IRF IRG4IBC10UD

PD - 93765
IRG4IBC10UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UltraFast Co-Pack IGBT
C
VCES = 600V
Features
• UltraFast: Optimized for high operating up to
80 kHz in hard switching, > 200 kHz in
resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFRED® ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard TO-220 Full-Pak
VCE(on) typ. = 2.15V
G
@VGE = 15V, IC = 5.0A
E
tf(typ.) = 140ns
N-channel
Benefits
• Generation 4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• HEXFRED® diodes optimized for performance with IGBTs
Minimized recovery characteristics require less/no snubbing
TO-220 Full-Pak
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VISOL
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolated Voltage, Terminal to case, t=1min
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec
Mounting Torque, 6-32 or M3 Screw
Max.
Units
600
6.8
3.9
27
27
3.9
27
2500
± 20
25
10
-55 to +150
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RθJC
RθJC
RθJA
Wt
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Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
–––
–––
2.1 (0.075)
5.0
9.0
65
–––
Units
°C/W
g (oz)
1
10/27/99
IRG4IBC10UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
DV(BR)CES/DTJ
VCE(on)
VGE(th)
DVGE(th)/DTJ
gfe
ICES
VFM
IGES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage ƒ 600 —
Temperature Coeff. of Breakdown Voltage — 0.54
Collector-to-Emitter Saturation Voltage
— 2.15
— 2.61
— 2.30
Gate Threshold Voltage „
3.0
—
Temperature Coeff. of Threshold Voltage
— -8.7
Forward Transconductance
2.8 4.2
Zero Gate Voltage Collector Current
—
—
—
—
Diode Forward Voltage Drop
—
1.5
—
1.4
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
—
V/°C VGE = 0V, I C = 1.0mA
2.6
IC = 5.0A
VGE = 15V
See Fig. 2, 5
—
V
IC = 8.5A
—
IC = 5.0A, TJ = 150°C
6.0
VCE = VGE, I C = 250µA
— mV/°C VCE = VGE, I C = 250µA
—
S
VCE = 100V, IC = 5.0A
250
µA
VGE = 0V, V CE = 600V
1000
VGE = 0V, VCE = 600V, TJ = 150°C
1.8
V
IC = 4.0A
See Fig. 13
1.7
IC = 4.0A, TJ = 125°C
±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Q gc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
t rr
I rr
Q rr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Diode Peak Reverse Recovery Current —
—
Diode Reverse Recovery Charge
—
—
Diode Peak Rate of Fall of Recovery
—
During tb
—
Typ.
15
2.6
5.8
40
16
87
140
0.14
0.12
0.26
38
18
95
250
0.45
7.5
270
21
3.5
28
38
2.9
3.7
40
70
280
235
Max. Units
Conditions
22
IC = 5.0A
4.0
nC VCC = 400V
See Fig. 8
8.7
VGE = 15V
—
TJ = 25°C
—
ns
IC = 5.0A, VCC = 480V
130
VGE = 15V, RG = 100W
210
Energy losses include "tail" and
—
diode reverse recovery.
—
mJ See Fig. 9, 10, 18
0.33
—
TJ = 150°C, See Fig. 11, 18
—
ns
IC = 5.0A, VCC = 480V
—
VGE = 15V, RG = 100W
—
Energy losses include "tail" and
—
mJ diode reverse recovery.
—
nH Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
42
ns
TJ = 25°C See Fig.
57
TJ = 125°C
14
IF = 4.0A
5.2
A
TJ = 25°C See Fig.
6.7
TJ = 125°C
15
VR = 200V
60
nC TJ = 25°C See Fig.
105
TJ = 125°C
16
di/dt = 200A/µs
—
A/µs TJ = 25°C See Fig.
—
TJ = 125°C
17
Details of note  through „ are on the last page
2
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IRG4IBC10UD
6.0
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 7.0W
Load Current ( A )
5.0
4.0
Square w ave:
60% of rated
voltage
3.0
2.0
Ideal diodes
1.0
0.0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 oC
TJ = 150 oC
10
1
V GE = 15V
20µs PULSE WIDTH
0.1
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
100
10
TJ = 150 o C
TJ = 25 o C
V CC = 50V
5µs PULSE WIDTH
1
5
6
7
8
9
10
11
12
13
14
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4IBC10UD
5.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
8
6
4
2
0
25
50
75
100
125
150
VGE = 15V
80 us PULSE WIDTH
IC = 10 A
4.0
3.0
IC =
IC = 2.5 A
2.0
1.0
-60 -40 -20
TC , Case Temperature ( °C)
5A
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response ( Z thJC )
10
D = 0.50
0.20
1
0.10
0.05
PDM
0.02
0.01
0.1
t
SINGLE PULSE
( THERMAL RESPONSE )
1
t2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak TJ = P D Mx Z thJC + T C
0.01
1E-005
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4IBC10UD
500
VGE , Gate-to-Emitter Voltage (V)
400
C, Capacitance (pF)
20
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
300
200
Coes
100
VCC = 400V
I C = 5.0A
16
12
8
4
Cres
0
0
1
10
100
0
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
10
V CC = 480V
V GE = 15V
TJ = 25 ° C
I C = 5.0A
0.25
0.20
50
60
70
80
90
100
RG , Gate Resistance (Ohm)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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8
12
16
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
0.30
4
QG , Total Gate Charge (nC)
Ω
RG =100
Ohm
VGE = 15V
VCC = 480V
IC = 10 A
1
IC = 5.0A
5A
IC = 2.5 A
0.1
0.01
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4IBC10UD
RG
TJ
1.2 VCC
VGE
100
= 100Ω
Ohm
= 150 ° C
= 480V
= 15V
I C, Collector Current (A)
Total Switching Losses (mJ)
1.4
1.0
0.8
0.6
0.4
VGE = 20V
T J = 125 o C
10
0.2
SAFE OPERATING AREA
1
0.0
0
2
4
6
8
1
10
10
100
1000
VCE, Collector-to-Emitter Voltage (V)
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current ( A )
100
TJ = 150°C
10
TJ = 125°C
T = 25°C
J
1
0.1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
F orward V oltage D rop - VVFMF(V)
M(V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4IBC10UD
14
50
I F = 8.0A
45
12
I F = 4.0A
VR = 20 0V
T J = 1 25 °C
T J = 2 5°C
I F = 8.0A
10
I F = 4.0A
Irr- ( A)
trr- (nC)
40
35
8
6
30
4
25
2
VR = 2 00 V
T J = 1 2 5°C
T J = 2 5 °C
20
100
di f /dt - (A/µ s)
0
100
1000
1000
di f /dt - (A/µ s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
1000
200
VR = 20 0V
T J = 1 25 °C
T J = 2 5°C
VR = 2 00 V
T J = 1 25°C
T J = 2 5°C
160
I F = 8.0A
I F = 4.0A
Qrr- (nC)
120
di (rec) M/dt- (A /µs)
I F = 8.0A
80
I F = 4.0A
40
0
100
di f /dt - (A/µ s)
1000
Fig. 16 - Typical Stored Charge vs. dif/dt
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A
100
100
1000
di f /dt - (A/µ s )
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
7
IRG4IBC10UD
90% Vge
Same ty pe
device as
D .U.T.
+Vge
V ce
430µF
80%
of Vce
D .U .T.
Ic
9 0 % Ic
10% Vce
Ic
5 % Ic
td (o ff)
tf
E o ff =
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
∫
t1 + 5 µ S
V c e icIcd tdt
Vce
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T .
1 0 % +V g
trr
Q rr =
Ic
∫
trr
id
t
Ic ddt
tx
+Vg
tx
10% Vcc
1 0 % Irr
V cc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
Vcc
1 0 % Ic
Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
tr
td (o n )
5% Vce
t1
∫
t2
ce ieIcd t dt
E on = V
Vce
t1
t2
E re c =
D IO D E R E V E R S E
REC OVERY ENER GY
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
∫
t4
VVc
d idIcd t dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4IBC10UD
V g G A T E S IG N A L
D E V IC E U N D E R T E S T
C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Fig. 18e - Macro Waveforms for Figure 18a's Test Circuit
D.U.T.
L
1000V
Vc*
RL=
480V
4 X IC @25°C
0 - 480V
50V
6000µ F
100 V
Fig. 19 - Clamped Inductive Load Test Circuit
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Fig. 20 - Pulsed Collector Current
Test Circuit
9
IRG4IBC10UD
TO-220 Full-Pak Package Outline
1 0 .6 0 (.4 1 7 )
1 0 .4 0 (.4 0 9 )
ø
3 .4 0 (.1 3 3 )
3 .1 0 (.1 2 3 )
4 .8 0 (.1 8 9 )
4 .6 0 (.1 8 1 )
-A 3 .7 0 (.1 4 5 )
3 .2 0 (.1 2 6 )
1 6 .0 0 (.6 3 0 )
1 5 .8 0 (.6 2 2 )
2 .8 0 (.1 1 0 )
2 .6 0 (.1 0 2 )
L E A D ALEAD
S S IG N
ME NTS
ASSIGMENTS
1 - G1-A GATE
TE
2 - D2-R COLLECTOR
A IN
3 - S3O EMITTER
URCE
7 .1 0 (.2 8 0 )
6 .7 0 (.2 6 3 )
1 .1 5 (.0 4 5)
M IN .
NOTES :
1 D IM E N S IO N IN G & T O L E R A N C IN G
P E R A N S I Y 1 4.5 M , 1 9 8 2
1
2
3
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 .3 0 (.1 3 0 )
3 .1 0 (.1 2 2 )
-B -
1 3 .7 0 (.5 4 0 )
1 3 .5 0 (.5 3 0 )
C
A
1 .4 0 (.0 5 5 )
3X
1 .0 5 (.0 4 2 )
0 .9 0 (.0 35 )
3 X 0 .7 0 (.0 28 )
0 .2 5 (.0 1 0 )
3X
M
A M
B
2 .5 4 (.1 0 0 )
2X
0 .4 8 (.0 1 9 )
0 .4 4 (.0 1 7 )
2 .8 5 (.1 1 2 )
2 .6 5 (.1 0 4 )
D
B
M IN IM U M C R E E P A G E
D IS T A N C E B E T W E E N
A -B -C -D = 4 .8 0 (.1 89 )
Notes
 Repetitive rating: VGE=20V; Pulse width limited by maximum junction temperature
(figure 20)
‚ VCC=80%(VCES), VGE=20V, L=10µH, RG= 100Ω (figure 19)
ƒ Pulse width ≤ 80µs, duty factor ≤ 0.1%.
„ Pulse width 5.0µs, single shot.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice.
10/99
10
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