2SD2256 Silicon NPN Triple Diffused ADE-208-928 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB1494 Features • High breakdown voltage and high current (VCEO = 120 V, I C = 25 A) • Built-in C-E diode Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 ID 3 3 2SD2256 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector current IC 25 A Collector peak current I C(peak) 35 A 120 W 150 °C –55 to +150 °C 25 A 1 Collector power dissipation PC * Junction temperature Tj Storage temperature Tstg C to E diode forward current Note: ID* 1 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 120 — — V I C = 0.1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 120 — — V I C = 25 mA, RBE = ∞ Collector to emitter sustain voltage VCEO(sus) 120 — — V I C = 200 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 7 — — V I E = 50 mA, IC = 0 Collector cutoff current I CBO — — 10 µA VCB = 100 V, IE = 0 I CEO — — 10 µA VCE = 100 V, RBE = ∞ hFE1 2000 — 20000 VCE = 4 V, IC = 12 A*1 hFE2 500 — VCE = 4 V, IC = 25 A*1 Collector to emitter saturation VCE(sat)1 — — 2.0 V I C = 12 A, IB = 24 mA*1 voltage VCE(sat)2 — — 3.5 V I C = 25 A, IB = 250 mA*1 Base to emitter saturation VBE(sat)1 — — 3.0 V I C = 12 A, IB = 24 mA*1 voltage VBE(sat)2 — — 4.5 V I C = 25 A, IB = 250 mA*1 DC current transfer ratio Note: 2 1. Pulse test. 2SD2256 Maximum Collector Dissipation Curve Area of Safe Operation 100 Ta = 25°C 0.3 1 shot pulse ) 50 100 Case temperature TC (°C) 150 3 TC = 25°C 2.5 2.0 12 1.5 8 4 1.0 mA IB = 0 0 10,000 3.0 1 2 3 4 5 Collector to emitter voltage VCE (V) DC current transfer ratio hFE 5.0 Collector current IC (A) 16 4.03.5 10 30 100 300 Collector to emitter voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics 20 s er a 1.0 0.1 0 C s 5° 0m =2 C =1 n( T tio 3 Op 40 IC(max) 10 1m 80 PW Collector current IC (A) iC(peak) 30 DC Collector power dissipation PC (W) 120 3,000 TC 1,000 = °C 75 °C 25 °C 5 –2 300 VCE = 4 V 100 30 10 0.1 0.3 3 10 1.0 30 Collector current IC (A) 100 3 Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) 2SD2256 Saturation Voltage vs. Collector Current 10 TC = 25°C IC/IB = 200 3 VBE(sat) 1.0 VCE(sat) 0.3 0.1 0.1 0.3 1.0 10 3 30 Collector current IC (A) 100 Transient Thermal Resistance Thermal resistance θj-c (°C/W) 10 3 TC = 25°C 1.0 0.3 0.1 1m 4 10 m 100 m 1.0 Time t (s) 10 100 1000 2SD2256 Package Dimensions 15.6 ± 0.3 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Unit: mm 4.8 ± 0.2 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) TO-3P — Conforms 5.0 g 5 2SD2256 Cautions 1. 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