Si2321DS New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 D TrenchFETr Power MOSFETS rDS(on) (W) ID (A) 0.057 @ VGS = - 4.5 V - 3.3 0.076 @ VGS = - 2.5 V - 2.8 0.110 @ VGS = - 1.8 V - 2.3 APPLICATIONS D Load Switch D PA Switch TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2321DS-T1 2 Top View Si2321DS *(D1) *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA= 25_C TA= 70_C Pulsed Drain Currenta IS TA= 25_C Power Dissipationa TA= 70_C Operating Junction and Storage Temperature Range PD - 2.9 - 2.6 IDM Continuous Source Current (Diode Conduction)a V - 3.3 ID - 2.3 A - 12 - 0.74 - 0.59 0.89 0.71 0.57 0.45 TJ, Tstg Unit W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t 5 sec. M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 115 140 140 175 60 75 Unit _C/W Notes a. Surface Mounted on FR4 Board. b. t v5 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72210 S-03986—Rev. A, 19-May-03 www.vishay.com 1 Si2321DS New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS = 0 V, ID = - 10 mA - 20 VGS(th) VDS = VGS, ID = - 250 mA - 0.40 IGSS VDS = 0 V, VGS = "8 V "100 VDS = 16 V, VGS = 0 V -1 VDS = 16 V, VGS = 0 V, TJ = 55_C - 10 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage VDS v - 5 V, VGS = - 4.5 V - 0.90 -6 nA mA A VGS = - 4.5 V, ID = - 3.3 A 0.044 0.057 VGS = - 2.5 V, ID = - 2.8 A 0.061 0.076 VGS = - 1.8 V, ID = - 2.3 A 0.084 0.110 gfs VDS = - 5 V, ID = - 3.3 A 3 VSD IS = - 1.6 A, VGS = 0 V rDS(on) ( ) V W S - 1.2 V Dynamicb Total Gate Charge Qg 8 VDS = - 6 V, VGS = - 4.5 V ID ^ - 3.3 A 13 Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.2 Input Capacitance Ciss 715 Output Capacitance Coss Reverse Transfer Capacitance Crss 120 td(on) 15 25 35 55 60 90 40 60 VDS = - 6 V, VGS = 0, f = 1 MHz 1.2 nC 170 pF Switchingb Turn On Time Turn-On Turn-Off Time tr td(off) VDD = - 6 V, RL = 6 W ID ^ - 1.0 10A A, VGEN = - 4.5 45V RG = 6 W tf ns Notes a. b. c. For DESIGN AID ONLY, not subject to production testing. Pulse test: PW v300 ms duty cycle v2%. Switching time is essentially independent of operating temperature. www.vishay.com 2 Document Number: 72210 S-03986—Rev. A, 19-May-03 Si2321DS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 12 12 2V VGS = 4.5 thru 2.5 V 10 I D - Drain Current (A) I D - Drain Current (A) 10 8 6 1.5 V 4 2 8 6 4 TC = 125_C 2 0.5 V 0 0.0 0.4 0.8 25_C 1.0 V 1.2 1.6 - 55_C 0 0.0 2.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 On-Resistance vs. Drain Current 2.5 Capacitance 1200 0.25 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 2.0 VGS - Gate-to-Source Voltage (V) 0.30 0.20 0.15 VGS = 1.8 V 0.10 VGS = 2.5 V 900 Ciss 600 300 Coss 0.05 Crss VGS = 4.5 V 0.00 0 0 2 4 6 8 10 0 12 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge Normalized On-Resistance vs. Junction Temperature 5 1.5 VDS = 10 V ID = 3.3 A 4 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 1.5 3 2 1 0 0 2 4 6 Qg - Total Gate Charge (nC) Document Number: 72210 S-03986—Rev. A, 19-May-03 8 10 1.3 VGS = 4.5 V ID = 3.3 A 1.1 0.9 0.7 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si2321DS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 20 TJ = 150_C r DS(on) - On-Resistance ( W ) I S - Source Current (A) 10 TJ = 25_C 1 0.3 0.2 ID = 3.3 A 0.1 0.0 0.1 0.0 0.4 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 10 ID = 250 mA 0.3 8 0.2 Power (W) V GS(th) Variance (V) 3 0.1 6 4 0.0 TA = 25_C 2 - 0.1 - 0.2 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area 100 Limited by rDS(on) I D - Drain Current (A) 10 100 ms, 10 ms 1 1 ms 10 ms 100 ms 0.1 TA = 25_C Single Pulse dc, 100 s, 10 s, 1 s 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72210 S-03986—Rev. A, 19-May-03 Si2321DS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72210 S-03986—Rev. A, 19-May-03 www.vishay.com 5