2SC2893 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI 2SC2893 is Designed for use in UHF amplifiers up to 400 MHz. A 45° C FEATURES: E B • POUT = 10.7 W Typical at 400 MHz • Omnigold™ Metallization System E B C D J E MAXIMUM RATINGS IC 1.5 A VCB 55 V G H K 32 V VCE 3.0 V VEB I F M A X IM U M D IM M IN IM U M in c h e s / m m in c h e s / m m A 1 .0 1 0 / 2 5 .6 5 1 .0 5 5 / 2 6 .8 0 B .2 2 0 / 5 .5 9 .2 3 0 /5 .8 4 C .2 7 0 / 6 .8 6 .2 8 5 / 7 .2 4 D .0 0 3 / 0 .0 8 .0 0 7 / 0 .1 8 E .1 1 7 / 2 .9 7 .1 3 7 / 3 .4 8 .5 7 2 / 1 4 . 5 3 F PDISS 22 W @ TC = 25 °C -65 °C to +150 °C θJC 8.0 °C/W CHARACTERISTICS .2 4 5 / 6 .2 2 .2 5 5 / 6 .4 8 .6 4 0 / 1 6 . 2 6 I -65 °C to +200 °C TSTG .1 3 0 / 3 .3 0 G H TJ # 8 -3 2 U N C J .1 7 5 / 4 .4 5 .2 1 7 / 5 .5 1 K .2 7 5 / 6 .9 9 .2 8 5 / 7 .2 4 TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 60 mA BVCES IC = 8.0 mA IEBO VCE = 2.0 V 500 µA ICBO VCB = 30 V 500 µA hFE VCE = 10 V 200 --- Cob VCB = 28 V 15 pF Pout VCE = 28 V ηc PIN = 0.63 W VBE = 0 V IC = 400 mA 32 V 55 V 20 10 f = 1.0 MHz IC = 400 mA f = 400 MHz 7.9 10.7 W 55 65 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV 0 1/1