MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9210/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9210R3 Freescale Semiconductor, Inc... N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 26 volt base station equipment. • Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 950 mA IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 40 Watts Power Gain — 16.5 dB Efficiency — 25.5% Adjacent Channel Power — 750 kHz: - 46.2 dBc @ 30 kHz BW 1.98 MHz: - 60 dBc @ 30 kHz BW • Internally Matched, Controlled Q, for Ease of Use • Integrated ESD Protection 880 MHz, 200 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts Avg. N - CDMA • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. CASE 375G - 04, STYLE 1 NI - 860C3 MAXIMUM RATINGS Symbol Value Unit Drain - Source Voltage Rating VDSS 65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 565 3.2 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit RθJC 0.31 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Class 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) (1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 For More Information On This Product, Go to: www.freescale.com MRF9210R3 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) IDSS — — 1 µAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 330 µAdc) VGS(th) 1.5 2.8 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 800 mAdc) VGS(Q) 2.5 3.3 4.5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) VDS(on) — 0.2 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6.7 Adc) gfs — 8.8 — S Crss — 3.6 — pF OFF CHARACTERISTICS (1) Freescale Semiconductor, Inc... ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier, Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF N - CDMA Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz) Gps 15.8 16.5 — dB N - CDMA Drain Efficiency (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz) η 23 25.5 — % Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth, 750 kHz Channel Spacing) ACPR — - 46.2 - 45 dBc Input Return Loss (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz) IRL 9 17.5 — dB N - CDMA Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 865 MHz and 895 MHz) Gps — 16.5 — dB N - CDMA Drain Efficiency (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 865 MHz and 895 MHz) η — 25.5 — % ACPR — - 47.5 — dBc IRL — 15 — dB Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 865 MHz and 895 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth, 750 kHz Channel Spacing) Input Return Loss (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 865 MHz and 895 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 40 W Avg. N - CDMA, IDQ = 2 x 950 mA, f = 880 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power (1) Each side of device measured separately. (2) Device measured in push - pull configuration. MRF9210R3 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Table 1. 880 MHz Test Circuit Component Designations and Values Freescale Semiconductor, Inc... Part Description Value, P/N or DWG Manufacturer B1, B2 11 Ω RF Beads, Surface Mount (0805) 2508051107Y0 Fair - Rite Balun 1, Balun 2 0.8 - 1 GHz Xinger Balun 3A412 Anaren C1 27 pF Chip Capacitor, B Case 100B270JP500X ATC C2 12 pF Chip Capacitor (0603) 06035J120GBT AVX / Kyocera C3, C4 3.3 pF Chip Capacitors (0603) 06035J3R3BBT AVX / Kyocera C5 9.1 pF Chip Capacitor, R Case 180R8R2JW500X ATC C6 4.3 pF Chip Capacitor, B Case 100B4R3CP500X ATC C7 0.4 - 2.5 pF Variable Capacitor 27283PC Gigatronics C8 12 pF Chip Capacitor, B Case 100B120JP500X ATC C9, C10 470 µF, 63 V Electrolytic Capacitors NACZF471M63V (18x22) Nippon C11, C12, C13, C14 22 µF, 35 V Tantalum Chip Capacitors T491X226K035AS Kemet C15, C17, C19, C21 0.01 µF, 100 V Chip Capacitors C1825C103J1GAC Kemet C16, C18 0.56 µF, 50 V Chip Capacitors C1825C564J5GAC Kemet C20, C22 2.2 µF, 50 V Chip Capacitors C1825C225J5RAC3810 Kemet C23, C24 47 µF, 16 V Tantalum Chip Capacitors TPSD476K016R0150 AVX L1 12 nH Inductor (0603) 0603HC- 12NHJBU Coilcraft L2 22 nH Inductor B07T - 5 Coilcraft L3, L4 12.5 nH Inductors A04T - 5 Coilcraft L5, L6 10 nH Inductors (0603) 0603HC- 10NHJBU Coilcraft PCB Gate 30 mil, εr = 2.56 DS0928 DS Electronics PCB Drain 30 mil, εr = 2.56 DS0978 DS Electronics R1, R2 24 Ω, 1/8 W Chip Resistors Dale Vishay MRF9210 Gate MRF9210 Drain C14 C13 VGG VDD C16 C22 C23 C21 Balun 1 L6 C15 B1 R1 C9 C3 C6 C2 C1 Balun 2 L3 C5 L1 C8 C7 L2 R2 L4 C17 C4 C19 C24 B2 C10 C20 L5 C18 VGG C12 C11 VDD MRF9210 Rev 3 Figure 1. 880 MHz Test Circuit Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9210R3 3 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS G ps , POWER GAIN (dB) 28 Gps 16 26 η 15 14 13 24 VDD = 26 Vdc Pout = 40 W (Avg.) IDQ = 1900 mA N−CDMA IS−95 Pilot, Sync, Paging Traffic Codes 8 Through 13 IRL 12 22 −30 −10 −35 −15 11 −40 10 −45 ACPR 9 8 860 −50 865 870 875 880 885 890 895 −20 −25 −30 −55 900 −35 IRL, INPUT RETURN LOSS (dB) 17 h , DRAIN EFFICIENCY (%) 30 ACPR (dBc) 18 Figure 2. Class AB Broadband Circuit Performance VDD = 26 Vdc f1 = 879.95 MHz, f2 = 880.05 MHz 17 IDQ = 2200 mA 16.5 1900 mA 16 1600 mA 15.5 1300 mA 15 14.5 −20 VDD = 26 Vdc f1 = 879.95 MHz, f2 = 880.05 MHz −30 −40 −50 IDQ = 1300 mA 1900 mA −60 2200 mA 1600 mA −70 1 10 100 1 Figure 3. Power Gain versus Output Power Figure 4. Intermodulation Distortion versus Output Power G ps , POWER GAIN (dB) VDD = 26 Vdc IDQ = 1900 mA f1 = 879.5 MHz, f2 = 880.05 MHz −30 −40 −50 3rd Order −60 5th Order −70 22 60 20 50 18 40 Gps 16 30 14 20 VDD = 26 Vdc IDQ = 1900 mA f = 880 MHz 12 7th Order −80 100 Pout, OUTPUT POWER (WATTS) PEP −10 −20 10 Pout, OUTPUT POWER (WATTS) PEP η −90 10 1 10 100 10 0 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) AVG. Figure 5. Intermodulation Distortion Products versus Output Power Figure 6. Power Gain and Efficiency versus Output Power MRF9210R3 4 η, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) 17.5 IMD, INTERMODULATION DISTORTION (dBc) Freescale Semiconductor, Inc... f, FREQUENCY (MHz) MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. 20 60 18 40 Gps 16 20 η 14 0 VDD = 26 Vdc IDQ = 1900 mA f1 = 879.5 MHz, f2 = 880.05 MHz 12 −20 10 −40 IMD 8 −60 1 10 η, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS 100 20 40 G ps , POWER GAIN (dB) 18 20 Gps 16 0 η VDD = 26 Vdc, IDQ = 1900 mA f = 880 MHz N−CDMA IS−95 Pilot, Sync, Paging Traffic Codes 8 Through 13 14 12 −20 −40 ACPR 750 kHz 10 −60 ALT 1.98 MHz 8 −80 1 10 η, DRAIN EFFICIENCY (%) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Figure 7. Power Gain, Efficiency and IMD versus Output Power 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 8. N - CDMA Performance Output Power versus Gain, ACPR, Efficiency 80 4.8 0 70 −10 −20 60 1.23 MHz BW −ACPR @ 30 kHz BW +ACPR @ 30 kHz BW −ALT @ 30 kHz BW +ALT @ 30 kHz BW −30 50 (dB) Pout , OUTPUT POWER (WATTS) AVG. Freescale Semiconductor, Inc... Pout, OUTPUT POWER (WATTS) PEP 40 −40 −50 −60 30 VDD = 26 Vdc, IDQ = 1900 mA f = 880 MHz N−CDMA IS−95 Pilot, Sync, Paging Traffic Codes 8 Through 13 20 −70 −80 10 18 20 22 24 26 28 30 32 34 −90 −95.2 −2.5 −2.0 −1.5 −1.0 VDD, VOLTAGE (V) Figure 9. Single - Carrier Maximum N - CDMA Linear Output Power versus Drain Voltage MOTOROLA RF DEVICE DATA −0.5 0 0.5 1.0 1.5 2.0 2.5 f, FREQUENCY (MHz) Figure 10. Typical N - CDMA Spectrum For More Information On This Product, Go to: www.freescale.com MRF9210R3 5 Freescale Semiconductor, Inc. Zload * f = 865 MHz f = 895 MHz Zo = 10 Ω f = 865 MHz f = 895 MHz Freescale Semiconductor, Inc... Zsource VDD = 26 V, IDQ = 2 x 950 mA, Pout = 40 W Avg. N−CDMA f MHz Zsource Ω Zload Ω 865 4.19 - j6.71 8.43 - j3.83 880 3.69 - j6.18 8.12 - j3.85 895 3.17 - j5.85 7.84 - j4.08 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − − Z source Output Matching Network + Z load Figure 11. Series Equivalent Input and Output Impedance MRF9210R3 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... NOTES MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF9210R3 7 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS 4 G ccc R T A M B M Q bbb 2X L M J T A M M M (LID) 2 1 B NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H TO BE MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON 3M SCREW. (FLANGE) 5 4X S (INSULATOR) bbb Freescale Semiconductor, Inc... B M T A K 3 4X M B M 4 B D bbb M ccc T A M M B T A M DIM A B C D E F G H J K L M N Q R S bbb ccc M B M F N (LID) E M H bbb A C (INSULATOR) M T A M B M T SEATING PLANE INCHES MIN MAX 1.335 1.345 0.380 0.390 0.180 0.224 0.325 0.335 0.060 0.070 0.004 0.006 1.100 BSC 0.097 0.107 0.2125 BSC 0.135 0.165 0.425 BSC 0.852 0.868 0.851 0.869 0.118 0.138 0.395 0.405 0.394 0.406 0.010 REF 0.015 REF STYLE 1: PIN 1. 2. 3. 4. 5. A CASE 375G - 04 ISSUE E NI - 860C3 MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 4.57 5.69 8.26 8.51 1.52 1.78 0.10 0.15 27.94 BSC 2.46 2.72 5.397 BSC 3.43 4.19 10.8 BSC 21.64 22.05 21.62 22.07 3.00 3.30 10.03 10.29 10.01 10.31 0.25 REF 0.38 REF DRAIN DRAIN GATE GATE SOURCE Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. 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MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF9210R3 8 MOTOROLA RF DEVICE DATA ◊For More Information On This Product, Go to: www.freescale.com MRF9210/D