AM0912-150 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .. .. .. .. REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 150 W MIN. WITH 7.5 dB GAIN BANDWIDTH = 255MHz .400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM0912-150 BRANDING 0912-150 PIN CONNECTION DESCRIPTION The AM0912-150 is designed for specialized avionics applications including Mode-S, TCAS and JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles. The AM0912-150 is housed in the unique BIGPAC Hermetic Metal/Ceramic package with internal Input/Output matching structures. 1. Collector 2. Base 3. Emitter 4. Base ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol PDISS IC VCC TJ T STG Parameter Value Unit 300 W 16.5 A Collector-Supply Voltage* 35 V Junction Temperature (Pulsed RF Operation) 250 °C − 65 to +200 °C 0.57 °C/W Power Dissipation* (TC ≤ 100°C) Device Current* Storage Temperature THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* *Applies only to rated RF amplifier operation September 1992 1/6 AM0912-150 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Valu e Test Conditions Min. Typ. Max. Unit BVCBO IC = 60mA IE = 0mA 55 65 — V BVEBO IE = 10mA IC = 0mA 3.5 — — V BVCES IC = 100mA 55 — — V ICES VCE = 35V — — 25 mA hFE VCE = 5V 20 — — — IC = 5A DYNAMIC Symbol Min. Typ. Max. Unit POUT ηc f = 960 — 1215MHz PIN = 26.7W VCC = 35V 150 — — W f = 960 — 1215MHz PIN = 26.7W VCC = 35V 45 — — % GP f = 960 — 1215MHz PIN = 26.7W VCC = 35V 7.5 — — dB Note: 2/6 Value Test Conditions Pul se Format : 6.4 µ S on 6.6 µ S off; repeat for 3.3 ms, t hen off for 4. 5125 ms Duty Cycle: Burst 49.2% overall 20.8% AM0912-150 TYPICAL PERFORMANCE TYPICAL POWER INPUT, POWER OUTPUT & COLLECTOR EFFICIENCY vs FREQUENCY POWER OUTPUT & COLLECTOR EFFICIENCY vs POWER INPUT MAXIMUM THERMAL RESISTANCE vs PULSE WIDTH & DUTY CYCLE VCC = 28-35V PIN ≅ 26W TC < 45°C 3/6 AM0912-150 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE Z IN PIN = 26.7 W VCC = 35 V Z O* = 10 ohms L = 960 MHz ZIN (Ω) 2.1 + j 3.8 ZCL (Ω) 3.8 − j 3.6 • = 1000 MHz 1.5 + j 3.1 3.0 − j 2.4 M = 1050 MHz 1.2 + j 2.5 2.5 − j 2.0 • = 1150 MHz 1.5 + j 2.4 2.0 − j 2.0 H = 1215 MHz 1.7 + j 2.4 2.0 − j 2.5 FREQ. TYPICAL COLLECTOR LOAD IMPEDANCE Z CL PIN = 26.7 W VCC = 35 V ZO* = 10 ohms *Normalized Impedance 4/6 AM0912-150 TEST CIRCUIT Ref: Dwg. No. C127513 5/6 AM0912-150 PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6