Si2309DS Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -60 rDS(on) (W) ID (A) 0.340 @ VGS = -10 V - 1.25 0.550 @ VGS = -4.5 V -1 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2309DS (A9)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS -60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C) _ a, b TA = 25_C -1.25 TA = 100_C -0.85 IDM L = 0.1 mH TA = 70_C Operating Junction and Storage Temperature Range A -8 IAS -5 TA = 25_C Maximum Power Dissipationa, b V ID Pulsed Drain Current Avalanche Current Unit 1.25 PD W 0.8 TJ, Tstg _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol Typical t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Leada Steady State Steady State Maximum Unit 100 RthJA RthJL 130 166 45 60 _C/W C/W Notes a. Surface Mounted on FR4 Board. b. t v 5 sec. Document Number: 70835 S-21339—Rev. B, 05-Aug-02 www.vishay.com 2-1 Si2309DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min V(BR)DSS VDS = 0 V, ID = -250 mA -60 VGS(th) VDS = VGS, ID = -250 mA -1 Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS = 0 V, VGS = "20 V "100 VDS = -48 V, VGS = 0 V -1 VDS = -48 V, VGS = 0 V, TJ = 125_C -50 VDS w -4.5 V, VGS = -10 V -6 A 0.275 0.340 VGS = -4.5 V, ID = -1 A 0.406 0.550 VDS = -4.5 V, ID = -1 A 1.9 VDS = -30 V, VGS = -10 V, ID = -1.25 A 1.15 gfs nA m mA VGS = -10 V, ID = -1.25 A rDS(on) Forward Transconductancea V W S Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.92 Turn-On Delay Time td(on) 10.5 20 tr 11.5 20 15.5 30 7.5 15 Rise Time Turn-Off Delay Time 5.4 VDD = -30 V, RL = 30 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W td(off) Fall Time tf 12 nC ns Source-Drain Rating Characteristicsb Continuous Current IS -1.25 Pulsed Current ISM -8 Diode Forward Voltagea VSD IS = -1.25 A, VGS = 0 V -0.82 -1.2 V trr IF = -1.25 A, di/dt = 100 A/ms 30 55 ns Source-Drain Reverse Recovery Time A Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 6 8 TC = -55_C VGS = 10 thru 6 V 5 5V 25_C I D - Drain Current (A) I D - Drain Current (A) 6 4 4V 2 3 125_C 2 1 1, 2 V 3V 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) www.vishay.com 2-2 4 10 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Document Number: 70835 S-21339—Rev. B, 05-Aug-02 Si2309DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 500 1.2 400 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 1.5 0.9 VGS = 4.5 V 0.6 VGS = 10 V Ciss 300 200 Coss 0.3 100 Crss 0.0 0 0 2 4 6 8 0 6 Gate Charge r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 30 VGS = 10 V ID = 1.25 A 1.8 6 4 2 1.6 1.4 1.2 1.0 0.8 0 0 1 2 3 4 5 0.6 -50 6 -25 0 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 1.0 r DS(on) - On-Resistance ( W ) TJ = 150_C 1 TJ = 25_C 0.8 0.6 ID = 1.25 A 0.4 0.2 0.0 0.1 0.00 25 TJ - Junction Temperature (_C) 10 I S - Source Current (A) 24 On-Resistance vs. Junction Temperature 2.0 VDS = 30 V ID = 1.25 A 8 18 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 10 12 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) Document Number: 70835 S-21339—Rev. B, 05-Aug-02 1.0 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) www.vishay.com 2-3 Si2309DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.6 12 ID = 250 mA 10 8 Power (W) V GS(th) Variance (V) 0.4 0.2 0.0 6 TA = 25_C 4 -0.2 2 -0.4 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 TJ - Temperature (_C) 10 100 500 Time (sec) Safe Operating Area, Junction-to-Ambient 100 I D - Drain Current (A) 10 1 10 ms 100 ms Limited by rDS(on) 1 ms 0.1 10 ms TA = 25_C Single Pulse 100 ms dc, 100 s, 10 s, 1 s 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 130_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 500 Square Wave Pulse Duration (sec) www.vishay.com 2-4 Document Number: 70835 S-21339—Rev. B, 05-Aug-02