FAIRCHILD SGL60N90D

SGL60N90D
IGBT CO-PAK
FEATURES
TO-264
* High Speed Switching
* Low Saturation Voltage
: VCE(sat) = 2.7 V (at IC=60A)
* High Input Impedance
1
APPLICATIONS
C
* Home Appliance
- Induction Heater
- IH JAR
- Micro Wave Oven
G
E
ABSOLUTE MAXIMUM RATINGS
Symbol
Characteristics
Rating
Unit
VCES
Collector-Emitter Voltage
900
V
VGE
Gate - Emitter Voltage
±25
V
IC
Continuous Collector Current
ICM (1)
Pulsed Collector Current
PD
Maximum Power Dissipation
TJ
Operating Junction Temperature
TSTG
Storage Temperature Range
TL
Soldering maximum lead temperature
TC = 25°C
60
TC = 100°C
42
120
TC = 25°C
200
TC = 100°C
120
(1/8” from case for 10 seconds)
A
A
W
-55 ~ 150
°C
300
°C
Notes:(1) Repetitive rating : Pulse with limited by max. junction temperature
Rev.B
1999 Fairchild Semiconductor Corporation
IGBT CO-PAK
SGL60N90D
ELECTRICAL CHARACTERISTICS (TC=25°C)
Symbol
Characteristics
Test Conditions
Min Typ
Max Units
BVCES
C - E Breakdown Voltage
VGE = 0V , IC = 1mA
900
-
-
V
VGE(th)
G - E threshold voltage
IC =60mA , VCE = 10V
4.5
-
7.5
V
ICES
Collector cutoff Current
VCE = VCES , VGE = 0V
-
-
1.0
mA
IGES
G - E leakage Current
VGE = VGES , VCE = 0V
-
-
500
nA
VCE(sat)
Collector to Emitter
VGE = 15V, IC =60A
-
2.7
3.5
V
saturation voltage
Cies
Input capacitance
VGE = 0V , f = 1MHz
-
4500
-
pF
Coes
Output capacitance
VCE = 10V
-
800
-
pF
Cres
Reverse transfer capacitance
-
200
-
pF
ton
Turn on time
VCC = 600V , IC = 60A
-
350
800
ns
tr
Rise time
VGE = 15V
-
250
600
ns
toff
Turn off time
RG = 51Ω
-
500
1000
ns
tf
Fall time
Resistive load
-
250
400
ns
VEC
Emitter-Collector Voltage
IE = 15A
-
1.5
2.0
V
trr
Reverse recovery time
IE = 15A, die/dt = -100A/µs
-
0.7
2.0
µs
THERMAL RESISTANCE
Symbol
Characteristics
RθJC
RθJC
Min
Typ
Max
Units
Junction-to-Case : IGBT
-
-
0.625
°C/W
Junction-to-Case : Diode
-
-
4.0
°C/W
IGBT CO-PAK
SGL60N90D
&
&
300
5
VGE=10V,15V,20V
: Tj = 25[ ]
: Tj = 125[ ]
20V
D v ssfo u - Jd
Collecot Current [A]
\B^
250
15V
200
D p mmf d u p s
150
10V
100
&
4
Tj = 125[ ]
3
2
&
Tj = 25[ ]
1
50
0
0
1
2
3
4
5
6
0
0.0
7
0.2
Collector-Emitter Voltage,VCE[V]
0.4
0.6
Collector-Emitter Voltage, VCE[V]
0.8
1.0
OUTPUT CHARACTERISTICS
1 20
20 0
T j = 125[
T j = 12 5 [
&]
F O R W A R D C U R R E N T [A ]
Ic , C o lle c t o r C u r r e n t [ A ]
V C E = 10[V ]
15 0
10 0
50
T j = 25[
0
0
2
4
6
8
&]
1 00
80
60
T j = 25 [
&]
40
&]
20
10
0
0 .0
12
0 .5
V g e , G a t e - E m it t e r V o lt a g e [ V ]
1 .0
1 .5
F O R W A R D V O L T A G E [V ]
2 .0
2 .5
D IO D E C U R R E N T vs F O R W A R D V O L T A G E
T ra n s f e r C h a ra c te r is t ic s
10 4
600
Vce, Collector Em itter Voltage [V]
Capacitance [
10 3
Coes
Cres
10 2
(
Vge=0[V]
f = 1[ ]
Tc = 25 [ ]
10 1
0
5
10
15
Collector - Emitte r Voltage [V]
&
20
20
500
600V
15
400
450V
300V
300
10
200
‹
‹
&
0
5
Rg=51[ ]
RL=10[ ]
Tc=25[ ]
100
0
50
100
150
200
GATE CHARGE Qg [nC]
250
0
300
Vge, Gate Voltage [V]
Ž]
Cies
IGBT CO-PAK
SGL60N90D
800n
3.0m
Vcc = 600[V]
Ic = 34[A]
Vge = 15[V]
Tc = 25[ ]
&
600n
500n
tr
400n
tf
300n
Eo n
2.0m
1.5m
E o ff
1.0m
500.0µ
100n
30
40
50
60
70
G a te R e s i s ta n c e [
+]
80
90
30
100
40
50
60
70
G a te R e s i s ta n ce [
+]
80
90
100
5.5m
700n
Vcc = 600[V]
Ic = 60[A]
Vge = 15[V]
Tc = 25[ ]
&
Vcc = 600[V]
Ic = 60[A]
15[V]
Vge=
Tc =25[ ]
td o ff
tr
500n
400n
tf
300n
td o n
200n
Eo n
&
5.0m
T x ju d i jo h M p t t \K ^
600n
Tx jud i jo h U jn f\t^
&
td o n
200n
0
Vcc = 600[V]
Ic = 34[A]
15[V]
Vge =
Tc = 25[ ]
2.5m
td o ff
T x jud i jo h M p t t \K ^
T x jud i jo h U jn f \ t ^
700n
4.5m
4.0m
3.5m
3.0m
2.5m
E o ff
2.0m
100n
0
1.5m
1.0m
30
40
50
60
70
G a te R e s i s ta n ce [
1µ
80
90
100
30
40
50
60
70
G a te R e s i s ta n c e [
+]
80
90
100
20.0m
Vc c = 600[V ]
Ic = 110[A]
Vg e =
15[V ]
T c = 25[ ]
90 0n
&
Vcc = 600[V]
Ic = 110[A]
Vge = 15[V]
Tc = 25[ ]
tr
80 0n
15.0m
70 0n
td o f f
Switching Loss [J]
T x ju d i jo h U jn f \ t ^
+]
60 0n
50 0n
tf
40 0n
30 0n
td o n
&
Eon
10.0m
Eoff
5.0m
20 0n
10 0n
0
30
40
50
60
70
G a t e Re s i s t a n c e
Rg [
80
+]
90
10 0
0.0
30
40
50
60
70
+]
Gate Resistance [
80
90
100
IGBT CO-PAK
SGL60N90D
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEXTM
CoolFETTM
CROSSVOLTTM
E2CMOSTM
FACTTM
FACT Quiet SeriesTM
FAST
FASTrTM
GTOTM
HiSeCTM
ISOPLANAR TM
MICROWIRETM
POPTM
PowerTrenchTM
QSTM
QuietSeriesTM
SuperSOTTM-3
SuperSOTTM-6
SuperSOTTM-8
TinyLogicTM
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVER ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can be
systems which, (a) are intended for surgical implant
reasonably expected to cause the failure of the life support
into the body, or (b) support or sustain life, or © whose
device or system, or to affect its safety or effectiveness.
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
LIFE SUPPORT POLICY
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without
notice.
Preliminary
First Production
This datasheet contains preliminary data, and supplementary data
will be published at a later data.
Fairchild Semiconductor reserves the right to make changes at any
time without notices in order to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice in
order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been
discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.