ONSEMI MMBFJ309

ON Semiconductor
JFET - VHF/UHF Amplifier
Transistor
MMBFJ309LT1
MMBFJ310LT1
N–Channel
3
MAXIMUM RATINGS
1
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDS
25
Vdc
Gate–Source Voltage
VGS
25
Vdc
IG
10
mAdc
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RJA
556
°C/W
TJ, Tstg
–55 to +150
°C
Gate Current
2
CASE 318–08, STYLE 10
SOT–23 (TO–236AB)
2 SOURCE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
3
GATE
1 DRAIN
DEVICE MARKING
MMBFJ309LT1 = 6U; MMBFJ310LT1 = 6T
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
V(BR)GSS
–25
–
–
Vdc
IGSS
–
–
–
–
–1.0
–1.0
nAdc
µAdc
MMBFJ309
MMBFJ310
VGS(off)
–1.0
–2.0
–
–
–4.0
–6.5
Vdc
MMBFJ309
MMBFJ310
IDSS
12
24
–
–
30
60
mAdc
VGS(f)
–
–
1.0
Vdc
Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
|Yfs|
8.0
–
18
mmhos
Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
|yos|
–
–
250
µmhos
Input Capacitance (VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Ciss
–
–
5.0
pF
Reverse Transfer Capacitance (VGS = –10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Crss
–
–
2.5
pF
en
–
10
–
nV Hz
Characteristic
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = –1.0 µAdc, VDS = 0)
Gate Reverse Current (VGS = –15 Vdc)
Gate Reverse Current (VGS = –15 Vdc, TA = 125°C)
Gate Source Cutoff Voltage
(VDS = 10 Vdc, ID = 1.0 nAdc)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 10 Vdc, VGS = 0)
Gate–Source Forward Voltage (IG = 1.0 mAdc, VDS = 0)
SMALL–SIGNAL CHARACTERISTICS
Equivalent Short–Circuit Input Noise Voltage
(VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz)
1. FR–5 = 1.0 0.75 0.062 in.
 Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 2
1
Publication Order Number:
MMBFJ309LT1/D
70
70
I D , DRAIN CURRENT (mA)
60
VDS = 10 V
50
50
+25°C
IDSS
+25°C
40
60
TA = -55°C
40
30
30
+150°C
20
20
+25°C
-55°C
10
-5.0
10
+150°C
-1.0
-4.0
-3.0
-2.0
ID - VGS, GATE-SOURCE VOLTAGE (VOLTS)
IDSS - VGS, GATE-SOURCE CUTOFF VOLTAGE (VOLTS)
0
IDSS, SATURATION DRAIN CURRENT (mA)
MMBFJ309LT1 MMBFJ310LT1
0
Figure 1. Drain Current and Transfer
Characteristics versus Gate–Source Voltage
Yfs
10 k
100
1.0 k
Yos
100
0.01
VGS(off) = -2.3 V =
VGS(off) = -5.7 V =
10
1.0
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
ID, DRAIN CURRENT (mA)
RDS
7.0
72
Cgs
4.0
48
24
Cgd
1.0
0
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Common–Source Output
Admittance and Forward Transconductance
versus Drain Current
Figure 3. On Resistance and Junction
Capacitance versus Gate–Source Voltage
http://onsemi.com
2
96
0
0
R DS , ON RESISTANCE (OHMS)
Yfs
120
10
1.0 k
Yos, OUTPUT ADMITTANCE (µ mhos)
CAPACITANCE (pF)
Yfs , FORWARD TRANSCONDUCTANCE (µmhos)
100 k
MMBFJ309LT1 MMBFJ310LT1
24
VDS = 10 V
ID = 10 mA
TA = 25°C
0
100
1.2
0.73 0.33
0.67 0.27
200
300
500
f, FREQUENCY (MHz)
700
θ21, θ11
180° 50°
30°
150°
20°
140°
10°
0.036 0.96
0.024 0.94
1000
-40°
200
300
500
f, FREQUENCY (MHz)
700 1000
θ11, θ12
-20° 120°
86°
-40° 100°
85°
-60°
80°
84°
-80°
60°
83°
-100°
40°
82°
-120°
20°
100
θ21, θ22
0
θ11
θ21
θ22
-20°
-60°
-80°
-40°
-100°
130°
0°
100
-120°
θ12
θ11
-140°
VDS = 10 V
ID = 10 mA
TA = 25°C
200
300
500
f, FREQUENCY (MHz)
-160°
-180°
700
-200°
1000
0.90
Figure 5. Common–Gate S Parameter
Magnitude versus Frequency
-20°
θ21
0.012 0.92
0.55 0.15
100
θ12, θ22
-20° 87°
θ22
160°
VDS = 10 V
ID = 10 mA
TA = 25°C
S12
Y12
40°
0.048 0.98
0.61 0.21
0.6
Figure 4. Common–Gate Y Parameter
Magnitude versus Frequency
170°
S22
S11
Y22
6.0
0.79 0.39
1.8
Y21
12
2.4
|S12|, |S22|
0.060 1.00
S21
Y11
18
3.0
Y12 (mmhos)
|Y11|, |Y21 |, |Y22 | (mmhos)
30
|S21|, |S11|
0.85 0.45
Figure 6. Common–Gate Y Parameter
Phase–Angle versus Frequency
θ21
θ12
VDS = 10 V
ID = 10 mA
TA = 25°C
200
300
500
f, FREQUENCY (MHz)
θ11
700
-60°
-80°
-100°
1000
Figure 7. S Parameter Phase–Angle
versus Frequency
http://onsemi.com
3
MMBFJ309LT1 MMBFJ310LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the SOT–23 is a function of the
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature
of the die, RθJA, the thermal resistance from the device
junction to ambient, and the operating temperature, TA.
Using the values provided on the data sheet for the SOT–23
package, PD can be calculated as follows:
PD =
The melting temperature of solder is higher than the
rated temperature of the device. When the entire device is
heated to a high temperature, failure to complete soldering
within a short time could result in device failure. Therefore, the following items should always be observed in
order to minimize the thermal stress to which the devices
are subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage
to the device.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT–23 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
http://onsemi.com
4
MMBFJ309LT1 MMBFJ310LT1
PACKAGE DIMENSIONS
SOT–23 (TO–236AB)
CASE 318–08
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
1
V
B S
2
G
C
D
H
K
J
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
http://onsemi.com
5
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
MMBFJ309LT1 MMBFJ310LT1
Notes
http://onsemi.com
6
MMBFJ309LT1 MMBFJ310LT1
Notes
http://onsemi.com
7
MMBFJ309LT1 MMBFJ310LT1
SENSEFET is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
http://onsemi.com
8
MMBFJ309LT1/D