Si4719CY Vishay Siliconix Battery Disconnect Switch Solution for Bi-Directional Blocking Bi-Directional Conduction Switch 6- to 30-V Operation Ground Referenced Logic Level Inputs Integrated Low rDS(on) MOSFET Level-Shifted Gate Drive with Internal MOSFET Two Independent Inputs Includes Precision Voltage Circuitry Ultra Low Power Consumption in Off State (Leakage Current Only) Logic Supply Voltage is Not Required The Si4719CY is two level-shifted p-channel MOSFETs. Operating together, these MOSFETs can be used as a reverse blocking switch for battery disconnect applications. It is a solution for multiple battery technology designs or designs that require isolation from the power bus during charging. The Si4719CY is available in a 16-pin SOIC package and is rated for the commercial temperature range of –25 to 85C. IN1 5 9, 10, 11 ESD GND1 G1 Logic and Gate Drive D1 Level Shift 12 6 VGS Limiter 7, 8 S1 Half a circuit shown here. Document Number: 70669 S-59510—Rev. B, 31-Aug-98 www.vishay.com FaxBack 408-970-5600 2-1 Si4719CY Vishay Siliconix Voltage Referenced to GND VS, VDa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 32 V VSD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 30 V VIN1, VIN2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 15 V VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 V Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150C Power Dissipationb (t = 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4 W (t = steady state) . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 W Notes a. VSD ≤ 30 VDC b. Device mounted with all leads soldered to 1” x 1” FR4 with laminated copper PC board. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V to 30 V VIN1, VIN2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 13.2 V IDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 A to 6 A Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 to 85C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 to 150C Limits P Parameter On-Resistance Leakage Current 0.040 VS = 10 V, ID = 1 A, VIN = H Room VDS = 10 V Room 1 Room 1 VINL VINH IINH IN t D or S to 0.028 rDS Input Voltage High Turn-Off Delay Unit IDS(off) Input Voltage Low Turn-On Delay Maxb Tempa IS GND(on) Input Current Typc S Specific ifi T Test Conditions C di i IS GND(off) Power Consumption Minb S b l Symbol tON(IN) tOFF(IN) VS = 21 V Room VS = 10 V and VS = 21 V VIN = 5.0 V VS = 10 V, RL = 5 , Test Circuit 1 1.0 Full Full Room 10 3.3 4.5 Room 2.2 A A 25 50 2.9 10 2 Room 1.15 Break-Before-Maked tBBM Room 1.15 Rise Time tRISE Room 0,73 1.4 Fall Time tFALL Room 24 50 Voltage Across Pin 6 and 7 VGS VS = 30 V Room 10.2 18 Forward Diode VSD ID = –1 A Room V A s ns V 1.1 Notes a. Room = 25C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production testing. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70669 S-59510—Rev. B, 31-Aug-98 Si4719CY Vishay Siliconix 10 V SOURCE 50% 50% VIN 0V 90% DRAIN VD 5 90% 10% tON(IN) 10% tOFF(IN) tr tf TEST CIRCUIT 1 SO-16 D2 1 16 S2 D2 2 15 S2 D2 3 14 G2(OUT) GND2 4 13 IN1 5 G1(OUT) VIN1 VIN2 Switch 1 Switch 2 IN2 0 0 Off Off 12 GND1 0 1 Off On 6 11 D1 1 0 On Off S1 7 10 D1 1 1 On On S1 8 9 D1 Top View Order Number: Si4719CY Pin Number Symbol 1, 2, 3 D2 4, 12 GND 5 IN1 6 G1(OUT) Description Drain connection for MOSFET-2. Ground Logic input, IN1. High level turns on the switch. Gate output to MOSFET-1. 7, 8 S1 Source connection for MOSFET-1 9, 10, 11 D1 Drain connection for MOSFET-1. 13 IN2 Logic input, IN2. High level turns on the switch. 14 G2(OUT) 15, 16 S2 Document Number: 70669 S-59510—Rev. B, 31-Aug-98 Gate output to MOSFET-2. Source connection for MOSFET-2. www.vishay.com FaxBack 408-970-5600 2-3 Si4719CY Vishay Siliconix On-Resistance vs. Drain Current On-Resistance vs. Source Voltage 0.10 r DS(on) – Drain-Source On-Resistance ( ) r DS(on) – Drain-Source On-Resistance ( ) 0.050 0.040 VS = 10 V 0.030 0.020 0.010 0.08 0.06 0.04 IS = 1 A 0.02 0 0.000 0 1 2 3 4 5 0 6 3 6 9 Normalized On-Resistance vs. Junction Temperature 18 21 1200 VS = 10 V IS = 1 A 900 1.4 1.2 C OSS (pF) r DS(on) – On-Resistance ( ) (Normalized) 15 Output Capacitance vs. Source Voltage 1.8 1.6 12 VS (V) IS (A) 1.0 600 VIN = 0 V 0.8 300 0.6 0.4 –50 0 –25 0 25 50 75 100 125 150 0 5 10 TJ – Junction Temperature (C) 10.000 15 20 25 30 VS (V) On-Supply Current vs. Source Voltage Off-Supply Current vs. Source Voltage 10.000 TJ = 150C TJ = 150C 1.000 1.000 I S ( A) I S ( A) TJ = 25C 0.100 TJ = 25C 0.010 0.001 0 5 10 15 VS (V) www.vishay.com FaxBack 408-970-5600 2-4 0.100 0.010 20 25 30 0.001 0 5 10 15 20 25 30 VS (V) Document Number: 70669 S-59510—Rev. B, 31-Aug-98 Si4719CY Vishay Siliconix Input Voltage Trip Point vs. Temperature Drain-Source Diode Forward Voltage 10 4.30 4.25 VS = 21 V 4.20 V IN Trip Point I S – Source Current (A) TJ = 150C TJ = 25C VS = 10 V 4.15 4.10 4.05 4.0 1 0 0.2 0.4 0.6 0.8 1.0 1.2 –50 1.4 –25 VSD – Source-to-Drain Voltage (V) Turn-On Delay vs. Temperature 75 100 125 150 125 150 125 150 Turn-off Delay vs. Temperature VS = 10 V Rl = 5 3.6 1.4 3.2 1.2 t d(on) (s) t d(on) (s) 50 1.6 VS = 10 V Rl = 5 2.8 2.4 1.0 0.8 2.0 0.6 –25 0 25 50 75 100 125 150 –50 –25 0 Temperature (C) 25 50 75 100 Temperature (C) Rise Time vs. Temperature Fall Time vs. Temperature 32 1.0 0.9 25 TA = Ambient Temperature (C) 4.0 –50 0 VS = 10 V Rl = 5 30 VS = 10 V Rl = 5 0.8 t fall (ns) t rise (s) 28 0.7 26 24 22 0.6 20 0.5 –50 18 –25 0 25 50 75 Temperature (C) Document Number: 70669 S-59510—Rev. B, 31-Aug-98 100 125 150 –50 –25 0 25 50 75 100 Temperature (C) www.vishay.com FaxBack 408-970-5600 2-5 Si4719CY Vishay Siliconix Single Pulse Power 40 Power (W) 30 20 10 0 0.01 1 0.1 10 100 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 83.3C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 10–4 4. Surface Mounted 10–3 10–2 10–1 1 10 100 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-6 Document Number: 70669 S-59510—Rev. B, 31-Aug-98 Si4719CY Vishay Siliconix Si4719CY Si4435DY D1 S1 Battery 1 G1 Drive Logic In 1 Si4435DY D2 S2 DC/DC Battery 2 G2 Drive Logic In 2 FIGURE 1 S1 S2 G1 G2 Drive Si4719CY D1 Drive D2 Logic In Battery 2 DC/DC S1 Si4719CY G1 S2 Drive D1 Battery 1 G2 Drive D2 Logic In FIGURE 2 Document Number: 70669 S-59510—Rev. B, 31-Aug-98 www.vishay.com FaxBack 408-970-5600 2-7 Si4719CY Vishay Siliconix 1/2 Si4719 AC/DC 1/2 Si4719 Display Power Charger Logic In 7 – 30 V 3 – 5 Cell Li-Ion Logic In Drive Drive 5V 3.3 V DC/DC FIGURE 3: Low-Cost Laptop PC 1/2 Si4719 1/2 Si4719 Display Power AC/DC Charger Logic In Logic In Drive Drive DC/DC 1/2 Si4719 7 – 30 V 3 – 5 Cell Li-Ion 5V 3.3 V 1/2 Si4719 Si6415 Logic In 7 – 30 V 3 – 5 Cell Li-Ion Drive Logic In 1/2 Si4719 Drive 1/2 Si4719 Si6415 Logic In Drive Logic In Drive FIGURE 4: High-Performance Laptop PC www.vishay.com FaxBack 408-970-5600 2-8 Document Number: 70669 S-59510—Rev. B, 31-Aug-98