MRA1014-35 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .320 SQ 2L FLG The ASI MRA1014-35 is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 1.0 GHz to 1.4 GHz. C B FEATURES: • Diffused Ballast Resistors. • Internal Matching Network • Omnigold™ Metalization System E MAXIMUM RATINGS IC 5.0 A (CONT) VCES 50 V VEBO 3.5 V TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 2.5 °C/W CHARACTERISTICS NONE TC = 25 °C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 200 mA 50 V BVEBO IE = 2.5 mA 3.5 V ICBO VCB = 28 V hFE VCE = 5.0 V Cob VCB = 28 V GPB ηc VCE = 28 V IC = 1.0 A 10 f = 1.0 MHz Pout = 35 W f = 1.0 GHz & 1.4 GHz 5.0 mA 100 --- 24 pF 7.0 dB 50 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1