DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-90 UHF power LDMOS transistor Product specification Supersedes data of 2002 Sep 09 2003 Feb 24 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 FEATURES PINNING - SOT502A • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 750 mA: PIN – Output power = 11.5 W (AV) – Gain = 12.5 dB DESCRIPTION 1 drain 2 gate 3 source, connected to flange – Efficiency = 20% – ACPR = −42 dBc at 3.84 MHz – dim = −36 dBc • Easy power control • Excellent ruggedness handbook, halfpage • High power gain 1 • Excellent thermal stability • Designed for broadband operation (2000 to 2200 MHz) 3 2 • Internally matched for ease of use. Top view MBK394 APPLICATIONS • RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range. Fig.1 Simplified outline. DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. QUICK REFERENCE DATA Typical RF performance at Th = 25 °C in a common source class-AB test circuit. MODE OF OPERATION 2-tone, class-AB W-CDMA, 3GPP test model 1, 64 channels with 66% clipping f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) dim (dBc) ACLR5 (dBc) f1 = 2170; f2 = 2170.1 28 750 90 (PEP) 12.8 35.7 −28.5 − 2140 28 750 15 (AV) 13.2 20 − −40 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2003 Feb 24 2 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage − ±15 V ID DC drain current − 12 A Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-c thermal resistance from junction to case Th = 25 °C; note 1 0.65 K/W Rth c-h thermal resistance from case to heatsink Th = 25 °C; note 2 0.2 K/W Notes 1. Thermal resistance is determined under specified RF operating conditions. 2. Depending on mounting conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 2.1 mA 65 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 210 mA 4.4 − 5.5 V IDSS drain-source leakage current VGS = 0; VDS = 26 V − − 15 µA IDSX on-state drain current VGS = VGSth + 9 V; VDS = 10 V 27 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 38 nA gfs forward transconductance VDS = 10 V; ID = 7.5 A − 6.2 − S RDSon drain-source on-state resistance VGS = VGSth + 9 V; ID = 7.5 A − 0.1 − Ω Crs feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 5.1 − pF APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth j-c = 0.65 K/W; unless otherwise specified. MODE OF OPERATION 2-tone, class-AB f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) dim (dBc) f1 = 2170; f2 = 2170.1 28 750 90 (PEP) >11 >30 ≤−25 Ruggedness in class-AB operation The BLF2022-90 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDQ = 750 mA; PL = 90 W (CW); f = 2170 MHz. 2003 Feb 24 3 Philips Semiconductors Product specification UHF power LDMOS transistor MLD837 15 Gp handbook, halfpage (dB) 14 ηD BLF2022-90 50 ηD MLD838 0 handbook, halfpage dim (dBc) (%) 40 −20 d3 13 Gp 30 d5 −40 d7 12 20 11 10 −60 10 0 40 80 −80 0 120 PL (PEP) (W) VDS = 28 V; IDQ = 750 mA; Th = 25 °C; f1 = 2170 MHz; f2 = 2170.1 MHz. Fig.2 40 80 120 PL (PEP) (W) VDS = 28 V; IDQ = 750 mA; Th = 25 °C; f1 = 2170 MHz; f2 = 2170.1 MHz. Power gain and drain efficiency as functions of peak envelope load power; typical values. MLD839 15 Gp handbook, halfpage (dB) 14 ηD Gp 0 Fig.3 50 ηD Intermodulation distortion as a function of peak envelope load power; typical values. MLD840 0 handbook, halfpage dim (dBc) (%) 40 −20 (1) (2) 13 (3) 30 (4) (1) −40 (5) (6) 12 20 11 10 (2) (3) −60 10 0 40 80 −80 0 120 PL (PEP) (W) VDS = 28 V; Th = 25 °C; f1 = 2170 MHz; f2 = 2170.1 MHz. (1) IDQ = 900 mA. (2) IDQ = 750 mA. Fig.4 (3) IDQ = 600 mA. (4) IDQ = 600 mA. 40 80 120 PL (PEP) (W) VDS = 28 V; Th = 25 °C; f1 = 2170 MHz; f2 = 2170.1 MHz. (5) IDQ = 750 mA. (6) IDQ = 900 mA. (1) IDQ = 600 mA. Power gain and drain efficiency as functions of peak envelope load power; typical values. 2003 Feb 24 0 Fig.5 4 (2) IDQ = 900 mA. (3) IDQ = 750 mA. Third order intermodulation distortion as a function of peak envelope load power; typical values. Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 MLD833 15 Gp Gp ηD (dB) (%) MLD834 0 30 handbook, halfpage handbook, halfpage ACLR (dBc) −20 10 20 −40 ACLR5 5 10 −60 ACLR10 ηD 0 25 30 35 −80 0 40 45 PL(AV) (dBm) Single carrier W-CDMA performance. VDS = 28 V; IDQ = 750 mA; Th = 25 °C; f = 2140 MHz. Input signal: 3GPP W-CDMA 1-64DPCH with 66% clipping; peak to average power ratio: 8.5 dB at 0.01% probability on CCDF; channel spacing/bandwidth = 5 MHz / 3.84 MHz. Measured in a W-CDMA application circuit. Power gain and drain efficiency as functions of average load power; typical values. 2003 Feb 24 30 35 45 40 PL(AV) (dBm) Single carrier W-CDMA performance. VDS = 28 V; IDQ = 750 mA; Th = 25 °C; f = 2140 MHz. Input signal: 3GPP W-CDMA 1-64DPCH with 66% clipping; peak to average power ratio: 8.5 dB at 0.01% probability on CCDF; channel spacing/bandwidth = 5 MHz / 3.84 MHz. Measured in a W-CDMA application circuit. Fig.7 Fig.6 25 5 Adjacent channel leakage ratio (ACLR5 and ACLR10) as function of average load power; typical values. Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 MLD835 4 MLD836 4 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) 3 2 RL xi 2 0 −2 1 ri 0 1.8 XL 1.9 2.1 2 −4 1.8 2.2 2.3 f (GHz) 1.9 2.3 2.2 f (GHz) 2.1 2 VDS = 28 V; ID = 750 mA; PL = 90 W; Th = 25 °C. VDS = 28 V; ID = 750 mA; PL = 90 W; Th = 25 °C. Fig.8 Fig.9 Input impedance as a function of frequency (series components); typical values. Load impedance as a function of frequency (series components); typical values. F1 handbook, full pagewidth R2 R1 VDD Vgate C10 C5 C11 C12 C13 C14 L13 L4 C9 C4 L11 L10 L6 L15 L2 input 50 Ω L17 L8 C8 C3 L20 L1 L3 C2 L5 L7 L12 L9 L14 L16 C6 C1 L18 L19 output 50 Ω C7 MGS920 Fig.10 Class-AB test circuit at f = 2.2 GHz. 2003 Feb 24 6 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 List of components (See Figs 10 and 11) COMPONENT DESCRIPTION VALUE C1, C2, C6, C7 Tekelec variable capacitor; type 37281 DIMENSIONS CATALOGUE NO. 0.4 to 2.5 pF C3, C8 multilayer ceramic chip capacitor; note 1 12 pF C4, C9 multilayer ceramic chip capacitor; note 2 12 pF C5, C12 electrolytic capacitor C10 multilayer ceramic chip capacitor; note 1 1 nF C11 multilayer ceramic chip capacitor 10 µF; 100 V 2222 037 59109 100 nF C13 tantalum SMD capacitor 4.5 µF; 50 V C14 electrolytic capacitor 100 µF; 63 V F1 Ferroxcube chip-bead 8DS3/3/8/9-4S2 2222 581 16641 2222 037 58101 4330 030 36301 L1 stripline; note 3 50 Ω 2.9 × 2.4 mm L2 stripline; note 3 14.5 Ω 4 × 11.7 mm L3 stripline; note 3 50 Ω 3.7 × 2.4 mm L4 stripline; note 3 6Ω 2 × 30.8 mm L5 stripline; note 3 50 Ω 3.6 × 2.4 mm L6 stripline; note 3 9.5 Ω 3 × 18.8 mm L7 stripline; note 3 50 Ω 7.8 × 2.4 mm L8 stripline; note 3 9.8 Ω 4 × 18.3 mm L9 stripline; note 3 24.4 Ω 5 × 6.3 mm L10, L11 stripline; note 3 5.1 Ω 7 × 37 mm L12 stripline; note 3 25.4 Ω 10.1 × 6 mm L13 stripline; note 3 5.7 Ω 2.4 × 32.8 mm L14 stripline; note 3 25.4 Ω 7.4 × 6 mm L15 stripline; note 3 11.3 Ω 2.5 × 15.6 mm L16 stripline; note 3 50 Ω 10.8 × 2.4 mm L17 stripline; note 3 16.1 Ω 3 × 10.4 mm L18 stripline; note 3 50 Ω 2.3 × 2.4 mm L19 stripline; note 3 50 Ω 3 × 2.4 mm L20 stripline; note 3 50 Ω 5.5 × 2.4 mm R1, R2 metal film resistor 10 Ω, 0.6 W 2322 156 11009 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr = 2.2); thickness 0.79 mm. 2003 Feb 24 7 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 50 handbook, full pagewidth 50 95 INPUT OUTPUT PH990109 PH990110 VDD VGS R2 C14 C13 C5 R1 F1 C12 C11 C10 C9 C4 C8 C3 C2 C1 C6 C7 INPUT OUTPUT PH990109 PH990110 MGU538 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.79 mm. The other side is unetched and serves as a ground plane. Fig.11 Component layout for 2.2 GHz class-AB test circuit. 2003 Feb 24 8 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 PACKAGE OUTLINE Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION D E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D1 0.045 0.785 0.035 0.745 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A 2003 Feb 24 0.210 0.133 0.170 0.123 9 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Feb 24 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2022-90 NOTES 2003 Feb 24 11 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/03/pp12 Date of release: 2003 Feb 24 Document order number: 9397 750 10923