TCLT11.. Series Vishay Semiconductors Optocoupler, Phototransistor Output, SOP-6L5, Half Pitch, Long Mini-Flat Package Features • • • • • • • • • SMD Low profile 5 pin package Isolation Test Voltage 5000 VRMS CTR flexibility available see order information Special construction Extra low coupling capacitance Connected base DC input with transistor output Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 5 4 3 17296 1 2 C V D E e3 Pb Pb-free Agency Approvals Description • UL1577, File No. E76222 System Code W, Double Protection • CSA 93751 • BSI IEC60950 IEC60065 • DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending • FIMKO • NOTE: See the Safety Standard Approval List "Agency Table" for more detailed information. The TCLT11.. Series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 5-lead SOP5L package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements. Applications Switchmode power supplies Computer peripheral interface Microprocessor system interface Order Information Part Remarks TCLT1100 CTR 50 - 600 %, SMD-5 TCLT1102 CTR 63 - 125 %, SMD-5 TCLT1103 CTR 100 - 200 %, SMD-5 TCLT1105 CTR 50 - 150 %, SMD-5 TCLT1106 CTR 100 - 300 %, SMD-5 TCLT1107 CTR 80 - 160 %, SMD-5 TCLT1108 CTR 130 - 260 %, SMD-5 TCLT1109 CTR 200 - 400 %, SMD-5 NOTE: Available only on tape and reel. Document Number 83514 Rev. 1.8, 03-Dec-04 www.vishay.com 1 TCLT11.. Series Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter VR 6 V Forward current IF 60 mA IFSM 1.5 A Pdiss 100 mW Tj 125 °C Forward surge current Test condition tp ≤ 10 µs Power dissipation Junction temperature Unit Output Symbol Value Unit Collector emitter voltage Parameter Test condition VCEO 70 V Emitter collector voltage VECO 7 V IC 50 mA ICM 100 mA Pdiss 150 mW Tj 125 °C Symbol Value Unit VISO 5000 VRMS Collector current Collector peak current tp/T = 0.5, tp ≤ 10 ms Power dissipation Junction temperature Coupler Parameter Test condition Isolation test voltage (RMS) Total power dissipation Ptot 250 mW Operating ambient temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature Tsld 240 °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Typ. Max Forward voltage Parameter IF = ± 50 mA Test condition Symbol VF Min 1.25 1.6 Junction capacitance VR = 0 V, f = 1 MHz Cj 50 Unit V pF Output Parameter Symbol Min IC = 1 mA VCEO 70 Emitter collector voltage IE = 100 µA VECO 7 Collector-emitter cut-off current VCE = 20 V, If = 0, E = 0 ICEO Collector emitter voltage www.vishay.com 2 Test condition Typ. Max Unit V V 10 100 nA Document Number 83514 Rev. 1.8, 03-Dec-04 TCLT11.. Series Vishay Semiconductors Coupler Parameter Test condition Symbol Min Typ. Max Unit 0.3 V Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 110 kHz Coupling capacitance f = 1 MHz Ck 0.3 pF Current Transfer Ratio Parameter IC/IF Part Symbol Min Max Unit VCE = 5 V, IF = 5 mA Test condition TCLT1100 CTR 50 600 % VCE = 5 V, IF = 10 mA TCLT1102 CTR 63 125 % TCLT1103 CTR 100 200 % TCLT1102 CTR 22 TCLT1103 CTR 34 70 % TCLT1104 CTR 56 100 % TCLT1105 CTR 50 150 % TCLT1106 CTR 100 300 % TCLT1107 CTR 80 160 % TCLT1108 CTR 130 260 % TCLT1109 CTR 200 400 % VCE = 5 V, IF = 1 mA VCE = 5 V, IF = 5 mA Typ. 45 % Maximum Safety Ratings (according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-5-5 pending) see figure 1 This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Input Parameter Test condition Forward current Symbol Min Typ. IF Max Unit 130 mA Max Unit 265 mW Output Parameter Test condition Power dissipation Symbol Min Typ. Pdiss Coupler Parameter Rated impulse voltage Safety temperature Document Number 83514 Rev. 1.8, 03-Dec-04 Test condition Symbol Max Unit VIOTM Min Typ. 8 kV Tsi 150 °C www.vishay.com 3 TCLT11.. Series Vishay Semiconductors Insulation Rated Parameters Parameter Test condition Symbol Min Vpd 1.6 kV VIOTM 8 kV Vpd 1.3 kV VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 10 11 Ω VIO = 500 V, Tamb = 150 °C RIO 109 Ω Partial discharge test voltage Routine test 100 %, ttest = 1 s Partial discharge test voltage Lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) Insulation resistance Typ. Max Unit (construction test only) VIOTM t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s 4.8 4.4 VPd 1.40 1.27 VIOWM VIORM 0 13930 t3 ttest t4 t1 tTr = 60 s t2 tstres t 10 4 38 www.vishay.com 4 Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN EN 60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747 Document Number 83514 Rev. 1.8, 03-Dec-04 TCLT11.. Series Vishay Semiconductors Switching Characteristics Test condition Symbol Delay time Parameter VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) td Min Typ. 3.0 Max µs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) tr 3.0 µs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) ton 6.0 µs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) ts 0.3 µs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) tf 4.7 µs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 3) toff 5.0 µs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kΩ (see figure 4) ton 9.0 µs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 kΩ (see figure 4) toff 10.0 µs IF 0 +5V IF IF IC = 2 mA; adjusted through input amplitude RG = 50 W tp = 0.01 T tp = 50 Ps Channel I Channel II 50 W 100 W Oscilloscope RL = 1 MW CL = 20 pF Figure 3. Test circuit, non-saturated operation 0 IF IF = 10 mA 96 11698 0 IC tp t 100% 90% 10% 0 tp td tr ton (= td + tr) 95 10804 Unit tr td ton ts pulse duration delay time rise time turn-on time ts tf toff (= ts + tf) t tf toff storage time fall time turn-off time Figure 5. Switching Times +5V IC RG = 50 Ω tp = 0.01 T tp = 50 µs Channel I Channel II 50 Ω 1 kΩ Oscilloscope RL≥ 1M Ω CL ≤ 20 pF 95 10843 Figure 4. Test circuit, saturated operation Document Number 83514 Rev. 1.8, 03-Dec-04 www.vishay.com 5 TCLT11.. Series Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10000 I CEO - Collector Dark Current, with open Base ( nA ) P tot –Total Power Dissipation ( mW) 300 Coupled device 250 200 Phototransistor 150 IR-diode 100 50 V CE = 20 V IF = 0 1000 100 10 1 0 0 40 80 Tamb – Ambient Temperature( °C ) 96 11700 0 120 25 Figure 6. Total Power Dissipation vs. Ambient Temperature 50 100 75 Tamb - Ambient Temperature ( ° C ) 95 11026 Figure 9. Collector Dark Current vs. Ambient Temperature 100 IC – Collector Current ( mA ) I F - Forward Current ( mA ) 1000 100 10 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V F - Forward Voltage ( V ) 10 1 0.1 0.01 0.1 0.1 96 11862 V CE=5V 20mA V CE=5V I F=5mA IC – Collector Current ( mA) CTRrel – Relative Current Transfer Ratio 100 1.5 1.0 0.5 0 –25 0 25 50 75 Tamb – Ambient Temperature ( °C ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature www.vishay.com 6 Figure 10. Collector Current vs. Forward Current 2.0 95 11025 100 10 I F – Forward Current ( mA ) 95 11027 Figure 7. Forward Current vs. Forward Voltage 1 I F=50mA 10mA 10 5mA 2mA 1 1mA 0.1 0.1 95 10985 1 100 10 V CE – Collector Emitter Voltage ( V ) Figure 11. Collector Current vs. Collector Emitter Voltage Document Number 83514 Rev. 1.8, 03-Dec-04 TCLT11.. Series 1.0 ton / toff –Turn on / Turn off Time ( µ s ) VCEsat– Collector Emitter Saturation Voltage (V) Vishay Semiconductors 20% 0.8 CTR=50% 0.6 0.4 0.2 10% Saturated Operation V S=5V RL=1k Ω 40 30 toff 20 10 0 ton 0 1 100 10 I C – Collector Current ( mA ) 95 11028 0 95 11031 Figure 12. Collector Emitter Saturation Voltage vs. Collector Current CTR – Current Transfer Ratio ( % ) 50 5 10 15 20 I F – Forward Current ( mA ) Figure 15. Turn on / off Time vs. Forward Current 1000 V CE=5V 100 10 1 0.1 1 100 10 I F – Forward Current ( mA ) 95 11029 ton / toff –Turn on / Turn off Time ( µ s ) Figure 13. Current Transfer Ratio vs. Forward Current 10 8 Non Saturated Operation V S=5V RL=100 Ω ton 6 toff 4 2 0 0 95 11030 2 4 6 10 I C – Collector Current ( mA ) Figure 14. Turn on / off Time vs. Collector Current Document Number 83514 Rev. 1.8, 03-Dec-04 www.vishay.com 7 TCLT11.. Series Vishay Semiconductors Package Dimensions in mm 15227 www.vishay.com 8 Document Number 83514 Rev. 1.8, 03-Dec-04 TCLT11.. Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83514 Rev. 1.8, 03-Dec-04 www.vishay.com 9