MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. http://onsemi.com (3) (2) (1) Features • • • • • • • Q1 hFE, 100−300 Low VCE(sat), ≤ 0.4 V Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7−inch/3,000 Unit Tape and Reel Pb−Free Package is Available Q2 (4) (5) (6) 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −200 mAdc ESD HBM>16000, MM>2000 V Collector Current − Continuous Electrostatic Discharge SOT−363/SC−88 CASE 419B STYLE 1 MARKING DIAGRAM 6 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. A2d 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 150 mW Thermal Resistance, Junction−to−Ambient RJA 833 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Total Package Dissipation (Note 1) TA = 25°C A2 = Device Code d = Date Code ORDERING INFORMATION 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. Device Package Shipping† MBT3906DW1T1 SOT−363 3000 Units/Reel MBT3906DW1T1G SOT−363 (Pb−Free) 3000 Units/Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 January, 2005 − Rev. 1 1 Publication Order Number: MBT3906DW1T1/D MBT3906DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 2) V(BR)CEO −40 − Vdc Collector −Base Breakdown Voltage V(BR)CBO −40 − Vdc Emitter −Base Breakdown Voltage V(BR)EBO −5.0 − Vdc IBL − −50 nAdc ICEX − −50 nAdc 60 80 100 60 30 − − 300 − − − − −0.25 −0.4 −0.65 − −0.85 −0.95 fT 250 − MHz Output Capacitance Cobo − 4.5 pF Input Capacitance Cibo − 10.0 pF OFF CHARACTERISTICS Base Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 2) DC Current Gain (IC = −0.1 mAdc, VCE = −1.0 Vdc) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −50 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product 2. Pulse Test: Pulse Width ≤ 300 s; Duty Cycle ≤ 2.0%. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Max Unit Input Impedance (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hie 2.0 12 k Voltage Feedback Ratio (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hre 0.1 10 X 10− 4 Small −Signal Current Gain (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hfe 100 400 − Output Admittance (VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) hoe 3.0 60 mhos Noise Figure (VCE = −5.0 Vdc, IC = −100 Adc, RS = 1.0 k , f = 1.0 kHz) NF − 4.0 dB Characteristic SWITCHING CHARACTERISTICS Delay Time (VCC = −3.0 Vdc, VBE = 0.5 Vdc) td − 35 Rise Time (IC = −10 mAdc, IB1 = −1.0 mAdc) tr − 35 Storage Time (VCC = −3.0 Vdc, IC = −10 mAdc) ts − 225 Fall Time (IB1 = IB2 = −1.0 mAdc) tf − 75 http://onsemi.com 2 ns ns MBT3906DW1T1 3V 3V < 1 ns +9.1 V 275 275 < 1 ns 10 k +0.5 V 10 k 0 Cs < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% Cs < 4 pF* 1N916 10 < t1 < 500 s 10.9 V t1 DUTY CYCLE = 2% * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS 10 5000 7.0 3000 2000 Cobo 5.0 Q, CHARGE (pC) CAPACITANCE (pF) TJ = 25°C TJ = 125°C Cibo 3.0 2.0 VCC = 40 V IC/IB = 10 1000 700 500 300 200 QT QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS) 100 70 50 20 30 40 1.0 2.0 3.0 Figure 3. Capacitance 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 4. Charge Data 500 500 IC/IB = 10 300 200 VCC = 40 V IB1 = IB2 300 200 100 70 50 tr @ VCC = 3.0 V 15 V 30 20 t f , FALL TIME (ns) TIME (ns) IC/IB = 20 100 70 50 30 20 IC/IB = 10 40 V 10 7 5 10 2.0 V 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn −On Time Figure 6. Fall Time http://onsemi.com 3 200 MBT3906DW1T1 TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = − 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 IC = 1.0 mA 4.0 f = 1.0 kHz SOURCE RESISTANCE = 200 IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 A 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 A 1.0 0 0.1 0.2 0.4 IC = 1.0 mA 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.0 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 IC = 0.5 mA 8 6 4 IC = 50 A 2 IC = 100 A 0 100 0.1 0.2 40 0.4 1.0 2.0 4.0 10 20 Rg, SOURCE RESISTANCE (k OHMS) Figure 7. 100 Figure 8. h PARAMETERS (VCE = − 10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE ( mhos) h fe , DC CURRENT GAIN 300 200 100 70 50 70 50 30 20 10 7 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5 5.0 7.0 10 0.1 0.2 h ie , INPUT IMPEDANCE (k OHMS) 20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 10. Output Admittance hre , VOLTAGE FEEDBACK RATIO (x 10 −4) Figure 9. Current Gain 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 11. Input Impedance 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 Figure 12. Voltage Feedback Ratio http://onsemi.com 4 MBT3906DW1T1 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 −55 °C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 13. DC Current Gain 1.0 TJ = 25°C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 14. Collector Saturation Region TJ = 25°C V, VOLTAGE (VOLTS) 0.8 V , TEMPERATURE COEFFICIENTS (mV/ °C) 1.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 1.0 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 1.0 0.5 0 +25°C TO +125°C −55 °C TO +25°C −0.5 +25°C TO +125°C −1.0 −55 °C TO +25°C VB FOR VBE(sat) −1.5 −2.0 200 VC FOR VCE(sat) 0 Figure 15. “ON” Voltages 20 40 60 80 100 120 140 IC, COLLECTOR CURRENT (mA) 160 Figure 16. Temperature Coefficients http://onsemi.com 5 180 200 MBT3906DW1T1 PACKAGE DIMENSIONS SOT−363/SC−88 CASE 419B−02 ISSUE U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. A G 6 5 4 1 2 3 DIM A B C D G H J K N S −B− S D 6 PL 0.2 (0.008) M B M MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 N J C H INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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