Si1413DH New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.115 @ VGS = –4.5 V –2.9 0.155 @ VGS = –2.5 V –2.4 0.220 @ VGS = –1.8 V –2.0 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switching D PA Switch D Level Switch SOT-363 SC-70 (6-LEADS) D 1 6 D D 2 5 D G 3 4 S Marking Code BC XX YY D G Lot Traceability and Date Code Part # Code S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS –20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C V –2.3 –2.9 ID TA = 85_C Pulsed Drain Current –2.0 –1.6 IDM Continuous Diode Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 85_C Operating Junction and Storage Temperature Range PD A –8 –1.4 –0.9 1.56 1.0 0.81 0.52 TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 60 80 100 125 34 45 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71878 S-20952—Rev. A, 01-Jul-02 www.vishay.com 1 Si1413DH New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS = VGS, ID = –100 mA –0.45 Typ Max Unit 0.8 V "100 nA Static Gate Threshold Voltage VGS(th) Gate-Body Leakage VDS = 0 V, VGS = "8 V IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Diode Forward Voltagea –1 VDS = –16 V, VGS = 0 V, TJ = 85_C –5 VDS = –5 V, VGS = –4.5 V rDS(on) Forward Transconductancea VDS = –16 V, VGS = 0 V m mA –4 A VGS = –4.5 V, ID = –2.9 A 0.095 0.115 VGS = –2.5 V, ID = –2.4 A 0.125 0.155 VGS = –1.8 V, ID = –1.0 A 0.180 0.220 gfs VDS = –10 V, ID = –2.9 A 6 VSD IS = –1.4 A, VGS = 0 V –0.80 –1.1 6 8.5 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.2 Turn-On Delay Time td(on) 13 20 32 50 34 50 42 65 Rise Time VDS = –10 V, VGS = –4.5 V, ID = –2.9 A tr Turn-Off Delay Time VDD = –10 V, RL = 10 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W td(off) Fall Time 1.2 tf nC ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 8 8 VGS = 5 thru 2.5 V TC = –55_C 6 2V I D – Drain Current (A) I D – Drain Current (A) 6 4 1.5 V 2 25_C 125_C 4 2 1V 0 0 1 2 3 4 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS – Gate-to-Source Voltage (V) Document Number: 71878 S-20952—Rev. A, 01-Jul-02 Si1413DH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 1000 0.4 800 0.3 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) On-Resistance vs. Drain Current 0.5 VGS = 1.8 V 0.2 VGS = 2.5 V Ciss 600 400 VGS = 4.5 V 0.1 200 0.0 0.0 Coss Crss 0 1.5 3.0 4.5 6.0 7.5 0 4 Gate Charge 16 20 On-Resistance vs. Junction Temperature 6 1.6 VDS = 10 V ID = –2.9 A 5 r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 12 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) 4 3 2 1 0 0.0 1.6 3.2 4.8 6.4 VGS = 4.5 V ID = –2.9 A 1.4 1.2 1.0 0.8 0.6 –50 8.0 –25 0 Qg – Total Gate Charge (nC) 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 r DS(on) – On-Resistance ( W ) 10 I S – Source Current (A) 8 TJ = 150_C TJ = 25_C 1 0.4 0.3 ID = –2.9 A 0.2 0.1 0.0 0.1 0 0.3 0.6 0.9 1.2 VSD – Source-to-Drain Voltage (V) Document Number: 71878 S-20952—Rev. A, 01-Jul-02 1.5 0 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si1413DH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 35 ID = 250 mA 28 0.2 21 Power (W) V GS(th) Variance (V) 0.3 0.1 14 0.0 7 –0.1 –0.2 –50 –25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 Time (sec) TJ – Temperature (_C) Safe Operating Area 10 1 ms I D – Drain Current (A) Limited by rDS(on) 1 10 ms 100 ms 1s 0.1 10 s dc TC = 25_C Single Pulse 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 100_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71878 S-20952—Rev. A, 01-Jul-02 Si1413DH New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 Document Number: 71878 S-20952—Rev. A, 01-Jul-02 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5