ICs for Mobile Communication
AN6096FHN
Transmission and reception IC for cellular telephone
■ Overview
Unit: mm
The AN6096FHN is a transmission and reception IC for a cellular telephone. It is encapsulated in
the QFN package which is very thin and very small
outline by using our exclusive process method.
It integrates QPSK (Quadrature phase shift keying) modulator for transmission and an IF circuit
for reception in a single chip. It contributes to realization of thinner and lighter equipment by adopting a very small package and designing a low power
consumption circuit.
A
0.
C
312
24
8
0.2±0.1
R0.3
0.10 S
Seating plane
• Integrating an orthogonal modulation circuit for
transmission and an IF circuit for reception on a
single chip
• Low power consumption by using an indirect
modulation system in transmission block
• Built-in APC circuit for transmission output adjustment
• High input sensitivity by optimizing circuit in reception circuit
• Built-in RSSI circuit of wide dynamic range in reception block
20
12
8
B
24
7
0.80max.
7
■ Features
,
,,
19
2.0±0.2
20
1
,
,
13
3.0±0.1
13
4.0±0.1
4.2±0.2
19
3.0±0.2
4.0±0.1
(1.10)
(1.10)
5
5.2±0.2
5.0±0.1
1
0.50
0.2±0.1
0.10
M
S A B
S
QFN024-P-0405
Q-IN
Q-IN
I-IN
20
IO
LMDEC1
13
LMDEC2
14
LMIN
15
GNDOUT
16
TXOUT
17
19
■ Block Diagram
18
VCCMOD
• Cellular telephone
VCCOUT
■ Applications
IO
12
21
IO
22
11
10
MXOUT
VCCMIX
RXMXIN
RSSI
9
24
8
RXLOIN
7
RSOUT
VCCLIM
6
LMOUT
5
GNDRX
4
TXLO2R
3
TXLO2
GNDMOD
2
IO
1
APC/BS
23
TXLO1
I-IN
1
AN6096FHN
ICs for Mobile Communication
■ Pin Descriptions
Pin No.
Symbol
1
TXLO1
2
GNDMOD
3
TXLO2
4
Description
Pin No.
Symbol
Description
TX local 1-in
13
LMDEC1
Lim. decouple 1
GND TX-mod.
14
LMDEC2
Lim. decouple 2
TX local 2
15
LIMIN
TXLO2R
TX local 2-ref.
16
GNDOUT
5
GNDRX
GND-RX
17
TXOUT
6
LMOUT
Lim. out
18
VCCOUT
VCC TX-out
7
VCCLIM
VCC lim.
19
VCCMOD
VCC TX-mod.
8
RSOUT
RSSI out
20
Q-IN
Q input
9
RXLOIN
RX local-in
21
Q-IN
Q input
10
RXMXIN
RX mix.-in
22
I-IN
I input
11
VCCMIX
VCC mix.
23
I-IN
I input
12
MXOUT
Mix. out
24
APC / BS
Lim. in
GND TX-out
TX-output
APC / BS
■ Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
VCC
4.2
V
ICC
60
mA
PD
125
mW
Topr
−30 to +80
°C
Tstg
−55 to +125
°C
Supply voltage
Supply current
Power dissipation
*2
Operating ambient temperature
Storage temperature
*1
*1
Note) *1: Except for the operating ambient temperature and storage temperature, all ratings are for Ta = 25°C.
*2: The power dissipation shown is for the independent IC without a heat sink at Ta = 80°C. Refer to "■ Application Notes".
■ Recommended Operating Range
Parameter
Supply voltage
2
Symbol
Range
Unit
VCC
2.7 to 4.0
V
ICs for Mobile Communication
AN6096FHN
■ Electrical Characteristics at Ta = 25°C
Parameter
Consumption current
(Transmission)
Symbol
*1
Sleep current *1
Conditions
Min
Typ
Max
Unit
ICCTX
Lo1 = 178 MHz, −25 dBm
Lo2 = 1 619 MHz, −20 dBm
VAPC = 2.3 V
25
33
mA
ISLTX
No signal, VAPC/BS = 0 V
0
10
µA
*1
PO1
Lo1 = 178 MHz, −25 dBm
Lo2 = 1 607 MHz, −20 dBm
VAPC = 2.3 V
−16
−13
dBm
Output level 2 *1
PO2
Lo1 = 178 MHz, −25 dBm
Lo2 = 1 631 MHz, −20 dBm
VAPC = 2.3 V
−16
−13
dBm
Minimum output level *1
Pmin
Lo1 = 178 MHz, −25 dBm
Lo2 = 1 619 MHz, −20 dBm
VAPC = 1.0 V
−50
−43
dBm
No signal
3.2
4.5
mA
GMX
VM1 = 60 dBµ, SW1 = b
Filter loss: except for −5.5 dB
21
23.5
26
dB
Mix. maximum output amplitude *2
VMX
VM1 = 105 dBµ, SW1 = b
Filter loss: except for −5.5 dB
101
107
dBµ
Lim. voltage gain *2
GLM
VL1 = 15 dBµ
80
85
90
dB
VLM
VL1 = 80 dBµ, 400 kHz component 0.90
1.25
1.60
V[p-p]
VS1
VL1 = 0 dBµ
0
0.23
0.6
V
VS2
VL1 = 115 dBµ
2.31
2.6
2.91
V
DS
VS (VIS) = VS1 + 0.12 V
DS = VS (VIS + 75 dBµ) − V(VIS)
1.39
1.8
2.19
V
Output level 1
Consumption current (Reception) *2 ICCRX
Mix. conversion gain
*2
Lim. maximum output amplitude
RSSI output voltage 1
*2
RSSI output voltage 2
*2
RSSI reference output inclination
*2
*3
RSSI output
inclination variation 1 *3
∆DS1
∆DS1 = 5{VS (VIS + 15 dBµ)
− VS (VIS)}/ DS
0.75
1
1.25
RSSI output
inclination variation 2 *3
∆DS2
∆DS2 = 5{VS (VIS + 30 dBµ)
− VS (VIS + 15 dBµ)}/ DS
0.75
1
1.25
RSSI output
inclination variation 3 *3
∆DS3
∆DS3 = 5{VS (VIS + 45 dBµ)
− VS (VIS + 30 dBµ)}/ DS
0.75
1
1.25
RSSI output
inclination variation 4 *3
∆DS4
∆DS4 = 5{VS (VIS + 60 dBµ)
− VS (VIS + 45 dBµ)}/ DS
0.75
1
1.25
RSSI output
inclination variation 5 *3
∆DS5
∆DS5 = 5{VS (VIS + 75 dBµ)
− VS (VIS + 60 dBµ)}/ DS
0.75
1
1.25
Note) *1: VCC = 3.0 V, IQ signal amplitude: 0.35 V[p-p] (single phase), DC bias: 1.6 V, π/4 QPSK modulation wave
Output frequency of PO1: 1 429.002 5 MHz, Output frequency of PO2: 1 453.002 5 MHz,
Output frequency of Pmin: 1 441.002 5 MHz
Lo input level is a setting value of signal source (output impedance 50 Ω).
*2: VCC2 = 3.0 V, SW1 = a, VLO3 = 90 dBµ: f = 129.6 MHz, VM1: f = 130 MHz, VL1: f = 400 kHz (input level of pin 15 excluding
the attenuation by matching circuit and filter.) VMX and VLM are measured in high impedance unless otherwise specified.
Lo input level is a setting value of signal source (output impedance 50 Ω).
*3: VIS is the input level of which the RSSI output voltage becomes VS1 + 0.12 V.
3
AN6096FHN
ICs for Mobile Communication
■ Electrical Characteristics at Ta = 25°C (continued)
• Design reference data
Note) The characteristics listed below are theoretical values based on the IC design and are not guaranteed.
VCC1 = 3.0 V unless otherwise specified.
Lo input level is a setting value of signal source (output impedance 50 Ω).
Parameter
Conditions
Min
Typ
Max
Unit
Carrier leak suppression amount
(fLO2 − fLO1)
CL
Lo1 = 178 MHz, −25 dBm
Lo2 = 1 619 MHz, −20 dBm
VAPC = 2.3 V
IO: DC offset adjustment
−35
dBc
Image leak suppression amount
IL
Lo1 = 178 MHz, −25 dBm
Lo2 = 1 619 MHz, −20 dBm
VAPC = 2.3 V, IO: level adjustment
−35
dBc
Near spurious suppression
amount
DU
Lo1 = 178 MHz, −25 dBm
Lo2 = 1 619 MHz, −20 dBm
VAPC = 2.3 V
−70
−65
dBc
Base band distortion suppression
amount
BD
Lo1 = 178 MHz, −25 dBm
Lo2 = 1 619 MHz, −20 dBm
VAPC = 2.3 V
−40
dBc
Adjacent channel leakage power
suppression amount
(30 kHz detuning)
BL1
Lo1 = 178 MHz, −25 dBm
Lo2 = 1 619 MHz, −20 dBm
VAPC = 2.3 V
−45
−38
dBc
Adjacent channel leakage power
suppression amount
(50 kHz detuning)
BL2
Lo1 = 178 MHz, −25 dBm
Lo2 = 1 619 MHz, −20 dBm
VAPC = 2.3 V
−70
−60
dBc
Adjacent channel leakage power
suppression amount
(100 kHz detuning)
BL3
Lo1 = 178 MHz, −25 dBm
Lo2 = 1 619 MHz, −20 dBm
VAPC = 2.3 V
−65
dBc
APC variable width
LAPC
Lo1 = 178 MHz, −25 dBm
Lo2 = 1 619 MHz, −20 dBm
VAPC = 1.0 V to 2.3 V
30
37
dB
APC output level control sensitivity
SAPC
Lo1 = 178 MHz, −25 dBm
Lo2 = 1 619 MHz, −20 dBm
VAPC = 1.0 V / 1.6 V
46
dB/V
−1.5
+1.5
dB
2.0
%rms
In-band output level deviation
Modulation precision
4
Symbol
∆P
EVM
Lo1 = 178 MHz, −25 dBm
Lo2 = 1 607 MHz to 1 631 MHz,
−20 dBm
VAPC = 2.3 V
Lo1 = 178 MHz, −25 dBm
Lo2 = 1 619 MHz, −20 dBm
VAPC = 2.3 V
ICs for Mobile Communication
AN6096FHN
■ Application Notes
• PD Ta curves of QFN024-P-0405
PD T a
0.700
0.660
Power dissipation PD (W)
0.600
Mounted on the standard
printed circuit board
(Glass epoxy:50 × 50 × t0.8 mm3)
Rth(j−a) = 151.5°C/W
0.500
0.500
0.300
0.279
Independent IC
without a heat sink
Rth(j−a) = 357.4°C/W
0.200
0.100
0
0
25
50
75
100
125
Ambient temperature Ta (°C)
• Main characteristics
Note) Test conditions are the same as "■ Electrical Characteristics" unless otherwise specified.
The characteristics listed below are theoretical values based on the IC design and are not guaranteed.
Output level PO (dBm)
−20
−30
−40
−30°C
80°C
−50
−30
ACP 30 kHz
−60
−40
80°C
25°C
−70
−50
−30°C
−80
−30°C, 25°C ACP 50 kHz
80°C
Circuit off
−30°C
25°C
0
1
2
APC control voltage (V)
−60
−70
−80
DU
−90
3
120
80°C
110
100
Mix. output level (dBµV)
VCC = 3.0 V, Ta = −30°C, 25°C, 80°C
Lo1: 178 MHz −25 dBm
Lo2: 1619 MHz −20 dBm
I, Q: 0.35 V[p-p]
PO
(Single phase)
1.6 VDC , π / 4
Using PN9-step
continuous wave
−10
Mix. characteristics
Adjacent channel leakage power suppression amount
ACP 30 kHz, ACP 50 kHz (dBc)
Proximity spurious suppression amount DU (dBc)
APC control voltage characteristics
0
25°C
90
−30°C
80
70
60
50
40
VCC = 3.0 V
Ta = −30°C, 25°C, 80°C
Mix. in: 130 kHz
Mix. out: 400 kHz
Lo3 in: 129.6 MHz, 90 dBµV
30
20
10
0
0
20
40
60
80
100
120
Mix. input level (dBµV)
5
AN6096FHN
ICs for Mobile Communication
■ Application Notes (continued)
• Main characteristics (continued)
Note) Test conditions are the same as "■ Electrical Characteristics" unless otherwise specified.
The characteristic values below are theoretical values for designing and not guaranteed.
Proximity spurious suppression
RSSI characteristics
3.0
120
25°C, 80°C
2.8
−30°C
2.6
VCC = 3.0 V
Ta = −30°C, 25°C, 80°C
Lim. in: 400 kHz
Lim. out: 400 kHz
2.4
90
80
70
60
50
40
VCC = 3.0 V
Ta = −30°C, 25°C, 80°C
Lim. in: 400 kHz
Lim. out: 400 kHz
30
20
2.2
RSSI output voltage (V)
Lim. amp. output level (dBµV)
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
0.2
0
0.0
0
20
40
60
80
100
−30°C
0
120
25°C, 80°C
Q
330 pF
I
0.1 µF
I
330 pF
IO
IO
2.0 kΩ
100 nF
a
SW1
b
100 pF
21
IO
RSSI
23
1 000 pF
11
10
22
9
8
47 Ω
100 pF
VMI
1 000 pF
Lo3
IO
100 pF
Lo2
7
6
33 nF
1 000 pF
100 pF
1 000 pF
VLM
LIMOUT
5
4
47 Ω
3
47 Ω
2
1
10 pF
Lo1
Matsushita Electronic Components
EHF FD1623
6
120
12
24
VAPC/BS
100
VLI
400 kHz filter
2 200 pF
1.0 kΩ
80
47 Ω
14 15 nF
100 nF MIXOUT
VMX
15
16
18
19
1 000 pF
PO TXOUT
1 000 pF
17 100 pF
3.3 µF VCC1
20
60
Lim. amp. input level (dBµV)
■ Application Circuit Example
Q
0.1 µF
40
20
Lim. amp. input level (dBµV)
13 15 nF
110
VS
RSSIOUT
4.7µF
VCC2