MJW18020 Preferred Devices NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS’s for which the high reproducibility of DC and Switching parameters minimizes the dead time in bridge configurations. • • • • Mains features include: High and Excellent Gain Linearity Fast and Very Tight Switching Times Parameters tsi and tfi Very Stable Leakage Current due to the Planar Structure High Reliability http://onsemi.com 30 AMPERES 1000 VOLTS BVCES 450 VOLTS BVCEO 250 WATTS 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Sustaining Voltage VCEO 450 Vdc Collector–Base Breakdown Voltage VCES 1000 Vdc Collector–Base Voltage VCBO 1000 Vdc Emitter–Base Voltage VEBO 9.0 Vdc Collector Current – Continuous – Peak (Note 1.) IC 30 45 Adc Base Current – Continuous – Peak (Note 1.) IB 6.0 10 Adc Total Power Dissipation @ TC = 25C Derate Above 25C PD 250 2.0 Watts W/C TJ, Tstg –65 to +150 C Symbol Max Unit Thermal Resistance, Junction–to–Case RθJC 0.5 C/W Thermal Resistance, Junction–to–Ambient RθJA 50 C/W TL 275 Operating and Storage Junction Temperature Range Maximum Lead Temperature for Soldering Purposes: 1/8” from Case for 5 Seconds TO–247 CASE 340K STYLE 3 MARKING DIAGRAM MJW 18020 LLYWW 1 BASE 3 EMITTER 2 COLLECTOR MJW18020= Device Code LL = Location Code Y = Year WW = Work Week THERMAL CHARACTERISTICS Characteristic 3 ORDERING INFORMATION C Device Package Shipping MJW18020 TO–247 30 Units/Rail 1. Pulse Test: Pulse Width = 5 s, Duty Cycle ≤ 10%. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 January, 2002 – Rev. 0 1 Publication Order Number: MJW180203/D MJW18020 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 450 – – Vdc ICEO – – 100 µAdc ICES – – 100 500 µAdc IEBO – – 100 µAdc hFE 14 – 8 5 5.5 4 14 30 16 14 9 7 25 OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125°C) Emitter Cutoff Current (VCE = 9 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 3 Adc, VCE = 5 Vdc) (TC = 125°C) (IC = 10 Adc VCE = 2 Vdc) (TC = 125°C) (IC = 20 Adc VCE = 2 Vdc) (TC = 125°C) (IC = 10 mAdc VCE = 5 Vdc) Base–Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) (IC = 20 Adc, IB = 4 Adc) VBE(sat) 34 – – – – – – 0.97 1.15 1.25 1.5 – – – – 0.2 0.3 0.5 0.9 0.6 – 1.5 2.0 fT – 13 – MHz Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) Cob – 300 500 pF Input Capacitance (VEB = 8.0) Cib – 7000 9000 pF tOn – 540 750 ns Storage Time ts – 4.75 6 µs Fall Time tf – 380 500 ns tOff – 5.2 6.5 µs tOn – 965 1200 ns ts – 2.9 3.5 µs tf – 350 500 ns tOff – 3.25 4 µs Collector–Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) VCE(sat) (TC = 125°C) (IC = 20 Adc, IB = 4 Adc) (TC = 125°C) Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) SWITCHING CHARACTERISTICS: Resistive Load (D.C. = 10%, Pulse Width = 70 µs) Turn–On Time (IC = 10 Adc, IB1 = IB2 = 2 Adc, Vcc = 125 V) Turn–Off Time Turn–On Time Storage Time ((IC= 20 Adc,, IB1 = IB2 = 4 Adc,, V = 125 V) Vcc Fall Time Turn–Off Time SWITCHING CHARACTERISTICS: Inductive Load (Vclamp= 300 V , Vcc = 15 V, L = 200 µH) Fall Time (IC = 10 Adc, IB1 = IB2 = 2 Adc) tfi – 142 250 ns Storage Time tsi – 4.75 6 µs Crossover Time tc – 320 500 ns tfi – 350 500 ns Storage Time tsi – 3.0 3.5 µs Crossover Time tc – 500 750 ns Fall Time (IC = 20 Adc, IB1 = IB2 = 4 Adc) http://onsemi.com 2 MJW18020 TYPICAL CHARACTERISTICS 100 TJ = 25°C TJ = 125°C HFE, DC CURRENT GAIN HFE, DC CURRENT GAIN 100 TJ = –20°C 10 VCE = 2.0 V 1.0 0.01 0.1 1.0 10 TJ = –20°C 10 VCE = 5.0 V 1.0 0.01 100 0.1 100 Figure 1. DC Current Gain, VCE = 2.0 V Figure 2. DC Current Gain, VCE = 5.0 V 100.0 Ic/Ib = 10 VCE, VOLTAGE (VOLTS) VCE, VOLTAGE (VOLTS) 10 IC, COLLECTOR CURRENT (A) Ic/Ib = 5.0 10.0 10.0 1.0 TJ = –20°C TJ = 125°C 0.1 0.0 0.001 0.1 1.0 TJ = –20°C TJ = 125°C 0.1 TJ = 25°C TJ = 25°C 0.01 1.0 10 0.0 0.001 100 IC, COLLECTOR CURRENT (A) 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (A) Figure 3. Typical Collector–Emitter Saturation Voltage, IC/IB = 5.0 Figure 4. Typical Collector–Emitter Saturation Voltage, IC/IB = 10 10.0 10.0 Ic/Ib = 10 VBE, VOLTAGE (VOLTS) Ic/Ib = 5.0 VBE, VOLTAGE (VOLTS) 1.0 IC, COLLECTOR CURRENT (A) 100.0 TJ = –20°C 1.0 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 0.1 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) TJ = –20°C 1.0 TJ = 25°C TJ = 125°C 0.1 0.001 100 Figure 5. Typical Base–Emitter Saturation Voltage, IC/IB = 5.0 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) Figure 6. Typical Base–Emitter Saturation Voltage, IC/IB = 10 http://onsemi.com 3 100 MJW18020 TYPICAL CHARACTERISTICS IC, COLLECTOR CURRENT (AMPS) 100.00 Cib 1000 Cob 100 1 10 100 1.0 s Extended SOA DC 10.00 10000 10 s 5 ms 1 ms 1.00 0.10 0.01 10 100 1000 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 7. Typical Capacitance Figure 8. Forward Bias Safe Operating Area 40 IC, COLLECTOR CURRENT (AMPS) C, CAPACITANCE (pF) 100000 TC 125°C Ic/Ib > 4 LC = 500 H 30 20 –1.5 V 10 –5 V VBE = 0 V 0 0 200 400 600 800 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 9. Reverse Bias Safe Operating Area http://onsemi.com 4 1000 MJW18020 PACKAGE DIMENSIONS TO–247 CASE 340K–01 ISSUE C 0.25 (0.010) M –T– –Q– T B M E –B– C L U A R 1 K 2 3 –Y– P V H F D 0.25 (0.010) M 4 Y Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. J G S DIM A B C D E F G H J K L P Q R U V MILLIMETERS MIN MAX 19.7 20.3 15.3 15.9 4.7 5.3 1.0 1.4 1.27 REF 2.0 2.4 5.5 BSC 2.2 2.6 0.4 0.8 14.2 14.8 5.5 NOM 3.7 4.3 3.55 3.65 5.0 NOM 5.5 BSC 3.0 3.4 STYLE 3: PIN 1. 2. 3. 4. http://onsemi.com 5 INCHES MIN MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 0.144 0.197 NOM 0.217 BSC 0.118 0.134 BASE COLLECTOR EMITTER COLLECTOR MJW18020 Notes http://onsemi.com 6 MJW18020 Notes http://onsemi.com 7 MJW18020 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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