BUK71/7905-40AIE TrenchPLUS standard level FET Rev. 04 — 6 February 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS current sensing and diodes for ESD protection. 1.2 Features ■ ESD protection ■ Integrated current sensor ■ Q101 compliant ■ Standard level compatible. 1.3 Applications ■ Variable Valve Timing for engines ■ Electrical Power Assisted Steering. 1.4 Quick reference data ■ VDS ≤ 40 V ■ ID ≤ 155 A ■ RDSon = 4.5 mΩ (typ) ■ ID/Isense = 500 (typ). 2. Pinning information Table 1: Pinning - SOT426 and SOT263B, simplified outline and symbol Pin Description 1 gate (g) 2 Isense (Is) 3 drain (d) 4 Kelvin source 5 source (s) mb mounting base; connected to drain (d) Simplified outline Symbol d mb mb g 1 2 3 4 5 Front view SOT426 (D2-PAK) MBK127 MBL368 1 5 MBL263 SOT263B (TO-220) Isense s Kelvin source BUK71/7905-40AIE Philips Semiconductors TrenchPLUS standard level FET 3. Ordering information Table 2: Ordering information Type number Package Name Description Version BUK7105-40AIE D2-PAK D2-PAK); Plastic single-ended surface mounted package (Philips version of 5 leads (one lead cropped) BUK7905-40AIE TO-220 Plastic single ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 SOT426 SOT263B 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage (DC) VDGR drain-gate voltage (DC) VGS gate-source voltage (DC) ID drain current (DC) Conditions RGS = 20 kΩ Min Max Unit - 40 V - 40 V - ±20 V Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 [1] - 155 A [2] - 75 A Tmb = 100 °C; VGS = 10 V; Figure 2 [2] - 75 A IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 620 A Ptot total power dissipation Tmb = 25 °C; Figure 1 - 272 W IGS(CL) gate-source clamping current continuous - 10 mA tp = 5 ms; δ = 0.01 - 50 mA Tstg storage temperature −55 +175 °C Tj junction temperature −55 +175 °C Source-drain diode reverse drain current (DC) IDR IDRM peak reverse drain current Tmb = 25 °C [1] - 155 A [2] - 75 A Tmb = 25 °C; pulsed; tp ≤ 10 µs - 620 A unclamped inductive load; ID = 75 A; VDS ≤ 40 V; VGS = 10 V; RGS = 50 Ω; starting Tj = 25 °C - 1.46 J Human Body Model; C = 100 pF; R = 1.5 kΩ - 6 kV Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy Electrostatic discharge Vesd [1] [2] electrostatic discharge voltage; all pins Current is limited by power dissipation chip rating. Continuous current is limited by package. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12341 Product data Rev. 04 — 6 February 2004 2 of 16 BUK71/7905-40AIE Philips Semiconductors TrenchPLUS standard level FET 03na19 120 03ng16 160 ID (A) Pder (%) 120 80 80 40 Capped at 75A due to package 40 0 0 0 50 100 0 150 200 Tmb (°C) 50 100 150 Tmb (ºC) 200 VGS ≥ 10 V P tot P der = ----------------------- × 100% P ° tot ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. 103 03ng17 ID (A) Limit RDSon = VDS/ID tp = 10 µs 100 µs 102 Capped at 75 A due to package 1 ms DC 10 ms 10 100 ms 1 1 10 VDS (V) 102 Tmb = 25 °C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12341 Product data Rev. 04 — 6 February 2004 3 of 16 BUK71/7905-40AIE Philips Semiconductors TrenchPLUS standard level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient vertical in still air - 60 - K/W minimum footprint; mounted on a printed-circuit board - 50 - K/W Figure 4 - - 0.55 K/W SOT263B SOT426 Rth(j-mb) thermal resistance from junction to mounting base 5.1 Transient thermal impedance 03ni64 1 Z th(j-mb) (K/W) 10-1 δ = 0.5 0.2 0.1 0.05 0.02 10-2 δ= P tp T single shot t tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12341 Product data Rev. 04 — 6 February 2004 4 of 16 BUK71/7905-40AIE Philips Semiconductors TrenchPLUS standard level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V Tj = 25 °C 40 - - V Tj = −55 °C 36 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 drain-source leakage current Tj = 25 °C 2 3 4 V Tj = 175 °C 1 - - V Tj = −55 °C - - 4.4 V Tj = 25 °C - 0.1 10 µA Tj = 175 °C - - 250 µA 20 22 - V Tj = 25 °C - 22 1000 nA Tj = 175 °C - - 10 µA Tj = 25 °C - 4.5 5 mΩ Tj = 175 °C - - 9.5 mΩ 0.98 1.08 1.18 Ω Ω VDS = 40 V; VGS = 0 V V(BR)GSS gate-source breakdown voltage IG = ±1 mA; −55 °C < Tj < 175 °C IGSS gate-source leakage current VGS = ±10 V; VDS = 0 V RDSon RD(Is)on drain-source on-state resistance drain-Isense on-state resistance VGS = 10 V; ID = 50 A; Figure 7 and 8 VGS = 10 V; ID = 100 mA; Figure 16 Tj = 25 °C Tj = 175 °C ID/Isense ratio of drain current to sense VGS > 10 V; current −55 °C < Tj < 175 °C 1.86 2.05 2.24 450 500 550 - 120 127 nC - 19 22 nC - 50 60 nC - 4300 5000 pF - 1400 1670 pF - 820 1100 pF - 35 - nS - 115 - nS Dynamic characteristics Qg(tot) total gate charge Qgs gate-source charge Qgd gate-drain (Miller) charge Ciss input capacitance VGS = 10 V; VDS = 32 V; ID = 25 A; Figure 14 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time td(off) turn-off delay time - 155 - nS tf fall time - 110 - nS VDS = 30 V; RL = 1.2 Ω; VGS = 10 V; RG = 10 Ω © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12341 Product data Rev. 04 — 6 February 2004 5 of 16 BUK71/7905-40AIE Philips Semiconductors TrenchPLUS standard level FET Table 5: Characteristics…continued Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Ld internal drain inductance measured from upper edge of drain mounting base to center of die - 2.5 - nH Ls internal source inductance measured from source lead to source bond pad - 7.5 - nH Source-drain diode VSD source-drain (diode forward) voltage IS = 40 A; VGS = 0 V; Figure 17 - 0.85 1.2 V trr reverse recovery time - 96 - ns Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs VGS = −10 V; VDS = 30 V - 224 - nC © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12341 Product data Rev. 04 — 6 February 2004 6 of 16 BUK71/7905-40AIE Philips Semiconductors TrenchPLUS standard level FET 03ni86 400 ID (A) Label is VGS (V) 10 8 RDSon (mΩ) 7.5 20 300 03ni88 12 7 8 6.5 200 6 5.5 100 4 5 4.5 4 0 0 0 2 4 6 8 10 VDS (V) Tj = 25 °C; tp = 300 µs 4 12 16 VGS (V) 20 Tj = 25 °C; ID = 50 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 03ni30 2 03ni87 20 VGS = 5.5 V 6 V RDSon (mΩ) 8 a 6.5 V 7V 1.6 15 1.2 10 0.8 8V 10 V 5 0.4 20 V 0 0 0 100 200 300 I (A) 400 D Tj = 25 °C; tp = 300 µs -60 60 120 Tj (°C) 180 R DSon a = ---------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12341 Product data 0 Rev. 04 — 6 February 2004 7 of 16 BUK71/7905-40AIE Philips Semiconductors TrenchPLUS standard level FET 03aa32 5 03aa35 10-1 ID (A) VGS(th) (V) 4 max 10-2 3 typ 10-3 2 min 10-4 1 10-5 0 10-6 -60 0 60 120 180 Tj (°C) min 0 2 typ max 4 6 VGS (V) Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. 03ni89 90 Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03ne67 8 C (nF) gfs (S) 6 60 Ciss 4 30 2 Coss Crss 0 0 0 25 50 75 100 ID (A) Tj = 25 °C; VDS = 25 V 10-1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12341 Product data 1 Rev. 04 — 6 February 2004 8 of 16 BUK71/7905-40AIE Philips Semiconductors TrenchPLUS standard level FET 03ni26 10 VGS 03ni90 100 ID (A) (V) 8 VDS = 14 V 75 32 V 6 50 4 175 °C 25 2 Tj = 25 °C 0 0 0 2 4 VGS (V) 0 6 20 40 60 80 100 120 QG (nC) Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03nk33 4 03nn69 600 Fig 14. Gate-source voltage as a function of gate charge; typical values. RD(Is)on (Ω) ID/Isense 3 550 2 500 1 450 0 400 4 8 12 16 V 20 GS (V) ID = 50 A 4 8 VGS (V) 10 Isense = 25 mA Fig 15. Drain-sense current ratio as a function of gate-source voltage; typical values. Fig 16. Drain-Isense on-state resistance as a function of gate-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12341 Product data 6 Rev. 04 — 6 February 2004 9 of 16 BUK71/7905-40AIE Philips Semiconductors TrenchPLUS standard level FET 03ni91 100 ID (A) 80 60 40 175 °C 20 Tj = 25 °C 0 0.0 0.4 0.8 1.2 VSD (V) 1.6 VGS = 0 V Fig 17. Drain current as a function of source-drain diode voltage; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12341 Product data Rev. 04 — 6 February 2004 10 of 16 BUK71/7905-40AIE Philips Semiconductors TrenchPLUS standard level FET 7. Package outline Plastic single-ended surface mounted package (Philips version of D2-PAK); 5 leads (one lead cropped) SOT426 A A1 E D1 mounting base D HD 3 1 2 4 e e Lp 5 b e c e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 1.70 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-12-14 99-06-25 SOT426 Fig 18. SOT426 (D2-PAK). © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12341 Product data Rev. 04 — 6 February 2004 11 of 16 BUK71/7905-40AIE Philips Semiconductors TrenchPLUS standard level FET Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 SOT263B E p1 A ∅p A1 q D1 mounting base D L1 Q L2 m L 1 5 e b c w M 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D D1 E e L mm 4.5 4.1 1.39 1.27 0.85 0.70 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 1.7 15.0 13.5 L1 (1) 2.4 1.6 (2) L2 0.5 m ∅p p1 q Q w 0.8 0.6 3.8 3.6 4.3 4.1 3.0 2.7 2.6 2.2 0.4 Notes 1. Terminal dimensions are uncontrolled in this zone. 2. Positional accuracy of the terminals is controlled in this zone. OUTLINE VERSION REFERENCES IEC SOT263B JEDEC EIAJ 5-lead TO-220 EUROPEAN PROJECTION ISSUE DATE 01-01-11 Fig 19. SOT263B (TO-220). © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12341 Product data Rev. 04 — 6 February 2004 12 of 16 BUK71/7905-40AIE Philips Semiconductors TrenchPLUS standard level FET 8. Soldering 10.85 10.60 10.50 1.50 7.50 7.40 1.70 2.25 2.15 8.15 8.275 8.35 1.50 4.60 0.30 4.85 5.40 7.95 8.075 3.00 0.20 solder lands 1.70 (2×) solder resist 3.40 0.90 1.00 8.15 MSD058 occupied area solder paste Dimensions in mm. Fig 20. Reflow soldering footprint for SOT426. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12341 Product data Rev. 04 — 6 February 2004 13 of 16 BUK71/7905-40AIE Philips Semiconductors TrenchPLUS standard level FET 9. Revision history Table 6: Revision history Rev Date 04 20040206 CPCN Description - Product data (9397 750 12341) Modifications: • Qg(tot); Qgs; Qgd values changed in Table 5 • Ciss; Coss; Crss values changed in Table 5 • Section 3 “Ordering information” added 03 20030523 - Product data (9397 750 11366) 02 20021001 - Product data (9397 750 10284) 01 20020725 - Product data (9397 750 09871) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12341 Product data Rev. 04 — 6 February 2004 14 of 16 BUK71/7905-40AIE Philips Semiconductors TrenchPLUS standard level FET 10. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 12. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12341 Rev. 04 — 6 February 2004 15 of 16 Philips Semiconductors BUK71/7905-40AIE TrenchPLUS standard level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 © Koninklijke Philips Electronics N.V. 2004. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 6 February 2004 Document order number: 9397 750 12341