IRF IRLMS4502

PD- 93759B
IRLMS4502
HEXFET® Power MOSFET
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
D
A
D
1
6
2
5
3
4
VDSS = -12V
D
G
D
S
RDS(on) = 0.042Ω
Top View
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications..
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with Rds(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and RDS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
Micro6ä
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-12
-5.5
-4.4
-44
1.7
1.1
0.013
28
± 12
-55 to + 150
V
W/°C
mJ
V
°C
Max.
Units
75
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
1
01/13/03
IRLMS4502
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
I GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V(BR)DSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
-12
–––
–––
–––
-0.60
8.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = -250µA
-0.003 ––– V/°C Reference to 25°C, I D = -1mA
––– 0.042
VGS = -4.5V, ID = -5.5A ‚
Ω
––– 0.075
VGS = -2.5V, ID = -4.7A ‚
––– –––
V
VDS = V GS, ID = -250µA
––– –––
S
VDS = -10V, ID = -5.5A
––– -1.0
VDS = -12V, VGS = 0V
µA
––– -25
VDS = -9.6V, VGS = 0V, T J = 125°C
––– -100
VGS = -12V
nA
––– 100
VGS = 12V
22
33
ID = -5.5A
3.9 5.8
nC
VDS = -10V
11
16
VGS = -5.0V ‚
18 –––
VDD = -6.0V
460 –––
ID = -1.0A
ns
130 –––
RG = 4.5Ω
250 –––
RD = 6.0Ω ‚
1820 –––
VGS = 0V
1110 –––
pF
VDS = -10V
1070 –––
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-1.7
–––
–––
-44
–––
–––
–––
–––
31
21
-1.2
46
32
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.7A, VGS = 0V
TJ = 25°C, I F = -5.5A
di/dt = -100A/µs ‚
D
S
ƒ
Notes:
 Repetitive rating; pulse width limited by
ƒ Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. ( See fig. 11 )
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Starting TJ = 25°C, L = 1.8mH
RG = 25Ω, IAS = -5.5A. (See Figure 12)
2
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IRLMS4502
1000
100
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
100
10
-2.25V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
10
-2.25V
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
100
TJ = 25 ° C
TJ = 150 ° C
V DS = -15V
20µs PULSE WIDTH
4.0
5.0
6.0
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
1000
3.0
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
-VGS , Gate-to-Source Voltage (V)
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
100
-VDS , Drain-to-Source Voltage (V)
10
2.0
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
7.0
ID = -5.5A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLMS4502
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance(pF)
2200
Ciss
1800
1400
Coss
Crss
15
-VGS , Gate-to-Source Voltage (V)
2600
ID = -5.5A
VDS =-10V
12
9
6
3
1000
1
10
0
100
0
10
20
30
40
QG , Total Gate Charge (nC)
-V DS, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-II D , Drain Current (A)
10us
TJ = 150 ° C
10
TJ = 25 ° C
1
0.1
0.4
V GS = 0 V
0.6
0.8
1.0
1.2
1.4
1.6
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1.8
100us
10
1ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
10ms
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLMS4502
80
EAS , Single Pulse Avalanche Energy (mJ)
6.0
-ID , Drain Current (A)
5.0
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
ID
-2.5A
-4.4A
BOTTOM -5.5A
TOP
60
40
20
0
25
150
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
TC , Case Temperature ( ° C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRLMS4502
Micro6 Package Outline
3.00 (.118 )
2.80 (.111 )
1.75 (.068 )
1.50 (.060 )
-A-
6
5
LEAD ASSIGNMENTS
2
D
S
6
5
4
1
2
3
D
D
G
2X 0.95 (.0375 )
6X (1.06 (.042 )
3
0.95 ( .0375 )
6X
2X
D
4
3.00 (.118 )
2.60 (.103 )
1
RECOMMENDED FOOTPRINT
-B-
2.20 (.087 )
0.50 (.019 )
0.35 (.014 )
6X 0.65 (.025 )
0.15 (.006 ) M C A S B S
O
O
0 -10
1.30 (.051 )
0.90 (.036 )
6X
1.45 (.057 )
0.90 (.036 )
-C-
0.10 (.004 )
6 SURFACES
0.15 (.006 )
MAX.
0.20 (.007 )
0.09 (.004 )
0.60 (.023 )
0.10 (.004 )
NOTES :
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : MILLIMETER.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
Micro6 Tape & Reel Information
8mm
4mm
FEED DIRECTION
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
6
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IRLMS4502
Micro6 Part Marking Information
Notes: This part marking information applies to devices produced before 02/26/2001
EXAMPLE: THIS IS AN IRLMS6702
WW = (1-26) IF PRECEDED BY L AST DIGIT OF CALENDAR YEAR
PART NUMBER
DATE
CODE
TOP
WAFER LOT
NUMBER CODE
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
BOT TOM
WW = (27-52) IF PRECEDED BY A LETT ER
PART NUMBER CODE REFERENCE:
2A =
2B =
2C =
2D =
2E =
2F =
2G =
2H =
IRLMS 1902
IRLMS 1503
IRLMS 6702
IRLMS 5703
IRLMS 6802
IRLMS 4502
IRLMS 2002
IRLMS 6803
DAT E CODE EXAMPLES:
YWW = 9603 = 6C
YWW = 9632 = FF
WORK
WEEK
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
W
27
28
29
30
A
B
C
D
50
51
X
Y
Notes: This part marking information applies to devices produced after 02/26/2001
W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
Y = YEAR
W = WEEK
PART NUMBER
TOP
LOT
CODE
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
PART NUMBER CODE REFERENCE:
A=
B=
C=
D=
E=
F=
G=
H=
IRLMS 1902
IRLMS 1503
IRLMS 6702
IRLMS 5703
IRLMS 6802
IRLMS 4502
IRLMS 2002
IRLMS 6803
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A L ET TER
YEAR
Y
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/03
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7