PD-95830 RevB IRAMS10UP60B Series Plug N DriveTM Integrated Power Module for Appliance Motor Drive Description 10A, 600V with Internal Shunt Resistor International Rectifier's IRAMS10UP60B is an Integrated Power Module developed and optimized for electronic motor control in appliance applications such as washing machines and refrigerators. Plug N Drive technology offers an extremely compact, high performance AC motor-driver in a single isolated package for a very simple design. An internal shunt is also included and offers easy current feedback and overcurrent monitor for precise and safe operation. A built-in temperature monitor and over-current protection, along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. The integration of the bootstrap diodes for the high-side driver section, and the single polarity power supply required to drive the internal circuitry, simplify the utilization of the module and deliver further cost reduction advantages. Features • • • • • • • • • • • • Internal Shunt Resistor Integrated Gate Drivers and Bootstrap Diodes Temperature Monitor Fully Isolated Package Low VCE(on) Non Punch Through IGBT Technology Undervoltage lockout for all channels Matched propagation delay for all channels Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver for better noise immunity Motor Power range 0.4~0.75kW / 85~253 Vac Isolation 2000VRMS /1min Absolute Maximum Ratings Parameter Description VCES Maximum IGBT Blocking Voltage Max. Value 600 V+ Io @ TC=25°C Positive Bus Input Voltage 450 RMS Phase Current (see Note 1) 10 Io @ TC=100°C RMS Phase Current (see Note 1) 5 Ipk Maximum Peak Phase Current (tp<100ms) 15 Units V A Fp Maximum PWM Carrier Frequency 20 Pd Maximum Power dissipation per Phase 20 W Viso Isolation Voltage (1min) 2000 VRMS TJ (IGBT & Diodes) Operating Junction temperature Range -40 to +150 TJ (Driver IC) Operating Junction temperature Range -40 to +150 T Mounting torque Range (M3 screw) 0.8 to 1.0 kHz °C Nm Note 1: Limited by current protection, see table "Inverter Section Electrical Characteristics" on page 3 www.irf.com 1 IRAMS10UP60B Internal Electrical Schematic - IRAMS10UP60B V+ (10) RS V- (12) Rg1 Rg3 Rg5 VB1 (7) U, VS1 (8) VB2 (4) V, VS2 (5) VB3 (1) W, VS3 (2) 23 VS1 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3 Rg2 LO1 16 Rg4 24 HO1 R3 LO2 15 25 VB1 1 VCC HIN1 (15) HIN2 (16) HIN3 (17) 2 HIN1 LIN1 (18) 5 LIN1 Rg6 Driver IC LO3 14 3 HIN2 4 HIN3 LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13 LIN2 (19) LIN3 (20) FAULT(21) ITRIP (22) VTH (13) VDD (14) R4 R1 R2 THERMISTOR C1 C2 VSS (23) 2 www.irf.com IRAMS10UP60B Inverter Section Electrical Characteristics @ TJ=25°C Symbol Parameter Min Typ Max V(BR)CES Collector-to-Emitter Breakdown Voltage 600 --- --- V VIN =5V, IC=250µA ∆V(BR)CES / ∆T Temperature Coeff. Of Breakdown Voltage --- 0.57 --- V/°C VIN =5V, IC=1.0mA (25°C - 150°C) VCE(ON) Collector-to-Emitter Saturation Voltage --- 1.7 2.0 --- 2.0 2.4 ICES Zero Gate Voltage Collector Current-to-Emitter --- 5 15 --- 10 40 Ilk_module Zero Gate Voltage Phase-tophase Current -- -- 50 VFM Diode Forward Voltage Drop --- 1.8 2.35 --- 1.3 1.7 IBUS_Trip Current Protection Threashold (positive going) 13.1 16.4 Units Conditions V µA µA V A IC=5A TJ=25°C, VDD=15V IC=5A TJ=150°C VIN =5V, V+=600V VIN =5V, V+=600V, TJ=150°C VIN =5V, V+=600V IC=5A IC=5A, TJ=150°C Tj =-40°C to 150°C Inverter Section Switching Characteristics @ TJ=25°C Symbol Parameter Min Typ Max Eon Turn-On Switching Loss --- 200 235 Eoff Turn-Off Switching Loss --- 75 100 Etot Total Switching Loss --- 275 335 Eon Turn-on Swtiching Loss --- 300 360 Eoff Turn-off Switching Loss --- 135 165 Etot Total Switching Loss --- 435 525 Erec Diode Rev. Recovery energy --- 30 trr Diode Reverse Recovery time --- 100 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area Units Conditions µJ IC=5A, V+=400V VDD=15V, L=1mH See CT1 TJ=25°C TJ=150°C µJ Energy losses include "tail" and diode reverse recovery 40 µJ 145 ns TJ=150°C, V+ =400V VDD=15V, IF =5A, L=1mH TJ=150°C, IC=5A, VP=600V V+=480V, VDD =+15V to 0V See CT3 FULL SQUARE 10 --- --- µs TJ=150°C, VP=600V, V+=360V, VDD=+15V to 0V See CT2 Thermal Resistance Symbol Parameter Min Typ Max Rth(J-C) Junction to case thermal resistance, each IGBT under inverter operation. --- 4.2 4.7 Rth(J-C) Junction to case thermal resistance, each Diode under inverter operation. --- 5.5 6.5 °C/W Rth(C-S) Case to Sink thermal resistance --- 0.1 --- °C/W www.irf.com Units Conditions °C/W Flat, greased surface. Heatsink compound thermal conductivity - 1W/mK 3 IRAMS10UP60B Absolute Maximum Ratings Driver Function Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to VSS . (Note 2) 14 Symbol VS1,2,3 Definition High Side offset voltage Min -0.3 Max 600 Units V VB1,2,3 High Side floating supply voltage -0.3 20 V VDD Low Side and logic fixed supply voltage -0.3 20 V VIN Input voltage LIN, HIN, T/ITRIP -0.3 VSS+15 or VCC+0.3 V TJ Juction Temperature -40 150 °C Raccomended Operating Conditions Driver Function The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to VSS. The VS offset is tested with all supplies biased at 15V differential (Note 2). All input pin (VIN ) and ITRIP are clamped with a 5.2V zener diode and pull-up resistor to VDD Symbol VB1,2,3 Definition High side floating supply voltage Min VS+12 Max VS+20 Units VS1,2,3 High side floating supply offset voltage Note 3 600 VDD Low side and logic fixed supply voltage 12 20 V VIN Logic input voltage LIN, HIN VSS VSS+5 V V Static Electrical Characteristics Driver Function VBIAS (VDD, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are applicable to all six channels. (Note 2) Symbol VIN,th+ Definition Positive going input threshold Min 3.0 Typ --- Max --- Units V VIN,th- Negative going input threshold --- --- 0.8 V VCCUV+ VBSUV+ VCC and VBS supply undervoltage Positive going threshold 10.6 11.1 11.6 V VCCUVVBSUV- VCC and VBS supply undervoltage Negative going threshold 10.4 10.9 11.4 V VCCUVH VBSUVH VCC and VBS supply undervoltage Ilockout hysteresis --- 0.2 --- V IQBS Quiescent VBS supply current --- 70 120 µA IQCC Quiscent VCC supply current --- 1.6 2.3 mA ILK Offset Supply Leakage Current --- --- 50 IIN+ Input bias current (OUT=LO) --- 100 220 IIN+ Input bias current (OUT=HI) V(ITRIP) ITRIP threshold Voltage (OUT=HI or OUT=LO) 4 --- 200 300 µA µA µA 0.44 0.49 0.54 V www.irf.com IRAMS10UP60B Dynamic Electrical Characteristics VDD=VBS=VBIAS=15V, PWMIN=2kHz, VIN_ON=VIN_th+, VIN_OFF=VIN_thTA=25°C, unless otherwise specified Symbol Definition Min Typ Max Units TON Input to output propagation turn-on delay time (see fig.11) - 470 - ns TOFF Input to output propagation turn-off delay time (see fig. 11) - 615 - ns DT Dead Time - 290 - ns I/TTrip T/ITrip to six switch to turn-off propagation delay (see fig. 2) - 750 - ns TFCLTRL Post ITrip to six switch to turn-off clear time (see fig. 2) - 9 - ms Internal NTC - Thermistor Characteristics Parameter Typ Units R25 Resistance 100 +/- 3% kΩ TC = 25°C R125 Resistance 2.522 ± 10.9% kΩ TC = 125°C B B-constant (25-50°C) 4250 +/- 2% k Temperature Range -40 / 125 °C 1 mW/°C Typ. Dissipation constant Conditions R2 = R 1e [B(1/T2 - 1/T1)] TC = 25°C Internal Current Sensing Resistor - Shunt Characteristics Parameter Units Resistance 33.3 ±1% Tollerance ±1% Max Power Dissipation Temperature Range mΩ 2.2 W -40 / 125 °C Note 2: For more details, see IR21363 data sheet Note 3: Logic operational for Vs from V- -5V to V- +600V. Logic state held for Vs from V- -5V to V- -VBS. (please refer to DT97-3 for more details) Thermistor Built-in IRAMS10UP60B ITRIP (22) FLT (21) Driver IC VTH (13) NTC VSS (23) www.irf.com 5 IRAMS10UP60B HIN1,2,3 LIN1,2,3 HO1,2,3 LO1,2,3 Itrip U,V,W Figure1. Input/Output Timing Diagram Note 4: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load. V+ Ho HIN1,2,3 (15,16,17) (18,19,20) 6 HIN1,2,3 LIN1,2,3 U,V,W 0 0 0 1 0 1 1 X 1 0 1 X V+ 0 X X U,V,W (8,5,2) IC Driver LIN1,2,3 Itrip Lo www.irf.com IRAMS10UP60B HIN1,2,3 LIN1,2,3 1 IBUS 2 3 4 5 6 IBUS_trip 6µs 1µs 50% U,V,W tfltclr Sequence of events: 1-2) Current begins to rise 2) Current reaches IBUS_Trip level 2-3) Current is higher than IBUS_Trip for at least 6µs. This value is the worst-case condition with very low over-current. In case of high current (short circuit), the actual delay will be smaller. 3-4) Delay between driver identification of over-current condition and disabling of all outputs 4) Current starts decreasing, eventually reaching 0 5) Current goes below IBUS_trip, the driver starts its auto-reset sequence 6) Driver is automatically reset and normal operation can resume (over-current condition must be removed by the time the drivers automatically resets itself) Figure 2. ITrip Timing Waveform Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load. www.irf.com 7 IRAMS10UP60B Module Pin-Out Description 8 Pin Name 1 VB3 Description 2 W,VS3 3 na none 4 VB2 High Side Floating Supply voltage 2 5 V,VS2 6 na none 7 VB1 High Side Floating Supply voltage 1 8 U,VS1 9 na none 10 V+ Positive Bus Input Voltage 11 na none 12 V- Negative Bus Input Voltage 13 VTH Temperature Feedback 14 VDD +15V Main Supply 15 HIN1 Logic Input High Side Gate Driver - Phase 1 16 HIN2 Logic Input High Side Gate Driver - Phase 2 17 HIN3 Logic Input High Side Gate Driver - Phase 3 18 LIN1 Logic Input Low Side Gate Driver - Phase 1 19 LIN2 Logic Input Low Side Gate Driver - Phase 2 20 LIN3 Logic Input Low Side Gate Driver - Phase 3 21 FAULT 22 Itrip Current Sense and Itrip Pin 23 VSS Negative Main Supply High Side Floating Supply Voltage 3 Output 3 - High Side Floating Supply Offset Voltage Output 2 - High Side Floating Supply Offset Voltage Output 1 - High Side Floating Supply Offset Voltage Fault indicator www.irf.com IRAMS10UP60B Typical Application Connection IRAMS10UP60B V+ (10) DC BUS CAPACITORS V- (12) Cb1 Cb2 3-ph AC MOTOR RS VB1 (7) U, VS1 (8) VB2 (4) V, VS2 (5) Cb3 VB3 (1) W, VS3 (2) 23 VS1 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3 LO1 16 24 HO1 LO2 15 25 VB1 1 VCC PWM in PWM in PWM in PWM in CONTROLLER PWM in 2 HIN1 LIN1 (18) 5 LIN1 LO3 14 3 HIN2 4 HIN3 LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13 LIN2 (19) PWM in LIN3 (20) FAULT indicator Current Feedback Temperature Monitor 15V 10m HIN1 (15) HIN2 (16) HIN3 (17) Driver IC FAULT(21) ITRIP (22) VTH (13) THERMISTOR VDD (14) 0.1µ VSS (23) 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-Gnd and VB-VSS terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1mF, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. 4. Current sense signal can be obtained from pin 22 and pin 23 5. After approx. 8 ms the FAULT is reset 6.PWM generator must be disabled within Fault duration to garantee shutdown of the system, overcurrent condition must be cleared before resuming operation www.irf.com 9 Maximum RMS Output Current/Phase (A). IRAMS10UP60B 10 9 Tc=100°C 8 Tc=110°C 7 Tc=120°C 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 PWM Switching Frequency (kHz) Figure 3. Maximum sinusoidal phase current as function of switching frequency V+=400V , Tj=150°C, Modulation Depth=0.8, PF=0.6 7 Maximum RMS Phase Current (A). Switching Frequency: 6 12 kHz 16 kHz 20 kHz 5 4 3 2 1 0 1 10 100 Motor Current Modulation Frequency (Hz) Figure 4. Maximum sinusoidal phase current as function of modulation frequency V+=400V, Tj=150°C, Tc=100°C, Modulation Depth=0.8, PF=0.6 10 www.irf.com IRAMS10UP60B 450 Current Voltage 8 Current (A) 7 400 350 6 300 5 250 4 200 3 150 2 100 1 50 0 0 -1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Voltage (V) 9 -50 1.0 Time (µs) Figure 5. IGBT Turn-on. Typical turn-on waveform @TJ=150°C, V+=400V 9 450 8 400 7 350 Current Voltage 5 300 250 4 200 3 150 2 100 1 50 0 0 -1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Voltage (V) Current (A) 6 -50 1.0 Time (µs) Figure 6. IGBT Turn-off. Typical turn-off waveform @TJ=150°C, V+=400V www.irf.com 11 IRAMS10UP60B Therimstor Resistance (kΩ) 1000 Maximum Nominal Minimum 100 10 1 0 20 40 60 80 Temperature (°C) 100 120 140 Figure 7. Variation of thermistor resistance with temperature 180 IGBT Junction temperature (°C) 170 160 150 Vbus=400V Imot=5Arms fsw=20kHz 140 130 120 110 100 90 80 60 70 80 90 100 110 120 Thermistor temperature (°C) Figure 8. Estimated maximum IGBT junction temperature with thermistor temperature 12 www.irf.com IRAMS10UP60B 20 17.5 Capacitance (µF) 15 15 12.5 10 6.8 7.5 4.7 5 3.3 2.2 2.5 0 0 1.5 3 4.55 6 7.5 9 10 10.5 12 13.5 1515 16.5 18 19.5 20 Switching Frequency (kHz) Figure 9. Recommended minimum Bootstrap Capacitor Value Vs Switching Frequency www.irf.com 13 IRAMS10UP60B Figure 11. Switching Parameter Definitions VCE IC IC VCE 90% IC 50% HIN/LIN 90% IC HIN/LIN HIN/LIN 50% HIN/LIN 10% VCE 10% IC 10% IC TON TOFF tr Figure 11a. Input to Output propagation turn-on delay time tf Figure 11b. Input to Output propagation turn-off delay time IF VCE HIN/LIN Irr trr Figure 11c. Diode Reverse Recovery 14 www.irf.com IRAMS10UP60B V+ 5V Ho Hin1,2,3 IC Driver U,V,W Lo Lin1,2,3 Figure CT1. Switching Loss Circuit V+ 1k 10k VCC Lin1,2,3 IN Ho Hin1,2,3 IC Driver 5VZD U,V,W PWM=4µs Io Lo IN Io VP=Peak Voltage on the IGBT die Figure CT2. S.C.SOA Circuit V+ Ho Hin1,2,3 1k IN 10k VCC IC Driver 5VZD Lin1,2,3 IN U,V,W Io Lo Io VP=Peak Voltage on the IGBT die Figure CT3. R.B.SOA Circuit www.irf.com 15 IRAMS10UP60B Package Outline note 3 note 2 027-E2D24 IRAMS10UP60B note 1 Standard pin leadforming option Notes: Dimensions in mm 1- Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking For mounting instruction, see AN1049 16 www.irf.com IRAMS10UP60B Package Outline note 2 note 3 027-E2D24 IRAMS10UP60B-2 note 1 Pin leadforming option -2 Notes: Dimensions in mm 1- Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 9/04 www.irf.com 17