Test -1 -2 10 10 -1 0 10 2 1 10 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 6 1 10 VGS = 10V IDR , Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 5 4 3 VGS = 20V 2 ※ Note : TJ = 25℃ 0 10 150℃ -1 1 10 0 3 6 9 12 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain voltage [V] ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 1500 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1200 VDS = 160V 10 VDS = 400V Ciss 900 Coss 600 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 300 Crss VGS, Gate-Source Voltage [V] Capacitance [pF] ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 25℃ VDS = 640V 8 6 4 2 ※ Note : ID = 6.0A 0 0 -1 10 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation 0 5 10 15 20 25 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A, June 2003 FQP6N80C/FQPF6N80C Typical Characteristics (Continued) 1.2 3.0 BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 0.0 -100 200 -50 0 100 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 8. On-Resistance Variation vs Temperature Figure 7. Breakdown Voltage Variation vs Temperature 2 102 10 Operation in This Area is Limited by R DS(on) Operation in This Area is Limited by R DS(on) DC 0 1 ms 10 ms 100 ms 10 ※ -1 10 Notes : o 1. TC = 25 C 101 100 µs 1 ms 10 ms 100 ms 0 DC -1 10 10 o o o 2. TJ = 150 C 3. Single Pulse -2 0 1 2 10 3 10 Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse 10 10 µs ※ 1 ID, Drain Current [A] 100 µs 10 10 50 o o ID, Drain Current [A] ※ Notes : 1. VGS = 10 V 2. ID = 3.0 A 0.5 10 10-2 100 101 102 103 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for FQP6N80C Figure 9-2. Maximum Safe Operating Area for FQPF6N80C 6 ID, Drain Current [A] 5 4 3 2 1 0 25 50 75 100 125 150 TC, Case Temperature [℃] Figure 10. Maximum Drain Current vs Case Temperature ©2003 Fairchild Semiconductor Corporation Rev. A, June 2003 (Continued) 0 D = 0 .5 0 .2 10 ※ N o te s : 1 . Z θ J C( t ) = 0 . 7 9 ℃ / W M a x . 2 . D u ty F a c t o r , D = t 1 / t 2 3 . T J M - T C = P D M * Z θ J C( t ) -1 0 .1 0 .0 5 PDM 0 .0 2 θ JC (t), T h e rm a l R e s p o n s e 10 FQP6N80C/FQPF6N80C Typical Characteristics 0 .0 1 t1 Z s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] 10 D = 0 .5 0 0 .2 ※ N o te s : 1 . Z θ J C( t ) = 2 . 4 5 ℃ / W M a x . 2 . D u ty F a c to r , D = t1 /t2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .1 0 .0 5 10 -1 0 .0 2 PDM 0 .0 1 θ JC (t), T h e rm a l R e s p o n s e Figure 11-1. Transient Thermal Response Curve for FQP6N80C Z t1 t2 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF6N80C ©2003 Fairchild Semiconductor Corporation Rev. A, June 2003 FQP6N80C/FQPF6N80C Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2003 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Time Rev. A, June 2003 FQP6N80C/FQPF6N80C Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2003 Fairchild Semiconductor Corporation Rev. A, June 2003 TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. A, June 2003 FQP6N80C/FQPF6N80C Package Dimensions (Continued) 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. A, June 2003 FQP6N80C/FQPF6N80C Package Dimensions TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2003 Fairchild Semiconductor Corporation Rev. I2