TOSHIBA TA8272H

TA8272H
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA8272H
Max Power 43 W BTL × 4 ch Audio Power IC
The TA8272H is 4 ch BTL audio power amplifier for car audio
application.
This IC can generate more high power: POUTMAX = 43 W as it
is included the pure complementary PNP and NPN transistor
output stage.
It is designed low distortion ratio for 4 ch BTL audio power
amplifier, built-in stand-by function, muting function, and
diagnosis circuit which can detect output to VCC/GND short,
output offset voltage and over voltage input mode.
Additionally, the AUX amplifier and various kind of protector
for car audio use is built-in.
Weight: 7.7 g (typ.)
Features
·
High power : POUTMAX (1) = 43 W (typ.)
(VCC = 14.4 V, f = 1 kHz, JEITA max, RL = 4 Ω)
: POUTMAX (2) = 40 W (typ.)
(VCC = 13.7 V, f = 1 kHz, JEITA max, RL = 4 Ω)
: POUT (1) = 28 W (typ.)
(VCC = 14.4 V, f = 1 kHz, THD = 10%, RL = 4 Ω)
: POUT (2) = 24 W (typ.)
(VCC = 13.2 V, f = 1 kHz, THD = 10%, RL = 4 Ω)
·
Built-in diagnosis circuit (pin 25)
·
Low distortion ratio: THD = 0.02% (typ.)
(VCC = 13.2 V, f = 1 kHz, POUT = 5 W, RL = 4 Ω)
·
Low noise: VNO = 0.10 mVrms (typ.)
(VCC = 13.2 V, Rg = 0 Ω, GV = 26dB, BW = 20 Hz~20 kHz)
·
Built-in stand-by switch function (pin 4)
·
Built-in muting function (pin 22)
·
Built-in AUX amplifier from single input to 4 channels output (pin 16)
·
Built-in various protection circuit
·
Operating supply voltage: VCC (opr) = 9~18 V
:
Thermal shut down, over voltage, out to GND, out to VCC, out to out short
1
2002-06-20
TA8272H
20
VCC1
6
VCC2
OUT1 (+)
C1
11
9
IN1
PW-GND1 8
OUT1 (-)
12
5
IN2
PW-GND2 2
OUT2 (-)
C6
16
15
RL
19
21
IN4
PW-GND4 24
OUT4 (-)
RL
23
13
10
4
DIAGNOSIS
OUT
MUTE
25
22
C4
STBY
R1
RIP
C2
PRE-GND
17
PW-GND3 18
OUT4 (+)
14
3
IN3
OUT3 (-)
C1
RL
AUX IN
OUT3 (+)
C1
RL
7
OUT2 (+)
C1
C3
1
TAB
C5
Block Diagram
: PRE-GND
: PW-GND
2
2002-06-20
TA8272H
Caution and Application Method
(Description is made only on the single channel.)
1. Voltage Gain Adjustment
This IC has no NF (negative feedback) terminals. Therefore, the voltage gain can’t adjusted, but it makes
the device a space and total costs saver.
Amp. 2A
Amp. 1
Input
Amp. 2B
Figure 1
Block Diagram
The voltage gain of Amp.1:
GV1 = 0 dB
The voltage gain of Amp.2A, B:
GV2 = 20 dB
The voltage gain of BLT Connection: GV (BTL) = 6 dB
Therefore, the total voltage gain is decided by expression below.
GV = GV1 + GV2 + GV (BTL) = 0 + 20 + 6 = 26 dB
2. Stand-by SW Function (pin 4)
By means of controlling pin 4 (stand-by terminal)
to high and low, the power supply can be set to ON
and OFF. The threshold voltage of pin 4 is set at
about 3VBE (typ.), and the power supply current is
about 2 mA (typ.) at the stand-by state.
Power
VSB (V)
ON
OFF
0~1.5
OFF
ON
3~VCC
ON Power
OFF
4
10 kW
» 2VBE
to BIAS
CUTTING CIRCUIT
Control Voltage of pin 4: VSB
Stand-by
VCC
Figure 2 With pin 4 set to High,
Power is turned ON
Adjustage of Stand-by SW
(1)
(2)
Since VCC can directly be controlled to ON or OFF by the microcomputer, the switching relay can be
omitted.
Since the control current is microscopic, the switching relay of small current capacity is satisfactory
for switching
3
2002-06-20
TA8272H
RELAY
Large current capacity switch
BATTERY
BATTERY
VCC
FROM
MICROCOMPUTER
VCC
– Conventional Method –
Small current capacity switch
BATTERY
DIRECTLY FROM
MICROCOMPUTER
BATTERY
Stand-By VCC
Stand-By VCC
– Stand-by Switch Method –
Figure 3
3. Muting Function (pin 22)
The muting time constant is decided by R1 and C4 and these parts is related the pop noise at power
ON/OFF.
The series resistance; R1 must be set up less than 10 kW.
The muting function have to be controlled by a transistor, FET and m-COM port which has IMUTE > 250
mA ability.
Terminal 22 must not be pulled up and it shall be controlled by OPEN/LOW.
ATT – VMUTE
20
10 kW
5 kW
I (100 mA)
R1
24
C4
IMUTE (OFF)
Mute attenuation ATT
(dB)
0
A
IMUTE
VMUTE
-20
-40
-60
VCC = 13.2 V
Po = 10 W
-80
RL = 4 W
f = 1 kHz
-100
0
BW = 400 Hz~30 kHz
0.4
0.8 1 1.2
1.6
2
Point A voltage: VMUTE
Figure 4
Muting Function
Figure 5
4
2.4
2.8 3
(V)
Mute Attenuation - VMUTE (V)
2002-06-20
TA8272H
4. AUX Input (pin 16)
20dB AMP.
The pin 16 is for input terminal of AUX
amplifier.
The total gain is 0dB by using of AUX amplifier.
Therefore, the m-COM can directly drive the
AUX amplifier.
BEEP sound or voice synthesizer signal can be
input to pin 16 directly.
When AUX function is not used, this pin must be
connected to PRE-GND (pin 13) via a capacitor.
IN
OUT (+)
OUT (-)
AUX AMP
AUX-IN
m-COM
16
-20dB
Figure 6
Diagnosis Output (pin 25)
This diagnosis output terminal of pin 25 has open collector output structure on chip as shown in Figure 7.
In case diagnosis circuit that detect unusual case is operated, NPN transistor (Q1) or (Q2) is turned on.
It is possible to protect all the system of apparatus as well as power IC protection.
In case of being unused this function, use this IC as open-connection on pin 25.
5V
OUTPUT OFFSET
VOLTAGE
DETECTOR
25
5 kW
5.
AUX Input
Q2
OUTPUT SHORT
PROTECTOR
5V
Q1
GND
OVER VOLTAGE
PROTECTOR
t
Q1 is turned on
Q2 is turned on
pin 25: Open collector output (active low)
Figure 7
5.1
Self Diagnosis Output
In Case of Shorting Output to VCC/GND or Over Voltage Power Supplied
NPN transistor (Q1) is turned on.
Threshold of over voltage protection: VCC = 22 V (typ.)
5V
25
LED/LCD
m-COM
ALARM
(Flashing)
(Announcement from a speaker.)
REGULATOR → OFF
(Relay → OFF)
MEMORY (Count and record)
Figure 8
5.2
Application 1
In Case of Shorting Output to Output
NPN transistor (Q1) is turned on and off in response to the input signal voltage.
5
2002-06-20
TA8272H
5.3
In Case of Appearing Output Offset Voltage by Generating a Large Leakage Current on
the Input Capacitor etc.
NPN transistor (Q2) is turned on while the inverted output voltage level become less than the
threshold level of output offset voltage detector.
V
DC voltage of (+) Amp (at leak)
VCC/2 (normal DC voltage)
Leak or short
Vref
DC voltage of (-) Amp (at leak)
t
Offset voltage (at leak)
Elec. Vol.
Vref/2
5V
Vbias
To CPU
L.P.F.
25
A
B
*: It is possible to detect the abnormal output offset which is appeared by the large leakage of the input capacitor at
Vref/2 > Vbias (about 1.4 V)
Figure 9
Application and Detection Mechanism
VCC/2
(-) Amp output
Threshold level
t
GND
Voltage of point (A)
GND
t
Voltage of point (B)
GND
t
Figure 10 Wave Form
6
2002-06-20
TA8272H
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
VCC (surge)
50
V
DC supply voltage
VCC (DC)
25
V
Operation supply voltage
VCC (opr)
18
V
Output current (peak)
IO (peak)
Power dissipation
PD (Note1)
Peak supply voltage (0.2 s)
9
A
125
W
Operation temperature
Topr
-40~85
°C
Storage temperature
Tstg
-55~150
°C
Note1: Package thermal resistance qj-T = 1°C/W (typ.)
(Ta = 25°C, with infinite heat sink)
Electrical Characteristics
(unless otherwise specified VCC = 13.2 V, f = 1 kHz, RL = 4 W, Ta = 25°C)
Characteristics
Symbol
Test
Circuit
ICCQ
¾
POUT MAX (1)
Min
Typ.
Max
Unit
VIN = 0
¾
200
400
mA
¾
VCC = 14.4 V, max Power
¾
43
¾
POUT MAX (2)
¾
VCC = 13.7 V, max Power
¾
40
¾
POUT (1)
¾
VCC = 14.4 V, THD = 10%
¾
28
¾
POUT (2)
¾
THD = 10%
22
24
¾
THD
¾
POUT = 5 W
¾
0.02
0.2
Voltage gain
GV
¾
VOUT = 0.775 Vrms (0dBm)
24
26
28
Voltage gain ratio
DGV
¾
VOUT = 0.775 Vrms (0dBm)
-1.0
0
1.0
VNO (1)
¾
Rg = 0 W, DIN45405
¾
0.12
¾
VNO (2)
¾
Rg = 0 W, BW = 20 Hz~20 kHz
¾
0.10
0.35
Ripple rejection ratio
R.R.
¾
frip = 100 Hz, Rg = 620 W
Vrip = 0.775 Vrms (0dBm)
40
50
¾
dB
Cross talk
C.T.
¾
Rg = 620 W
VOUT = 0.775 Vrms (0dBm)
¾
65
¾
dB
VOFFSET
¾
¾
-150
0
150
mV
Input resistance
RIN
¾
¾
¾
90
¾
kW
Stand-by current
ISB
¾
Stand-by condition
¾
2
10
mA
VSB H
¾
Power: ON
3.0
¾
VCC
VSB L
¾
Power: OFF
0
¾
1.5
VM H
¾
Mute: OFF
VM L
¾
Mute: ON, R1 = 10 kW
0
¾
0.5
V
ATT M
¾
Mute: ON,
VOUT = 7.75 Vrms (20dBm) at
Mute: OFF.
80
90
¾
dB
Quiescent current
Output power
Total harmonic distortion
Output noise voltage
Output offset voltage
Stand-by control voltage
Mute control voltage
Mute attenuation
(Note2)
Test Condition
W
%
dB
mVrms
V
¾
Open
Note2: Muting function have to be controlled by open and low logic, which logic is a transistor, FET and m-COM port
of IMUTE > 250 mA ability.
This means than the mute control terminal : pin 22 must not be pulled-up.
7
2002-06-20
TA8272H
6
VCC2
OUT1 (+)
0.22 mF
C1
11
PW-GND1 8
OUT2 (+)
C1
12
C6
16
C1
15
14
3
17
PW-GND3 18
RL
19
21
IN4
PW-GND4 24
OUT4 (-)
RL
23
13
10
4
DIAGNOSIS
OUT
MUTE
25
22
C4
1 mF
STBY
10 kW
R1
RIP
10 mF
C2
PRE-GND
RL
IN3
OUT4 (+)
C1
5
AUX IN
OUT3 (-)
0.22 mF
7
PW-GND2 2
OUT3 (+)
0.22 mF
RL
IN2
OUT2 (-)
0.22 mF
9
IN1
OUT1 (-)
0.22 mF
C3
0.1 mF
20
VCC1
3900 mF
1
TAB
C5
Test Circuit
: PRE-GND
: PW-GND
8
2002-06-20
TA8272H
T.H.D – POUT
T.H.D – POUT
100
100
VCC = 13.2 V
50
50
RL = 4 W
1 ch drive
10
(%)
10
5
T.H.D
5
3
Total harmonic distortion
Total harmonic distortion
(%)
30
T.H.D
30
f = 10 kHz
0.5
0.3
0.1
f = 1 kHz
RL = 4 W
1 ch drive
13.2 V
3
VCC = 9.0 V
1
0.5
0.3
16.0 V
0.1
1 kHz
0.05
0.05
0.03
0.03
100 Hz
0.01
0.1
0.3 0.5
1
3
Output power
5
10
POUT
30 50
0.01
0.1
100
(W)
0.3 0.5
ICCQ – VCC
3
5
10
POUT
30 50
100
(W)
T.H.D – f
10
400
VCC = 13.2 V
RL = 4 W
POUT = 5 W
T.H.D
(mA)
(%)
RL = ¥
ICCQ
300
1
Total harmonic distortion
Quiescent current
1
Output power
200
100
0.01
10
0
0
10
20
Power supply voltage VCC
0.1
30
(V)
100
1k
Frequency f
9
10 k
100 k
(Hz)
2002-06-20
TA8272H
VNO – Rg
R.R. – f
0
VCC = 13.2 V
RL = 4 W
BW = ~20 k
250
VCC = 13.2 V
Ripple rejection ratio R.R. (dB)
Output noise voltage
VNO
(mVrms)
300
200
150
100
50
0
100
1k
10 k
Singnal source resistance
Rg
Rg = 620 W
-20
100 k
RL = 4 W
-30
-40
-50
-60
-70
0
Vrip = 0.775 Vrms (0dBm)
-10
0
100
(9)
1k
Frequency f
C.T. – f (OUT1)
0
VCC = 13.2 V
C.T. (dB)
Rg = 620 W
-20
VOUT = 0.775 Vrms (0dBm)
-10
RL = 4 W
-30
Cross talk
C.T. (dB)
Cross talk
VCC = 13.2 V
VOUT = 0.775 Vrms (0dBm)
-10
-40
OUT1 ® OUT3, 4
OUT1 ® OUT4
-50
Rg = 620 W
-20
RL = 4 W
-30
-40
OUT2 ® OUT3, 4
-50
-60
OUT2 ® OUT1
-60
0
100
1k
Frequency f
10 k
-70
100 k
0
100
(Hz)
1k
Frequency f
C.T. – f (OUT3)
100 k
10 k
100 k
0
VCC = 13.2 V
VCC = 13.2 V
VOUT = 0.775 Vrms (0dBm)
-10
C.T. (dB)
Rg = 620 W
-20
RL = 4 W
-30
-40
OUT3 ® OUT1, 2
-50
OUT3 ® OUT1, 2
OUT3 ® OUT4
OUT3 ® OUT4
-60
0
100
VOUT = 0.775 Vrms (0dBm)
-10
Cross talk
C.T. (dB)
10 k
(Hz)
C.T. – f (OUT4)
0
Cross talk
OUT2 ® OUT3, 4
OUT1 ® OUT2, 3
OUT1 ® OUT2
-70
100 k
C.T. – f (OUT2)
0
-70
10 k
(Hz)
Rg = 620 W
-20
RL = 4 W
-30
-40
OUT4 ® OUT1, 2
-50
OUT4 ® OUT3
-60
1k
Frequency f
10 k
-70
100 k
(Hz)
0
100
1k
Frequency f
10
(Hz)
2002-06-20
TA8272H
GV – f
PD – POUT
40
70
(W)
20
15
10
VCC = 13.2 V
50
40
16 V
13.2 V
30
20
f = 1 kHz
9V
RL = 4 W
5
PD
GV
25
60
Power dissipation
(dB)
30
Voltage gain
35
10
RL = 4 W
VOUT = 0.775 Vrms (0dBm)
0
0
0
100
1k
Frequency f
10 k
100 k
(Hz)
0
5
10
Output power
15
20
25
POUT/ch (C)
Allowable power dissipation PD MAX
(W)
PD MAX – Ta
120
① INFINITE HEAT SINK
Rq HS = 1°°C/W
100
② HEAT SINK (RqHS = 3.5°°C/W)
Rq HS + RqHC = 4.5°°C/W
③ NO HEAT SINK
80
RqJA = 39°°C/W
①
60
40
20
②
③
0
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
11
2002-06-20
TA8272H
Package Dimensions
Weight: 7.7 g (typ.)
12
2002-06-20
TA8272H
RESTRICTIONS ON PRODUCT USE
000707EBF
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· This product generates heat during normal operation. However, substandard performance or malfunction may
cause the product and its peripherals to reach abnormally high temperatures.
The product is often the final stage (the external output stage) of a circuit. Substandard performance or
malfunction of the destination device to which the circuit supplies output may cause damage to the circuit or to the
product.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
13
2002-06-20