TI CD74HC10

[ /Title
(CD74
HC10,
CD74
HCT10
)
/Subject
(High
Speed
CMOS
Logic
Triple
3-Input
NAND
Gate)
/Autho
r ()
/Keywords
(High
Speed
CMOS
Logic
Triple
3-Input
NAND
Gate,
High
Speed
CMOS
Logic
Triple
3-Input
NAND
Gate,
Harris
Semi-
CD74HC10,
CD74HCT10
Data sheet acquired from Harris Semiconductor
SCHS128
High Speed CMOS Logic
Triple 3-Input NAND Gate
August 1997
Features
at VCC = 5V
• HCT Types
- 4.5V to 5.5V Operation
- Direct LSTTL Input Logic Compatibility,
VIL= 0.8V (Max), VIH = 2V (Min)
- CMOS Input Compatibility, Il ≤ 1µA at VOL, VOH
• Buffered Inputs
• Typical Propagation Delay: 8ns at VCC = 5V,
CL = 15pF, TA = 25oC
• Fanout (Over Temperature Range)
- Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL Loads
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads
• Related Literature
- CD54HC10F3A and CD54HCT10F3A Military
Data Sheet, Document Number 3758
• Wide Operating Temperature Range . . . -55oC to 125oC
• Balanced Propagation Delay and Transition Times
Description
• Significant Power Reduction Compared to LSTTL
Logic ICs
The Harris CD74HC10, CD74HCT10, logic gates utilize
silicon gate CMOS technology to achieve operating speeds
similar to LSTTL gates with the low power consumption of
standard CMOS integrated circuits. All devices have the
ability to drive 10 LSTTL loads. The 74HCT logic family is
• HC Types
- 2V to 6V Operation
- High Noise Immunity: NIL = 30%, NIH = 30% of VCC
Pinout
CD74HC10, CD74HCT10
(PDIP, SOIC)
TOP VIEW
1A 1
14 VCC
1B 2
13 1C
2A 3
12 1Y
2B 4
11 3C
2C 5
10 3B
2Y 6
9 3A
GND 7
8 3Y
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
© Harris Corporation 1997
1
File Number
1551.1
CD74HC10, CD74HCT10
Functional Diagram
1
14
2
13
1A
1B
2A
2B
2C
2Y
GND
VCC
1C
3
12
4
11
5
10
6
9
7
8
1Y
3C
3B
3A
3Y
TRUTH TABLE
INPUTS
OUTPUT
nA
nB
nC
nY
L
L
L
H
L
L
H
H
L
H
L
H
L
H
H
H
H
L
L
H
H
L
H
H
H
H
L
H
H
H
H
L
NOTE: H = High Voltage Level, L = Low Voltage Level
Logic Symbol
nA
nY
nB
nC
2
CD74HC10, CD74HCT10
Absolute Maximum Ratings
Thermal Information
DC Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V
DC Input Diode Current, IIK
For VI < -0.5V or VI > VCC + 0.5V . . . . . . . . . . . . . . . . . . . . . .±20mA
DC Output Diode Current, IOK
For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA
DC Output Source or Sink Current per Output Pin, IO
For VO > -0.5V or VO < VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±25mA
DC VCC or Ground Current, ICC or IGND . . . . . . . . . . . . . . . . . .±50mA
Thermal Resistance (Typical, Note 3)
θJA (oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
180
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range (TA) . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Supply Voltage Range, VCC
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V
DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to VCC
Input Rise and Fall Time
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
3. θJA is measured with the component mounted on an evaluation PC board in free air.
DC Electrical Specifications
TEST
CONDITIONS
PARAMETER
SYMBOL
VI (V)
High Level Input
Voltage
VIH
-
Low Level Input
Voltage
VIL
25oC
IO (mA) VCC (V)
-40oC TO 85oC
-55oC TO 125oC
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
2
1.5
-
-
1.5
-
1.5
-
V
4.5
3.15
-
-
3.15
-
3.15
-
V
6
4.2
-
-
4.2
-
4.2
-
V
2
-
-
0.5
-
0.5
-
0.5
V
4.5
-
-
1.35
-
1.35
-
1.35
V
6
-
-
1.8
-
1.8
-
1.8
V
-0.02
2
1.9
-
-
1.9
-
1.9
-
V
-0.02
4.5
4.4
-
-
4.4
-
4.4
-
V
-0.02
6
5.9
-
-
5.9
-
5.9
-
V
-
-
-
-
-
-
-
-
-
V
HC TYPES
High Level Output
Voltage
CMOS Loads
VOH
-
VIH or
VIL
High Level Output
Voltage
TTL Loads
Low Level Output
Voltage
CMOS Loads
VOL
VIH or
VIL
Low Level Output
Voltage
TTL Loads
Input Leakage
Current
II
VCC or
GND
-
-
-4
4.5
3.98
-
-
3.84
-
3.7
-
V
-5.2
6
5.48
-
-
5.34
-
5.2
-
V
0.02
2
-
-
0.1
-
0.1
-
0.1
V
0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
0.02
6
-
-
0.1
-
0.1
-
0.1
V
-
-
-
-
-
-
-
-
-
V
4
4.5
-
-
0.26
-
0.33
-
0.4
V
5.2
6
-
-
0.26
-
0.33
-
0.4
V
-
6
-
-
±0.1
-
±1
-
±1
µA
3
CD74HC10, CD74HCT10
DC Electrical Specifications
(Continued)
TEST
CONDITIONS
SYMBOL
VI (V)
ICC
VCC or
GND
0
High Level Input
Voltage
VIH
-
Low Level Input
Voltage
VIL
High Level Output
Voltage
CMOS Loads
VOH
PARAMETER
Quiescent Device
Current
25oC
IO (mA) VCC (V)
-40oC TO 85oC
-55oC TO 125oC
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
6
-
-
2
-
20
-
40
µA
-
4.5 to
5.5
2
-
-
2
-
2
-
V
-
-
4.5 to
5.5
-
-
0.8
-
0.8
-
0.8
V
VIH or
VIL
-0.02
4.5
4.4
-
-
4.4
-
4.4
-
V
-4
4.5
3.98
-
-
3.84
-
3.7
-
V
0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
4
4.5
-
-
0.26
-
0.33
-
0.4
V
±0.1
-
±1
-
±1
µA
HCT TYPES
High Level Output
Voltage
TTL Loads
Low Level Output
Voltage
CMOS Loads
VOL
VIH or
VIL
Low Level Output
Voltage
TTL Loads
Input Leakage
Current
Quiescent Device
Current
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
(Note 4)
II
VCC
and
GND
0
5.5
-
ICC
VCC or
GND
0
5.5
-
-
2
-
20
-
40
µA
∆ICC
VCC
- 2.1
-
4.5 to
5.5
-
100
360
-
450
-
490
µA
NOTE:
4. For dual-supply systems theorectical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA.
HCT Input Loading Table
INPUT
UNIT LOADS
All
0.6
NOTE: Unit Load is ∆ICC limit specified in DC Electrical
Specifications table, e.g. 360µA max at 25oC.
Switching Specifications Input tr, tf = 6ns
SYMBOL
TEST
CONDITIONS
Propagation Delay,
Input to Output (Figure 1)
tPLH, tPHL
CL = 50pF
Propagation Delay, Data Input to
Output Y
tPLH, tPHL
PARAMETER
25oC
-40oC TO 85oC -55oC TO 125oC
VCC
(V)
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
2
-
-
100
-
125
-
150
ns
4.5
-
-
20
-
25
-
30
ns
HC TYPES
CL = 15pF
6
-
-
17
-
21
-
26
ns
5
-
8
-
-
-
-
-
ns
4
CD74HC10, CD74HCT10
Switching Specifications Input tr, tf = 6ns
PARAMETER
Transition Times (Figure 1)
Input Capacitance
Power Dissipation Capacitance
(Notes 5, 6)
(Continued)
SYMBOL
TEST
CONDITIONS
tTLH, tTHL
CL = 50pF
25oC
-40oC TO 85oC -55oC TO 125oC
VCC
(V)
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
2
-
-
75
-
95
-
110
ns
4.5
-
-
15
-
19
-
22
ns
6
-
-
13
-
16
-
19
ns
CI
-
-
-
-
10
-
10
-
10
pF
CPD
-
5
-
24
-
-
-
-
-
pF
HCT TYPES
Propagation Delay, Input to
Output (Figure 2)
tPLH, tPHL
CL = 50pF
4.5
-
-
24
-
30
-
36
ns
Propagation Delay, Data Input to
Output Y
tPLH, tPHL
CL = 15pF
5
-
9
-
-
-
-
-
ns
Transition Times (Figure 2)
tTLH, tTHL
CL = 50pF
4.5
-
-
15
-
19
-
22
ns
Input Capacitance
Power Dissipation Capacitance
(Notes 5, 6)
CI
-
-
-
-
10
-
10
-
10
pF
CPD
-
5
-
28
-
-
-
-
-
pF
NOTES:
5. CPD is used to determine the dynamic power consumption, per gate.
6. PD = VCC2 fi (CPD + CL) where fi = input frequency, CL = output load capacitance, VCC = supply voltage.
Test Circuits and Waveforms
tr = 6ns
tf = 6ns
90%
50%
10%
INPUT
GND
tTLH
GND
tTHL
90%
50%
10%
INVERTING
OUTPUT
3V
2.7V
1.3V
0.3V
INPUT
tTHL
tPHL
tf = 6ns
tr = 6ns
VCC
tTLH
90%
1.3V
10%
INVERTING
OUTPUT
tPHL
tPLH
FIGURE 5. HC AND HCU TRANSITION TIMES AND PROPAGATION DELAY TIMES, COMBINATION LOGIC
tPLH
FIGURE 6. HCT TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
5
IMPORTANT NOTICE
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue
any product or service without notice, and advise customers to obtain the latest version of relevant information
to verify, before placing orders, that information being relied on is current and complete. All products are sold
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those
pertaining to warranty, patent infringement, and limitation of liability.
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO
BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards must be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other
intellectual property right of TI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used. TI’s publication of information regarding any third
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.
Copyright  1998, Texas Instruments Incorporated