DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114TE NPN resistor-equipped transistor Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TE FEATURES • Built-in bias resistor R1 (typ. 10 kΩ) • Simplification of circuit design • Reduces number of components and board space. 3 handbook, 4 columns 3 R1 1 APPLICATIONS 2 1 • Especially suitable for space reduction in interface and driver circuits 2 Top view MAM347 • Inverter circuit configurations without use of an external resistor. Fig.1 Simplified outline (SC-75; SOT416) and symbol. DESCRIPTION NPN resistor-equipped transistor in an SC-75; SOT416 plastic package. PNP complement: PDTA114TE. MARKING 1 PINNING 2 PIN DESCRIPTION 1 base/input 2 emitter/ground 3 collector/output TYPE NUMBER 3 MARKING CODE PDTC114TE 24 MGA893 - 1 Fig.2 Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT − − 50 V output current (DC) − − 100 mA peak collector current − − 100 mA Tamb ≤ 25 °C − − 150 mW IC = 1 mA; VCE = 5 V 200 − − 7 10 13 VCEO collector-emitter voltage IO ICM Ptot total power dissipation hFE DC current gain R1 input resistor 1998 Aug 03 open base 2 kΩ Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 5 V IO output current (DC) − 100 mA ICM peak collector current − 100 mA Ptot total power dissipation − 150 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 833 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER ICBO collector cut-off current ICEO collector cut-off current CONDITIONS IE = 0; VCB = 50 V MIN. − TYP. − MAX. 100 UNIT nA IB = 0; VCE = 30 V − − 1 µA IB = 0; VCE = 30 V; Tj = 150 °C − − 50 µA − − 100 nA IEBO emitter cut-off current IC = 0; VEB = 5 V hFE DC current gain IC = 1 mA; VCE = 5 V 200 − − VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − − 150 mV R1 input resistor 7 10 13 kΩ Cc collector capacitance − − 2.5 pF 1998 Aug 03 IE = ie = 0; VCB = 10 V; f = 1 MHz 3 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TE MGM902 MGM901 10−1 handbook, halfpage 600 handbook, halfpage (1) (2) (3) (1) hFE VCEsat (V) 400 (2) (3) 200 0 10−1 1 10 IC (mA) 10−2 10−1 102 VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.3 Fig.4 DC current gain as a function of collector current; typical values. 1998 Aug 03 4 1 10 IC (mA) 102 Collector-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TE PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT416 1998 Aug 03 REFERENCES IEC JEDEC EIAJ SC-75 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TE DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Aug 03 6 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TE NOTES 1998 Aug 03 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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