TM FQH140N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. • • • • • • • 140A, 100V, RDS(on) = 0.01Ω @VGS = 10 V Low gate charge ( typical 220 nC) Low Crss ( typical 470 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " ! " " " G! ID S FQH Series Absolute Maximum Ratings Symbol VDSS ! TO-247 G D S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQA140N10 100 Units V 140 A - Continuous (TC = 100°C) IDM Drain Current - Pulsed 99 A (Note 1) 560 A ± 25 V 1500 mJ VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 140 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 37.5 6.5 375 2.5 -55 to +175 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2003 Fairchild Semiconductor Corporation Max 0.4 Units °C/W 0.24 -- °C/W -- 40 °C/W Rev. A, August 2003 FQH140N10 QFET Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 100 -- -- V -- 0.08 -- V/°C VDS = 80 V, VGS = 0 V -- -- 1 µA VDS = 64 V, TC = 150°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.008 0.01 Ω -- 80 -- S -- 6100 7900 pF -- 2000 2600 pF -- 420 550 pF Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 70 A gFS Forward Transconductance VDS = 30 V, ID = 70 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 40 V, ID = 140 A, RG = 25 Ω (Note 4, 5) VDS = 64 V, ID = 140 A, VGS = 10 V (Note 4, 5) -- 75 160 ns -- 940 1890 ns -- 350 710 ns -- 360 730 ns -- 220 285 nC -- 39 -- nC -- 114 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 140 A ISM -- -- 560 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 140 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 140 A, dIF / dt = 100 A/µs (Note 4) -- 140 -- ns -- 730 -- nC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.115mH, IAS = 140A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 140A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 6. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 FQH140N10 Electrical Characteristics FQH140N10 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 2 10 2 10 ID , Drain Current [A] ID, Drain Current [A] Top : 175℃ 1 10 25℃ 0 -55℃ 10 ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ 1 10 -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 30 IDR , Reverse Drain Current [A] RDS(ON) [mΩ ], Drain-Source On-Resistance 25 VGS = 10V 20 VGS = 20V 15 10 5 2 10 1 10 0 10 175℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 25℃ ※ Note : TJ = 25℃ -1 0 0 100 200 300 400 500 600 700 800 900 10 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 20000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 16000 Ciss 14000 12000 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 10000 Crss 8000 6000 4000 2000 10 VGS, Gate-Source Voltage [V] 18000 Capacitance [pF] 0.2 ID , Drain Current [A] VDS = 50V VDS = 80V 8 6 4 2 ※ Note : ID = 140 A 0 -1 10 0 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation 0 40 80 120 160 200 240 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A, August 2003 (Continued) 1.2 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage FQH140N10 Typical Characteristics 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 1.5 1.0 0.5 ※ Notes : 1. VGS = 10 V 2. ID = 70 A 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 150 Operation in This Area is Limited by R DS(on) 3 10 120 ID, Drain Current [A] ID, Drain Current [A] 10 µs 100 µs 2 10 1 ms 10 ms DC 1 10 ※ Notes : 0 10 90 Limited by Package 60 30 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area 100 125 150 175 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 ※ N o te s : 1 . Z θ J C ( t) = 0 .4 ℃ /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) -1 0 .2 0 .1 0 .0 5 PDM 0 .0 2 10 -2 t1 0 .0 1 Z θ JC 75 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] t2 s i n g l e p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 FQH140N10 Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2003 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Time Rev. A, August 2003 FQH140N10 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 FQH140N10 Package Dimensions TO-247AD (FKS PKG CODE 001) Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOSTM I2C™ TM EnSigna ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5