MOTOROLA MHPM6B10A60D

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by MHPM6B10A60D/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Devices
Integrated Power Stage
for 230 VAC Motor Drives
10, 20 AMP, 600 V
HYBRID POWER MODULES
These modules integrate a 3–phase inverter in a single convenient package.
They are designed for 1.0 and 2.0 hp motor drive applications. The inverter
incorporates advanced insulated gate bipolar transistors (IGBT) matched with
free–wheeling diodes to give optimum performance. The top connector pins are
designed for easy interfacing to the user’s control board.
• Short Circuit Rated 10 µs @ 125°C
• Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)
• Compact Package Outline
• Access to Positive and Negative DC Bus
• UL
Recognized
PRELIMINARY
MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
IGBT Reverse Voltage
VCES
600
V
Gate-Emitter Voltage
VGES
± 20
V
Rating
Continuous IGBT Collector Current
10A60
20A60
ICmax
10
20
A
Peak Repetitive IGBT Collector Current (1)
10A60
20A60
IC(pk)
20
40
A
Continuous Diode Current
10A60
20A60
IFmax
10
20
A
Peak Repetitive Diode Current (1)
10A60
20A60
IF(pk)
20
40
A
IGBT Power Dissipation (TC = 25°C)
10A60
20A60
PD
52
78
W
Diode Power Dissipation (TC = 25°C)
10A60
20A60
PD
19
38
W
IGBT Power Dissipation (TC = 95°C)
10A60
20A60
PD
23
34
W
Diode Power Dissipation (TC = 95°C)
10A60
20A60
PD
8.3
17
W
Junction Temperature Range
TJ
– 40 to +150
°C
Short Circuit Duration (VCC = 300 V, TJ = 125°C)
tsc
10
msec
VISO
2500
V
Operating Case Temperature Range
TC
– 40 to +95
°C
Storage Temperature Range
Tstg
– 40 to +125
°C
—
12
in–lb
Isolation Voltage
Mounting Torque — Heat Sink Mounting Holes (#8 or M4 screws)
(1) 1.0 ms = 1.0% duty cycle
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
MOTOROLA
 Motorola, Inc. 1997
MHPM6B10A60D MHPM6B20A60D
1
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)
Characteristic
IGES
—
—
± 20
µA
Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V)
TJ = 125°C
ICES
—
6.0
2000
100
µA
VGE(th)
4.0
6.0
8.0
V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V)
V(BR)CES
600
—
—
V
Collector-Emitter Saturation Voltage (IC = ICmax, VGE = 15 V)
TJ = 125°C
VCE(SAT)
—
—
2.35
2.31
3.5
—
V
VF
—
—
1.23
1.12
2.0
—
V
—
—
2300
4400
—
—
—
—
75
135
—
—
—
—
—
180
47
20
—
—
—
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)
Diode Forward Voltage (IF = IFmax, VGE = 0 V)
TJ = 125°C
Input Capacitance (VCE = 10 V, VGE = 0 V, f = 1.0 Mhz)
10A60
20A60
Cies
Input Gate Charge (VCE = 300 V, IC = ICmax, VGE = 15 V)
10A60
20A60
QT
pF
nC
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25°C)
Recommended Gate Resistor
Turn–On
10A60
20A60
Turn–Off
RG(on)
RG(off)
Turn-On Delay Time
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
20A60
td(on)
Rise Time
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
20A60
tr
Turn–Off Delay Time
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
td(off)
Fall Time
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
tf
Turn-On Energy
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
20A60
E(on)
Turn-Off Energy
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
20A60
E(off)
Diode Reverse Recovery Time
(IF = IFmax, V = 300 V, RG as specified)
Peak Reverse Recovery Current
(IF = IFmax, V = 300 V, RG as specified)
Diode Stored Charge
(IF = IFmax, V = 300 V, RG as specified)
MHPM6B10A60D MHPM6B20A60D
2
ns
—
—
375
215
—
—
ns
—
—
160
125
—
—
—
219
—
ns
—
210
500
ns
mJ
—
—
0.85
1.6
1.0
2.0
mJ
—
—
0.13
0.3
1.0
2.0
—
150
—
—
—
6.8
12
—
—
—
—
560
1060
—
—
trr
ns
Irrm
10A60
20A60
A
Qrr
10A60
20A60
W
nC
MOTOROLA
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 125°C)
Characteristic
Symbol
Turn–On Delay Time
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
20A60
td(on)
Rise Time
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
20A60
tr
Turn–Off Delay Time
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
td(off)
Fall Time
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
tf
Turn–On Energy
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
20A60
E(on)
Turn–Off Energy
(VCE = 300 V, IC = ICmax, VGE = 15 V, RG as specified)
10A60
20A60
E(off)
Diode Reverse Recovery Time
(IF = IFmax, V = 300 V, RG as specified)
Peak Reverse Recovery Current
(IF = IFmax, V = 300 V, RG as specified)
Diode Stored Charge
(IF = IFmax, V = 300 V, RG as specified)
Min
Typ
Max
ns
—
—
335
200
—
—
ns
—
—
160
125
—
—
—
230
—
—
460
—
ns
ns
mJ
—
—
1.2
2.2
—
—
mJ
—
—
0.44
0.82
—
—
—
240
—
—
—
10
18
—
—
—
—
1330
2400
—
—
trr
ns
Irrm
10A60
20A60
A
Qrr
10A60
20A60
Unit
nC
THERMAL CHARACTERISTICS (Each Die)
Thermal Resistance — IGBT
10A60
20A60
RqJC
—
—
1.94
1.28
2.43
1.60
°C/W
Thermal Resistance — Free–Wheeling Diode
10A60
20A60
RqJC
—
—
5.28
2.61
6.60
3.26
°C/W
MOTOROLA
MHPM6B10A60D MHPM6B20A60D
3
TYPICAL CHARACTERISTICS
2.0
2.0
15 V
VGE = 18 V
15 V
VGE = 18 V
12 V
12 V
1.5
IC /I Cmax
IC /I Cmax
1.5
1.0
1.0
9.0 V
9.0 V
0.5
0.5
0
0
1.0
0
2.0
3.0
4.0
5.0
6.0
1.0
0
4.0
5.0
6.0
VCE (V)
Figure 1. Normalized IC versus VCE, TJ = 25°C
Figure 2. Normalized IC versus VCE, TJ = 125°C
800
toff @ 125°C
700
2.0
600
t d(off) , t f , t off (ns)
IF/I Fmax
3.0
VCE (V)
2.5
1.5
1.0
IF (NORMALIZED), 125°C
tf @ 125°C
500
toff
400
td @ 125°C
300
td
200
0.5
tf
100
IF (NORMALIZED)
0
0
0
0.2
0.4
0.6
0.8
1.2
1.0
1.4
1.6
0
0.2
0.4
0.6
0.8
1.0
VF (V)
IC/ICmax
Figure 3. IF versus VF
Figure 4. td(off), tf, toff versus Normalized IC
1.2
10
t d(on), t r , t on (ALL NORMALIZED ON t r )
1400
1200
1000
t d , t f , t off (ns)
2.0
toff @ 125°C
800
tf @ 125°C
600
toff
400
tf
td @ 125°C
200
td
0
0
ton @ 125°C
td(on)
1.0
ton
td(on) @ 125°C
tr
tr @ 125°C
0.1
20
40
60
80
100
120
0
0.2
0.4
0.6
0.8
1.0
RG (W)
IC/ICmax
Figure 5. td(off), tf, toff, versus RG
Figure 6. td(on), tr, ton versus IC
MHPM6B10A60D MHPM6B20A60D
4
MOTOROLA
1.2
TYPICAL CHARACTERISTICS
2.5
ton
td(on)
tr
E on , E off (mJ)
t d(on), t r , t on (ALL NORMALIZED ON t r )
10
1.0
Eon @ 125°C
1.5
Eon
1.0
Eoff @ 125°C
0.5
@ 125°C
0
Eoff
0
0.5
0
1.0
1.5
2.0
2.5
3.0
0
5.0
15
20
IC, (A)
Figure 7. td(on), tr, ton versus Normalized RG
Figure 8. Eon, Eoff versus IC
25
E on (NORMALIZED FOR E on WITH
RECOMMENDED R G(on))
2.0
Eoff, 125°C
0.04
0.03
0.02
Eoff
0.01
Eon, 125°C
1.5
Eon
1.0
0.5
0
0
20
0
40
60
80
100
0
120
0.5
RG (W)
trr
1.0
@ 125°C
0.1
MOTOROLA
0.4
0.6
2.0
2.5
1000
Irr
0.2
1.5
Figure 10. Normalized Eon versus Normalized
RG(on)
CAPACITANCE, NORMALIZED TO I Cmax (pF/A)
10
0
1.0
RG/RG (RECOMMENDED)
Figure 9. Eoff versus RG(off) at Rated IC
t rr , (NORMALIZED TO 1), I rr , (NORMALIZED TO 10)
10
RG/RG (RECOMMENDED)
0.05
Eoff (mJ/A)
2.0
0.8
1.0
1.2
Cies
100
Cres
10
1.0
Coes
0.1
0
20
40
60
80
IF/IFmax
VCE (V)
Figure 11. trr, Irr versus IF
Figure 12. Capacitance Variation
MHPM6B10A60D MHPM6B20A60D
5
100
TYPICAL CHARACTERISTICS
15
100
VCC = 300
20A60
10A60
10A60
20A60
10
IC (A)
VGE (V)
10
+VGE = 15 V
–VGE = 0 V
RG AS SPECIFIED RG(on)
TJ = 25°C
1.0
5.0
0
0
0
20
40
60
80
100
120
0
140
100
200
300
400
500
600
700
QG (nC)
VCE (V)
Figure 13. VGE versus QG
Figure 14. Reverse Biased Safe operating Area
1.0
NORMALIZED r(t)
0.8
20A60 DIODE
0.6
10A60 DIODE
0.4
10A60 IGBT
0.2
20A60 IGBT
0
0.01
0.1
1.0
10
100
1,000
10,000
TIME (ms)
Figure 15. Normalized Transient Thermal Resistance
+15 V
ton
RG(on)
toff
td(on)
tr
td(off)
tf
90%
90%
OUTPUT, Vout
INVERTED
MC33153
RG(off)
10%
90%
INPUT, Vin
50%
50%
10%
PULSE WIDTH
Figure 16. Switching Waveforms
MHPM6B10A60D MHPM6B20A60D
6
Figure 17. Typical Gate Drive Circuit
MOTOROLA
APPLICATION INFORMATION
These modules are designed to be used as the power
stage of a three–phase AC induction motor drive. They may
be used for up to 230 VAC applications. Switching frequencies up to 10 kHz have been considered in the design.
Gate resistance recommendations have been listed.
Separate turn–on and turn–off resistors are listed, to be used
in a circuit resembling Figure 17. All switching characteristics
are given based on following these recommendations, but
appropriate graphs are shown for operation with different
gate resistance. In order to equalize across the two different
module ratings, a normalization process was used. Actual
typical values are listed in the second section of this
specification sheet, “Electrical Specifications,” but many of
the graphs are given in normalized units.
The first three graphs, the DC characteristics, are normalized for current. The devices are designed to operate the
same at rated maximum current (10 and 20 A). The curves
extend to I Cpk , the maximum allowable instantaneous
current.
The next graph, turn–off times versus current, is again
normalized to the rated maximum current. The following
graph, turn–off times versus RG(off), is intentionally not
normalized, as both modules behave similarly during turn–
off.
Turn–on times have been normalized. Again, the graph
showing variation due to current has been normalized for
rated maximum current. The graph showing variation due to
gate resistance normalizes against the recommended RG(on)
for each module. In addition, the times are normalized to tr at
the appropriate temperature. For example, td(on) for a 10 A
module operating at 125°C at 4.0 A can be found by
multiplying the typical tr for a 10 A module at 125°C (160 ns)
by the value shown on the graph at a normalized current of
0.4 (1.6) to get 256 ns. The most salient features demonstrated by these graphs are the general trends: rise time is a
1
2
3
Q1
Q2
16
15
4
larger fraction of total turn–on time at 125°C, and in general,
larger gate resistance results in slower switching.
Graphs of switching energies follow a similar structure.
The first of these graphs, showing variation due to current, is
not normalized, as any of these devices operating within its
limits follows the same trend. Eoff does not need to be
normalized to show variation with R G(off) , as both are
specified with the same nominal resistance. Eon, however,
has been appropriately normalized. Gate resistance has
been normalized to the specified RG(on). In order to show the
effect of elevated temperature, all energies were normalized
to Eon at 25°C using the recommended RG(on).
Reverse recovery characteristics are also normalized. IF is
normalized to rated maximum current. Irrm is normalized so
that at maximum current at either 25°C or 125°C, the graph
indicates “10”, while trr is normalized to be “1” at maximum
current at either temperature.
Capacitance values are normalized for ICmax. Due to poor
scaling, gate charge and thermal characteristics are shown
separately for each module.
Many issues must be considered when doing PCB layout.
Figure 19 shows the footprint of a module, allowing for
reasonable tolerances. A polarizing post is provided near pin
1 to ensure that the module is properly inserted during final
assembly. When laying out traces, two issues are of primary
importance: current carrying capacity and voltage clearance.
Many techniques may be used to maximize both, including
using traces on both sides of the PCB to double total copper
thickness, providing cut–outs in high–current traces near
high–voltage pins, and even removing portions of the board
to increase “over–the–surface” creapage distance. Some
additional advantage may be gained by potting the entire
board assembly in a good dielectric. Consult appropriate
regulatory standards, such as UL 840, for more details on
high–voltage creapage and clearance.
5
Q3
D1
Q4
D2
14
6
13
12
7
Q5
D3
D5
Q6
D4
11
8
10
D6
9
Figure 18. Schematic of Internal Circuit, Showing Package Pin–Out
MOTOROLA
MHPM6B10A60D MHPM6B20A60D
7
RECOMMENDED PCB LAYOUT
VIEW OF BOARD FROM HEAT SINK
(All Dimensions Typical)
NON–PLATED THRU–HOLE
0.140
0.265
0.175
KEEP–OUT ZONES (x4)
0.270
0.250
0.625
0.270
PIN 1
PLATED THRU–HOLES
(x16)
0.065
0.250
3.500
PACKAGE “SHADOW”
0.450
0.625
0.175
0.175
1.350
1.530
OPTIONAL NON–PLATED
THRU–HOLES FOR ACCESS
TO HEAT SINK MOUNTING
SCREWS (x2)
Figure 19. Package Footprint
NOTES:
1.
Package is symmetrical, except for a polarizing plastic post near pin 1, indicated by a non–plated thru–hole in the footprint.
2.
Dimension of plated thru–holes indicates finished hole size after plating.
3.
Access holes for mounting screws may or may not be necessary depending on assembly plan for finished product.
MHPM6B10A60D MHPM6B20A60D
8
MOTOROLA
PACKAGE DIMENSIONS
3.500
3.000
1
0.154
2
3
4
5
6
7
8
1.000
0.115
1.530
1.350
16
15
14
13
12
11
10
9
0.250
0.050
0.475
0.150
0.650
0.350
PRELIMINARY
MOTOROLA
MHPM6B10A60D MHPM6B20A60D
9
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
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◊
MHPM6B10A60D MHPM6B20A60D
10
MHPM6B10A60D/D
MOTOROLA