Si2314EDS New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A) 0.033 @ VGS = 4.5 V 4.9 D TrenchFETr Power MOSFET D ESD Protected: 3000 V 0.040 @ VGS = 2.5 V 4.4 APPLICATIONS 0.051 @ VGS = 1.8 V 3.9 D LI-lon Battery Protection VDS (V) 20 FEATURES D TO-236 (SOT-23) G 3 kW 1 3 S G D 2 Top View Si2314EDS (C4)* S *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C) _ a Pulsed Drain TA= 25_C TA= 70_C Currentb ID Avalanche Currentb L = 0.1 mH Single Avalanche Energy Continuous Source Current (Diode Conduction)a 3.77 3.9 3.0 Power Dissipationa TA= 70_C IAS 15 EAS 11.25 Operating Junction and Storage Temperature Range PD A 15 IS TA= 25_C V 4.9 IDM mJ 1.0 A 1.25 0.75 0.80 0.48 TJ, Tstg Unit W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot Steady State Steady State RthJA RthJF Typical Maximum 75 100 120 166 40 50 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 71611 S-04683—Rev. B, 10-Sep-01 www.vishay.com 1 Si2314EDS New Product Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max Unit Static V(BR)DSS VGS = 0 V, ID = 250 mA 20 VGS(th) VDS = VGS, ID = 250 mA 0.45 Gate-Body Leakage IGSS VDS = 0 V, VGS = "4.5 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage "1.5 VDS = 16 V, VGS = 0 V 1 VDS = 16 V, VGS = 0 V, TJ = 70_C 75 VDS w 10 V, VGS = 4.5 V rDS(on) V 15 mA m A VGS = 4.5 V, ID = 5.0 A 0.027 0.033 VGS = 2.5 V, ID = 4.5 A 0.033 0.040 VGS = 1.8 V, ID = 4.0 A 0.042 0.051 gfs VDS = 15 V, ID = 5.0 A 40 VSD IS = 1.0 A, VGS = 0 V 0.8 1.2 11.0 14.0 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.1 td(on) 0.53 0.8 tr 1.4 2.2 13.5 20 1.5 VDS = 10 V, VGS = 4.5 V, ID = 5.0 A nC Switching Turn-On Delay Time Rise Time Turn-Off Delay Time VDD = 10 V, RL = 10 W ID ^ 1.0 A, VGEN = 4.5 V, RG = 6 W td(off) Fall-Time tf Source-Drain Reverse Recovery Time trr IF = 1.0 A, di/dt = 100 A/ms 5.9 9 13 25 m ms ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 1200 10,000 1,000 I GSS – Gate Current (mA) I GSS – Gate Current (mA) 1000 800 600 400 100 10 1 TJ = 150_C 0.1 TJ = 25_C 0.01 200 0.001 0 0.0001 0 2 4 6 8 VGS – Gate-to-Source Voltage (V) www.vishay.com 2 10 12 0.1 1 10 100 VGS – Gate-to-Source Voltage (V) Document Number: 71611 S-04683—Rev. B, 10-Sep-01 Si2314EDS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 15 15 VGS = 4.5 thru 2.0 V 12 I D – Drain Current (A) I D – Drain Current (A) 12 1.5 V 9 6 3 9 6 TC = 125_C 3 0.5 V 25_C 1.0 V 0 0 1 2 3 0 0.0 4 0.5 VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 0.12 1200 0.09 VGS = 1.8 V 2.0 Ciss 900 600 VGS = 2.5 V 0.03 300 Coss Crss VGS = 4.5 V 0.00 0 0 3 6 9 12 15 0 4 ID – Drain Current (A) 8 12 16 20 VDS – Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 1.6 8 VDS = 10 V ID = 5.0 A r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 1.5 Capacitance 1500 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 1.0 VGS – Gate-to-Source Voltage (V) 0.15 0.06 –55_C 6 4 2 VGS = 4.5 V ID = 5.0 A 1.4 1.2 1.0 0.8 0 0 4 8 12 Qg – Total Gate Charge (nC) Document Number: 71611 S-04683—Rev. B, 10-Sep-01 16 20 0.6 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) www.vishay.com 3 Si2314EDS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 20 r DS(on) – On-Resistance ( W ) I S – Source Current (A) 10 TJ = 150_C 1 TJ = 25_C 0.1 ID = 5.0 A 0.15 0.10 0.05 0.00 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD – Source-to-Drain Voltage (V) Threshold Voltage 6 8 Single Pulse Power 0.2 12 0.1 10 ID = 250 mA –0.0 Power (W) V GS(th) Variance (V) 4 VGS – Gate-to-Source Voltage (V) –0.1 8 TA = 25_C 6 –0.2 4 –0.3 2 –0.4 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 Time (sec) TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 166_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71611 S-04683—Rev. B, 10-Sep-01