2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAGX75L60A Features • • • • • • • 600 Volts 75 Amps 1.8 Volts vce(sat) Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAGX75L60B low VCE(sat) IGBT, low conduction losses N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Maximum Ratings @ 25°°C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) @ TJ ≥ 25°C Collector-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25°C Tj= 90°C Peak Collector Current, pulse width limited by Tjmax, Safe Operating Area (RBSOA) @ VGE= 15V, L= 30µH (clamped inductive SYMBOL MAX. UNIT BVCES 600 Volts BVCGR VGES VGEM IC25 IC90 600 +/-20 +/-30 75 60 Volts Volts Volts Amps ICM Imax 200 100 Amps Amps PD Tj Tstg θJC 300 -55 to +150 -55 to +150 0.25 Watts °C °C °C/W load), R G= 2.7Ω, Tj= 125°C, VCE= 0.8 x V CES Power Dissipation Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case Mechanical Outline COLLECTOR GATE EMITTER Datasheet# MSC0297A MSAGX75L60A Electrical Parameters @ 25°°C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) Gate Threshold Voltage Gate-to-Emitter Leakage Current SYMBOL CONDITIONS BVCES VGS = 0 V, I C = 250 µA VGE(th) VCE = VGE, IC = 250 µA VGE = ± 20V DC, VCE = 0 IGES Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) Collector-to-Emitter Saturation Voltage (1) Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance INDUCTIVE LOAD, Tj= 25°°C Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Off Energy INDUCTIVE LOAD, Tj= 125°°C Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector (Miller) Charge ICES VCE(sat) gfs VCE =0.8•BVCES VGE = 0 V VGE= 15V, I C= 60A I C= 60A VCE ≥ 10 V; I C = 60 A TYP. MAX 600 30 UNIT V 2.5 T J = 25°C T J = 125°C TJ = 25°C T J = 125°C T J = 25°C T J = 125°C 5.0 ±100 ±200 200 1000 1.8 1.8 40 V nA µA V S Cies Coes Cres VGE = 0 V, V CE = 25 V, f = 1 MHz 4000 340 100 pF td(on) tri td(off) tfi Eoff VGE = 15 V, V CE = 480 V, IC = 60 A, R G = 2.7 Ω, L= 100 µH note 2, 3 50 210 600 500 16 ns ns ns ns mJ td(on) tri Eon td(off) tfi Eoff Qg Qge Qgc VGE = 15 V, V CE = 480 V, IC = 60 A, R G = 2.7 Ω, L= 100 µH note 2, 3 50 240 3 1000 1000 26 200 35 80 VGE = 15 V, V CE = 300V, I C = 50A Notes (1) (2) (3) (4) MIN Pulse test, t ≤ 300 µ s, duty cycle δ ≤ 2% switching times and losses may increase for larger V CE and/or R G values or higher junction temperatures. switching losses include “tail” losses Microsemi Corp. does not manufacture the igbt die; contact company for details. 800 700 250 50 100 ns ns mJ ns ns mJ nC