SM-8 DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS ZDT1147 ISSUE 1 - AUGUST 1997 C1 B1 C1 E1 C2 B2 C2 E2 SM-8 (8 LEAD SOT223) PARTMARKING DETAIL – ZDT1147 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -15 V Collector-Emitter Voltage V CEO -12 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -20 A Continuous Collector Current IC -5 A Base Current IB -500 mA Operating and Storage Temperature Range T j:T stg -55 to +150 °C THERMAL CHARACTERISTICS PARAMETER SYMBOL Total Power Dissipation at T amb = 25°C* Any single die “on” Both die “on” equally P tot Derate above 25°C* Any single die “on” Both die “on” equally Thermal Resistance - Junction to Ambient* Any single die “on” Both die “on” equally VALUE UNIT 2.0 2.75 W W 18 22 mW/ °C mW/ °C 55.6 45.5 °C/ W °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. ZDT1147 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown V(BR)CBO Voltage -15 Collector-Emitter Breakdown Voltage VCES Collector-Emitter Breakdown Voltage UNIT CONDITIONS. -35 V IC=-100µA -12 -25 V IC=-100µA VCEO -12 -25 V IC=-10mA Collector-Emitter Breakdown Voltage VCEV -12 -25 V IC=-100µA, VEB=+1V Emitter-Base Breakdown Voltage V(BR)EBO -5 -8.5 V IE=-100µA Collector Cutoff Current ICBO -0.3 -100 nA VCB=-12V Emitter Cutoff Current IEBO -0.3 -100 nA VEB=-4V Collector Emitter Cutoff Current ICES -0.3 -100 nA VCES=-10V Collector-Emitter Saturation Voltage VCE(sat) -25 -70 -90 -115 -250 -50 -110 -130 -170 -380 mV mV mV mV mV IC=-0.1A, IB=-1mA* IC=-0.5A, IB=-2.5mA* IC=-1A, IB=-6mA* IC=-2A, IB=-20mA* IC=-5A, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -950 -1050 mV IC=-5A, IB=-50mA* Base-Emitter Turn-On Voltage VBE(on) -905 -1000 mV IC=-5A, VCE=-2V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 115 MHz IC=-50mA, VCE=-10V f=50MHz Output Capacitance CCB 80 pF VCB=-10V, f=1MHz ton 150 ns IC=-4A, IB=-40mA, VCC=-10V toff 220 ns IC=-4A, IB=±40mA, VCC=-10V 270 250 200 150 90 450 400 340 250 160 60 MAX. IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-2A, VCE=-2V* IC=-5A, VCE=-2V* IC=-10A, VCE=-2V* IC=-20A, VCE=-2V* 850 Switching Times *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ZDT1147 TYPICAL CHARACTERISTICS 1.0 1.0 IC/IB=100 +25°C 0.8 VCE(sat) - (V) VCE(sat) - (V) 0.8 IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200 0.6 0.4 0.6 -55°C +25°C +100°C 0.4 0.2 0.2 0 0 1m 10m IC - 100m 1 10 1m 100 10m Collector Current (A) VCE(sat) v IC 1 10 100 VCE(sat) v IC 750 1.6 IC/IB=100 VCE=2V 1.2 500 VBE(sat) - (V) hFE - Typical Gain 100m IC - Collector Current (A) +100°C +25°C -55°C 250 0.8 0.4 0 -55°C +25°C +100°C 0 1m 10m 100m 1 10 100 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) hFE v IC VBE(sat) v IC 1.4 100 100 IC - Collector Current (A) VCE=2V 1.2 VBE(on) - (V) 1.0 0.8 0.6 0.4 -55°C +25°C +100°C 0.2 0 1m 10m 100m 1 10 100 10 1 100m 100m DC 1s 100ms 10ms 1ms 100us 1 10 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 100